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김광일(K. I. Kim),이상환(S. H. Lee),정욱진(W. J. Chung),배영호(Y. H. Bae),권영규(Y. K. Kwon),김범만(B. M. Kim),桑野 博(H. Kuwano) 한국진공학회(ASCT) 1993 Applied Science and Convergence Technology Vol.2 No.4
Si 기판에 Ar 이온을 주입하였을 때 형성된 결함의 급속열처리 온도에 따른 성장 및 회복기구를 단면 투과전자현미경과 RB(Rutherford backscattering) spectra 그리고 thermal wave(TW) modulation reflectance법으로 분석하였다. Dose 량이 1×10^(15)㎝^(-2)의 경우에 표면에서부터 연속적인 비정질층이 형성되었으나, 그 이하의 dose량에서는 비정질층이 형성되지 않았다. 비정질층이 형성되지 않은 시편은 열처리온도가 올라감에 따라서 서서히 결함이 회복되지만 1100℃의 고온에서도 많은 결함이 소멸되지 않고 남아있었다. 그리고, 표면으로부터 연속적으로 형성된 비정질층은 열처리에 의해 재결정화가 진행되나 비정질/결정질 계면의 기복이 심하고 이로 인해 micro twin, 결함 cluster 등이 밀집된 또다른 결함층을 표면 근처에 형성하며, 이들 결함들은 고온에서도 완전히 소멸되지 않았다. Damages on Si substrate induced by Ar ion implantation and its annealing behavior during rapid thermal annealing were investigated by the cross-sectional TEM (transmission electron microscopy), RB (Rutherford backscattering) spectra and thermal wave (TW) modulation reflectance methods. Continuous amorphous layer extending to the surface were generated by Ar ion implantation for higher doses than 1×10^(15)㎝^(-2). The recrystallization of the amorphous layer proceeded as the annealing temperature increased. However the amorphous/crystal interfacial undulations caused the micro twins and damage clusters. Damage clusters generated by lower doses than 1×10^(15)㎝^(-2) disappeared slowly as the annealing temperature increased, but even at 1100℃ a few damage clusters still remained.
정욱진,권영규,배영호,김광일,강봉구,손병기 ( W. J . Chung,Y . K . Kwon,Y . H . Bae,K . I . KIm,B . K . Kang,B . K . Sohn ) 한국센서학회 1996 센서학회지 Vol.5 No.1
Silicon epitaxial films of submicron level were successfully grown by the RTCVD method. For the growth of silicon epitaxial layers, SiH₂Cl₂/ H₂ gas mixtures and various process parameters including Hz prebake process were used. The growth conditions were varied to investigate their effects on the interface abruptness of doping profile, the film growth rates and crystalline properties. The crystallinity of the undoped silicon was excellent at the growth temperature of 900℃. The doping profiles were measured by SIMS technique. The abruptness of doping profile would be controlled within about 200A /decade in the structure of undoped Si / n^+ -Si substrate.
RTCVD 법으로 성장한 Si1-xGex 에피막의 특성
정욱진,군영규,배영호,김광일,강봉구,손병기 ( W . J . Chung,Y . K . Kwon,Y . H . Bae,K . I . Kim,B . K . Kang,B . k. Sohn ) 한국센서학회 1996 센서학회지 Vol.5 No.2
The growth and characterization of heteroepitaxial Si_(l-x)Ge_x films grown by the RTCVD (Rapid Thermal Chemical Vapor Deposition) method were described. For the growth of Si_(l-x)Ge_x heteroepitaxial layers, SiH₄/ GeH₄ / H₂ gas mixtures were used. The growth conditions were varied to investigate their effects on the Si / Ge composition ratios, the interface abruptness and crystalline properties. The experimental data shows that the misfit threading dislocation in Si_(l-x)Ge_x / Si heteroepitaxial film of about 400 A thickness was not observed at the growth temperature of as low as 650℃, and the composition ratios of Si / Ge changed linearly with SiH₄ / GeH₄ gas mixing ratios in our experimental ranges. In the in-situ boron doping experiments, the doping abruptness would be controlled within several hundreds Å/decade.
HF:H₂O₂:CH₃COOH 용액을 이용한 실리콘-져마늄 에피막의 화학적 선택 식각
안창근,정욱진,배영호,김광일,강봉구,권영규,손병기 경북대학교 센서기술연구소 1995 센서技術學術大會論文集 Vol.6 No.1
The selective chemical etching of Si_(1)-_(x)Ge_(x). heteroepitaxial layer grown by rapid thermal CVD (RTCVD) method has been studied with respect to Ge content ( 0.15 ≤ x ≤ 0.30 ). The properties of HF : H_(2)O_(2) : CH_(3)COOH (1:2:3) chemical etchant is highly selective in the Si_(1)-_(x)Ge_(x) / Si heteroepitaxial structure. The selectivity is presented better than 100 for Ge content (x≥0.20) and increased with Ge content in Si_(1)-_(x)Ge_(x) heteroepitaxial layer.