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RISS 인기검색어
- 검색키워드
- 저자 : Ankun Huang (검색결과 2 건)
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An Adaptive Cellular Genetic Algorithm Based on Selection Strategy for Test Sheet Generation
Ankun Huang,Dongmei Li,Jiajia Hou,Tao Bi 보안공학연구지원센터 2015 International Journal of Hybrid Information Techno Vol.8 No.9
Intelligent test sheet generation is a multi-objective constrained optimization problem. Genetic algorithm based on groups search strategy can provide a better solution for multi-objective optimization. Traditional genetic algorithm in test sheet generation process has many drawbacks, such as poor convergence, low fitness and high exposure times. To solve these problems, this paper proposes an adaptive cellular genetic algorithm based on selection strategy. Selection strategy can adaptively determine candidate test items set and the conceptual granularities according to the desired concept scope. Then, a new cellular population is formed by candidate test items. After evolution by the rule, genetic algorithms are executed. The experimental results show that the proposed algorithm gets rid of tests that do not meet the requirements which can reduce knowledge related errors, lower the exposure of tests, and increase the possibility of escape from local optima. In general, the algorithm proposed in this paper effectively improves the convergence speed as well as generates test papers more in line with people's demands.
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A larger nonvolatile bipolar resistive switching memory behaviour fabricated using eggshells
Guangdong Zhou,Bai Sun,Ankun Zhou,Bo Wu,Haishen Huang 한국물리학회 2017 Current Applied Physics Vol.17 No.2
Resistive random access memory (RRAM) devices have emerged as promising candidates for near future nonvolatile information storage. Eggshells, a food waste, have not been focused and recycled sustainably today. Eggshell-based devices have shown a large resistive-switching(RS) memory behaviors with favorable resistance ratio of ~103, larger memory window of ~3.5 V, and high endurance and retention performance. Redox-based Ag filament models involving the formation and rupture of the metallic conduction filaments between top and bottom electrodes are proposed to interpret the large nonvolatile bipolar RS memory behaviors. This discovery provides for the possibility of an environmentally friendly, low-cost and sustainable material application in the next-generation nonvolatile date storage device
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