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조현수(Hyeonsu Cho),정우주(Wooju Jeong),최준용(Joonyoung Choi),서명해(Myung-Hae Seo),윤솔(Sol Yoon),이승호(Seung-Ho Lee),임태욱(Taiuk Rim),백창기(Chang-Ki Baek) 대한전자공학회 2016 대한전자공학회 학술대회 Vol.2016 No.6
We compare sensing performances of the inversion mode (IM) and the depletion mode (DM) ion sensitive field effect transistors (ISFETs) in terms of pH sensitivity and signal-to-noise ratio (SNR). The low frequency noise characteristic is measured to calculate SNR. The IM ISFETs show higher sensitivity and SNR, which are highly desirable properties in practical use, than the DM ISFETs.