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Growth of GaInP Layers on Ge Vicinal Substrates for Multi-junction Solar Cells
윤의준,Changjae Yang,Keun Wook Shin,Jungsub Kim,Jaeyel Lee,Chang-Zoo Kim,Ho Kwan Kang,Won-Kyu Park 한국물리학회 2010 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.56 No.4
In this research, we studied the growth of GaInP layers on Ge substrates for applications to multijunction solar cells. GaInP layers were grown on p-Ge(100) substrates with 6。 off toward <111> by using low pressure metal-organic chemical vapor deposition (MOCVD). The growth temperature,mass flow ratio of group III materials and V/III ratio were varied in order to grow high-quality GaInP epitaxial layers. A GaInP layer with a 1.6-nm root-mean-square roughness was obtained at a 55% In content. The doping profile in the GaInP and the Ge was characterized by using electrochemical capacitance voltage (ECV) measurements. The junction depth in the Ge substrate due to the diffusion of group V atoms from the GaInP layer was observed to be about 170 nm and did not increased significantly during the subsequent 1000-sec annealing.
Cho, Seongjae,Park, Byung-Gook,Yang, Changjae,Cheung, Stanley,Yoon, Euijoon,Kamins, Theodore I,Yoo, S J Ben,Harris, James S Optical Society of America 2012 Optics express Vol.20 No.14
<P>Group-IV materials for monolithic integration with silicon optoelectronic systems are being extensively studied. As a part of efforts, light emission from germanium has been pursued with the objective of evolving germanium into an efficient light source for optical communication systems. In this study, we demonstrate room-temperature electroluminescence from germanium in an Al0.3Ga0.7As/Ge heterojunction light-emitting diode without any complicated manipulation for alternating material properties of germanium. Electroluminescence peaks were observed near 1550 nm and the energy around this wavelength corresponds to that emitted from direct recombination at the Gamma-valley of germanium. (c) 2012 Optical Society of America</P>