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Buffer 층을 갖는 CoFe / Cu / Co 샌드위치 박막의 자기저항 특성
송은영(E. Y. Shong),오미영(M. Y. Oh),김경민(K. M. Kim),이장로(J. R. Rhee),김미양(M. Y. Kim),김희중(H. J. Kim),박창만(C. M. Park),이상석(S. S. Lee),황도근(D. G. Hwang) 한국자기학회 1997 韓國磁氣學會誌 Vol.7 No.3
Buffer(t Å)/CoFe(35Å)/Cu(50Å)/Co(35Å) sandwiches prepared by dc magnetron sputtering on Corning glass substrates using the Co_(90)Fe_(10) and Co layers with different coercivities. Dependence of magnetoresistance on the type and thickness of buffer layers, and on the thickness of Cu and the magnetic layers in buffer /CoFe/Cu/Co sandwiches were investigated. Magnetoresistance ratio and saturation field Hs increased as thickness of the buffer layer becomes thicker, then decreased smoothly after a maximum value. An improved field sensitivity was realized with the Ni_(81)Fe_(19) buffer layer.
Buffer / [CaFe / CU]N 다층박막의 자기저항 특성
송은영(E. Y. Shong),오미영(M. Y. Oh),이현주(H. J. Lee),김경민(K M. Kim),김미양(M. Y. Kim),이장로(J. R. Rhee),김희중(H. J. Kim) 한국자기학회 1998 韓國磁氣學會誌 Vol.8 No.4
Dependence of magnetoresistance on the thickness of Cu, the type and thickness of buffer layer, Ar pressure, the stacking number of multilayer and annealing condition in the buffer / [CaFe / CU]_N multilayer, prepared by dc magnetron sputtering on Coming glass, were investigated. The magnetoresistance oscillate in magnitude with the thickness of the Cu spacing layer. We found that the thickness of suitable buffer layer is approximately 60 Å. The magnetoresistance ratio exhibits a maximum of 14% for the multilayer with stacking number of 15 prepared in Ar pressure of 5 mTorr. Magnetoresistance ratio of the multilayer annealed below 250 ℃ was increased due to the larger textured grain with periodicity, but reduced at the temperature higher than 250 ℃ because of the interfacial mixing and diffusion. We found that thermal stability of the sample with Cr buffer layer is higher than that of the sample with Fe buffer layer.
다층박막 Fe(50 Å) / [Co(17 Å) / Cu(24 Å)]20의 증착률 및 열처리가 자기저항에 미치는 효과
김미양(M. Y. Kim),최수정(S. J. Choi),최규리(K. L. Choi),송은영(E. Y. Shong),오미영(M. Y. Oh),이장로(J. R. Rhee),이상석(S. S. Lee),황도근(D. G. Hwang),박창만(C. M. Park),이기암(K. A. Lee) 한국자기학회 1998 韓國磁氣學會誌 Vol.8 No.5
Dependence of magnetoresistance on base pressure and deposition rates of each Fe, Co, Cu layers in the Fe(50 Å)/[Co(17 Å)/Cu(24 Å)_(20) multilayer thin films, prepared by dc magnetron sputtering on Corning glass, were investigated. AFM analysis, X-ray diffraction analysis, vibrating sample magnetometer analysis, and magnetoresistance measurement (4-probe method) were performed. The multilayer films deposited under low base pressure increases magnetoresistance ratio by preventing oxidation. Annealing for the samples at a moderate temperature allowed larger textured grain with no loss in the periodicity. Magnetoresistance ratio of the annealed multilayers was increased due to the increase antiferromagnetically coupled fraction of the film after annealing. Optimization of deposition rate was greater than 1 Å/s for Fe, and 2.8 Å/s for Cu. Deposition rate of Co showed a tendency of increasing of magnetoresistance ratio due to the formation of flat magnetic layer in case of high deposition rate of Co.