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Jer-Chyi Wang,Chin-Hsiang Liao,Chih-Ting Lin,Ruey-Dar Chang,Li-Chun Chang,Chih-I Wu,Jung-Hung Chang 한국물리학회 2015 Current Applied Physics Vol.15 No.4
Carrier injection and charge loss characteristics of nonvolatile memories with chemically-synthesized (CS) and vacuum-deposited (VD) gold nanoparticles (Au-NPs) have been investigated. Compared to CS counterparts, the memories with VD Au-NPs exhibit a higher dot density of 3.77 × 1011 cm-2, leading to a larger memory window. Further, the energy from valence-band edge to vacuum level (EVB_vac) of tunneling oxide for the samples with CS and VD Au-NPs is found to be 9.04 and 9.85 eV respectively. The small EVB_vac value of the memories with CS Au-NPs is resulted from the formation of a thin chemical oxide (SiOx) on thermally-grown SiO2 tunneling layer during the chemically synthesized process, contributing to a slow erasing behavior. Besides, the programming of the memories with VD Au-NPs is saturated at high gate bias, which has been well-explained by the electrons induced potential coupling between Au-NPs. Superior data retention property and high temperature dependence of charge loss are observed for the memories with CS Au-NPs, which can be ascribed to the thick tunneling oxide layer by the additional SiOx film.
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Jer-Chyi Wang,Kai-Ping Chang,Chin-Hsiang Liao,Ruey-Dar Chang,Chao-Sung Lai,Li-Chun Chang 한국물리학회 2016 Current Applied Physics Vol.16 No.5
Characteristics of chemically-synthesized (CS) gold nanoparticle (Au-NP) nonvolatile memories (NVMs) with low-damage NH3 plasma treatment on a tunneling oxide (TO) layer have been investigated. Although the dot density of CS Au-NPs is decreased, the programming efficiency of memories with optimized NH3 plasma treatment condition is enhanced due to the formation of a trapezoid-like energy band diagram of the TO layer by nitrogen incorporation. With the extraction of relative permittivity and electron affinity of the TO layer, the capacitance-voltage (C-V) and programming behaviors of CS Au-NP memories with low-damage NH3 plasma treatment on the TO layer are well-fitted by the TCAD (Technology Computer-Aided-Design) simulation. Further, the built-in electric field induced by the trapezoidlike energy band diagram of the TO layer can suppress the leakage current of the TO layer, thereby improving the data retention properties. The low-damage NH3 plasma treatment that results in no plasma damage to the TO layer has been proposed to be the probable candidate for future NVM applications.
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