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- 저자 : Adem Kocyigit (검색결과 2 건)
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The structural analysis of MWCNT-SiO2 and electrical properties on device application
Adem Kocyigit,Ikram Orak,Ibrahim Karteri,Serhan Urus 한국물리학회 2017 Current Applied Physics Vol.17 No.9
Al/MWCNT-SiO2/p-Si device were obtained using chemical techniques and characterized using the I-V (under dark and light conditions) and C-V measurements depending on various frequency. MWCNT-SiO2 composite layer of the device were also characterized using XRD, FTIR, SEM, TEM and TGA measurements. These all results indicated that the MWCNT-SiO2 layer synthesized successfully on Si wafer as a composite form with chemical processes and spin coating. I-V measurements showed that device has good rectifying properties, small saturation current and good photodiode properties. Solar cell conversion efficiency (hp) and fill factor (FF) values of the device also were calculated as 0.12% and 47.6%, respectively. It could be seen from C-V measurements that capacitance and conductance properties of the device strongly depended on frequency and voltage. It may be used and improved this device as rectifier, photodiode and capacitor in the future.
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Cu and Mn centered nicotinamide/nicotinic acid complexes for interlayer of Schottky photodiode
Kocyigit Adem,Yıldız Dilber Esra,Hussaini Ali Akbar,Kose Dursun Ali,Yıldırım Murat 한국물리학회 2023 Current Applied Physics Vol.45 No.-
Schottky type photodiodes have gained great interest due to their fast response to light. Various materials have been used to improve their efficiency behaviors as interlayers or electrodes. In this study, we synthesized Cu- and Mn-centered nicotinamide/nicotinic acid complexes and used them for Schottky type photodiode as interfacial layer. Thus, Al/Cu-complex/p-Si and Al/Mn-complex/p-Si metal semiconductor heterojunctions were fabricated by Al metal and p-Si semiconductor. The I–V and I-t analyses were employed to identify the fabricated devices under various light power intensities. The devices were evaluated according to various diode parameters such as series resistance, ideality factor and barrier height values obtained by I–V characteristics data from thermionic emission theory, Cheung and Norde techniques. Furthermore, various parameters of photodetection such as specific detectivity, photosensitivity and responsivity were calculated from the I-t measurements. The results reveal that heterojunctions can be employed for photodiode applications.
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