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플라즈마방전 시뮬레이션을 위한 C₄F? 분자기체의 초기전자충돌 단면적 개발
류선미(Sun-Mi Ryu),이경엽(Kyung-Yeob Lee),조두용(Doo-Yong Jo),전병훈(Byung-Hoon Jeon) 대한전기학회 2010 대한전기학회 학술대회 논문집 Vol.2010 No.7
For quantitative understanding of gas discharge phenomena, we should know electron collision cross section. Processing plasma etching of semiconductor, and research are being used in the etching source C₄F? gas may be used by itself and mixed with other gases are also used. However, the molecular gas C₄F? study on the characteristics of the electron transport and the cross-sectional area of the decision is still lacking. Therefore, we understand the electron transport characteristics and analysed the electron transport coefficients. And to understand and interpret physical properties of the ionization coefficient α/N, and the attachment coefficient η/N in C₄F? gas.