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      저자 : Alain Chovet (검색결과 2 건)
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        Simple Model for 1/f Noise in Polycrystalline Silicon Thin-Film Transistors

        정일 이,Alain Chovet,Hwe-Jong Kim,한일기,Jean Brini,최원준,조운조,Young-Ju Park 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.III

        We present a simple and novel model for low-frequency excess noise in polycrystalline silicon thin-film transistors. In the model, the grain boundary is considered as a symmetric Schottky barrier and the noise generation mechanisms for both mobility fluctuation and number fluctuation in a Schottky barrier are taken into account. Analysis of the experimental results shows that carrier number fluctuation by barrier height modulation involving thermal activation at bulk trap states in the depletion layer of the grain boundary is found to be responsible for 1/f noise at lower currents. Mobility fluctuation prevails at higher current, due to the increased Hooge parameter and the lack of noise sources for carrier number fluctuation.

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        Characteristics of 1/f Noise in Au/GaAs Schottky Diode Embedded with Self-Assembled InAs Quantum Dots

        송진동,J. I. Lee,Alain Chovet,한일기,J. H. Kim,송종인,최원준 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.3

        The In uence of quantum-dot growth on the electrical properties of Au/GaAs Schottky diode structures containing self-assembled InAs quantum dots fabricated via atomic-layer molecular beam epitaxy is investigated. Current-voltage characteristics and low-frequency noise measurements were performed and analyzed. Employing four dierent structures: containing a single quantum-dot layer, without quantum-dot layer for reference, thicker capping layer with a single quantum-dot layer, and three quantum-dot layers, we nd that the diode containing a single quantum-dot layer shows the largest leakage current and all the dots show 1/f behavior in low frequency noise characteristics. Current dependence of the noise current power spectral density shows that all the dots have linear current dependence at low bias, which is explained by the mobility and diusivity uctuation. The Hooge parameter was determined to be in the range of 10က7 to 10က8. At high bias, the diodes containing quantum dot layer(s) show I F dependence with a value of larger than 2 (3.9, and 2.7), and the diode without quantum-dot layer and thicker capping layer shows a value of smaller than 2 (1.6). The deviation of the values of from two is explained by the random walk of electrons involving interface states at the metal-semiconductor Schottky barrier interface via barrier height modulation. It seems that the growth of quantum dots induces generation of the interface states, with density increasing towards the conduction-band edge. The value of smaller than 2 means that the interface-state density increases towards the midgap. A typical value of the interface-state density was found to be on the order of 1011 to 1012 cm2/Vs.

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