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RISS 인기검색어
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- 저자 : Dao Nguyen Hoai Nam, (검색결과 2 건)
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Le Viet Bau,Nguyen Van Khiem,Dao Nguyen Hoai Nam,,Nguyen Xuan Phuc 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.52 No.5
The La0.7Sr0.3Mn₁-xTixO₃ (x = 0 ~ 0.3) compounds were studied by using magnetic and transport measurements. The substitution of Ti⁴+ for Mn⁴+ reduces the transition temperature Tc and the saturation magnetization (Ms). By analyzing the M(H) curves in high-field regions, a coexistence of two separate phases (a ferromagnetic and a non-ferromagnetic one) is revealed in all the compounds. Moreover, a conversion between the two phases with temperature was observed; the volume fraction of the ferromagnetic phase decreases while that of non-ferromagnetic phase increases with increasing temperature. The results also suggest that the non-ferromagnetic phase develops with increasing Ti content. The La0.7Sr0.3Mn₁-xTixO₃ (x = 0 ~ 0.3) compounds were studied by using magnetic and transport measurements. The substitution of Ti⁴+ for Mn⁴+ reduces the transition temperature Tc and the saturation magnetization (Ms). By analyzing the M(H) curves in high-field regions, a coexistence of two separate phases (a ferromagnetic and a non-ferromagnetic one) is revealed in all the compounds. Moreover, a conversion between the two phases with temperature was observed; the volume fraction of the ferromagnetic phase decreases while that of non-ferromagnetic phase increases with increasing temperature. The results also suggest that the non-ferromagnetic phase develops with increasing Ti content.
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Switching and Electrical Memory Effect in the Colossal Permittivity Material La2NiO4+δ
Le Van Hong,Tran Dang Thanh,Dao Nguyen Hoai Nam,,Nguyen Xuan Phuc 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
La2NiO4+δ ceramic samples were manufactured by using a solid state reaction method. The crystalline structural, magnetic and dielectric properties of the material were recorded and analyzed. A dielectric resonance, which is thought to be associated with the multiferroic behavior of the material, was observed at frequencies below 1 MHz. The I/V characteristics were easured on a capacitor-like structure, which exhibited resistance and capacitance switching when opposite voltage pulses of about 2.5 volts with a duration time of 500 ms were applied. The maximum ratios of the changes in the resistance and the capacitance were estimated to be of about 50 % and 35 % at room temperature, respectively. The electrical switching was reversible, with resistive states remaining for a rather long time. The observed capacitance switching and memory effects provide evidence for the presence of charge transfer and accumulation in the material.
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