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현도빈,황종승,오태성,유병철,황창원,Hyeon, Do-Bin,Hwang, Jong-Seung,O, Tae-Seong,Yu, Byeong-Cheol,Hwang, Chang-Won 한국재료학회 1998 한국재료학회지 Vol.8 No.5
Electrical and Thermoelectric Properties of$ SbI_{3}$-doped 85% 85% $BiTe_{2}$$Se_{3}$ 단결정에서 전하 이동에 대한 살란인자는 0.1이었으며, 전자이동도와 정공이동도의 비($\mu_{e}$ /$\mu_{h}$ )는 1.45이었다. $SbI_{3}$의 첨가량이 증가할수록 전자 농도의 증가로 Seebek 계수와 전기비저항이 감소하며, Seebeck 계수와 전기비저항이 최대값을 나타내는 온도가 고온으로 이동하였다. $SbI_{3}$를 첨가한 85%$Bi_{2}$$Te_{3}$단결정에서 성능지수의 최대값은 $SbI_{3}$를 0.1 wt%첨가한 조성에서 $2.0 x 10^{-3}$ K이었다.
Band-Gap Energy and Thermoelectric Properties of 90% $Bi_2Te_3-10% Bi_2Se_3$ Single Crystals
하헌필,현도빈,황종승,오태성,Ha, Heon-Pil,Hyeon, Do-Bin,Hwang, Jong-Seung,O, Tae-Seong Materials Research Society of Korea 1999 한국재료학회지 Vol.9 No.4
Dopant를 첨가하지 않은 시료와 donor dopant로 $CdI_2$를 첨가한 $Bi_2Te_3-10%$ 단결정을 Bridgman법으로 성장시키고 Hall 계수, 전하이동도, 전기비저향, Seebeck 계수, 열전도도 빛 성능지수를 77~600K의 온도범위에서 측정하였다. Dopant를 첨가하지 않은 90% $Bi_2Te_3-10% Bi_2Se_3$ 단결정에서 포화정공농도는 $5.85\times10_{18}cm^{-3}$ 이고 degenerate 온도는 127K 이었£며, 전하 이동에 대한 산란인자는 -0.23 이고 전자이동도와 정꽁이동도의 비 ($\mu_e/\mu_h)$는 1.45 이었다. 90% $Bi_2Te_3-10% Bi_2Te_3$ 단결정의 OK 에서의 밴드갭 에너지는 0.200 eV 로서 $Bi_2Te_3-Bi_2Se_3$계 단결정에서눈 $Bi_2Se_3$의 놓도가 증가할수록 밴 드갭 에너지가 증가하였다. Donor dopant로 $CdI_2$를 첨가한 90% $Bi_2Te_3-Bi_2Se_3$ 조성의 n형 단결정에서 성능지수의 최대값은 $CdI_2$를 0.05 wt% 첨가한 경우에 약 230K에서 $3.2\times10^{-3}/K$를 나타내었다. The temperature dependences of the Hall coefficient, carrier mobility, electrical resistivity, Seebeck coefficient, thermal conductivity, and figure-of-merit of the undoped and $CdI_2$-doped 90% $Bi_2Te_3-10% Bi_2Se_3$, single crystals, grown by the Bridgman method, have been characterized at temperatures ranging from 77K to 600K. The saturated carrier concentration and degenerate temperature of the undoped 90% $Bi_2Te_3-10% Bi_2Se_3$ single crystal are $5.85\times10_{18}cm^{-3}$ and 127K, respectively. The scattering parameter of the 90% $Bi_2Te_3-10% Bi_2Se_3$ single crystal is determined to b -0.23, and the electron mobility to hole mobility ratio ($\mu_e/\mu_h)$ is 1.45. The bandgap energy at 0K of the 90% <$Bi_2Te_3-10% Bi_2Se_3$ single crystal is 0.200 eV. Adding $CdI_2$as a donor dopant, a maximum figure-of-merit of $3.2\times10^{-3}/K$</TEX at 230K was obtained for 0.05wt% $CdI_2$-doped specimen.
2 wt % Te 를 과잉으로 첨가한 25 % Bi2Te3-75 % Sb2Te3 단결정에서 Sb2Se3 의 첨가가 전기적특성과 열전특성에 미치는 영향
현도빈,오태성,하헌필,황종승 대한금속재료학회(대한금속학회) 2000 대한금속·재료학회지 Vol.38 No.1
Electrical and thermoelectric properties of the 2 wt% excess Te-doped (25% Bi₂Te₃-75% Sb₂Te₃)_(1-X) (Sb₂Se₃)_X single crystals have been investigated at temperatures ranging from 77K to 600K. With increasing the Sb₂Se₃ content, the Hall mobility decreased and electrical resistivity increased, which was attributed to the lattice distortion. The thermal conductivity decreased with increasing Sb₂Se₃ content mainly due to the decrease of the electronic thermal conductivity. However, the (κ-κ_(el)) value was not changed with the addition of Sb₂Se₃, and the most plausible explanation for such phenomena appeared to be the existence of the photon thermal conductivity in addition to the electronic and phonon thermal conductivity. The 2 wt% excess Te-doped (25% Bi₂Te₃-75% Sb₂Te₃)_(0.913)(Sb₂Se₃)_(0.087) single crystal exhibited the maximum figure-of-merit of 2.45×10^(-3)/K at 310K.
과잉 Te 첨가와 성장속도가 22.5% Bi2Te3-77% Sb2Te3 단결정성의 열전특성에 미치는 영향
현도빈,오태성,하헌필,황종승 대한금속재료학회(대한금속학회) 2000 대한금속·재료학회지 Vol.38 No.1
The thermoelectric properties of the p-type 22.5% Bi₂Te₃-77.5% Sb₂Te₃ single crystals, grown by the zone melting method, have been studied with changing the amount of excess Te up to 6 wt% and the growth rate from 0.1 to 0.5 ㎜/min. The Seebeck coefficient and electrical resistivity along the ingot growth direction were significantly affected by the amount of excess Te and growth rate due to the retrograde solubility of Te and the segregation of free Te in the matrix. The 5 wt% excess Te-doped 22.5% Bi₂Te₃-77.5% Sb₂Te₃ single crystal, grown at 0.1 ㎜/min, exhibited a figure-of-merit higher than 3.2×10^(-3)/K. However, the figure-of-merit at the last frozen part of such ingot decreased significantly due to the segregation of free Te. With charging 5 wt% excess Te-doped 22.5% Bi₂Te₃-77.5% Sb₂Te₃ at the first-to-freeze part and 0.2 wt% Te-deficient 22.5% Bi₂Te₃-77.5% Sb₂Te₃ at the last-to-freeze part, p-type single crystals with the figure-of-merit higher than 3.2×10^(-3)/K throughout the whole ingot were obtained.