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수용성 TMAH 암모니아계를 이용한 실리콘 이방성 식각
정귀상,송승환,박진성,최영규 동서대학교 부설 연구소 1996 연구소 논문집 Vol.1 No.-
Si anistropic etching is a key technology for micromachining. The main advantages of teramethyl ammonium hydroxide (TMAH)-based solution are their full compatibility with IC process. In this paper, the anisotropic etching characteristics of single crystal Si in a TMAH ((CH??)??NOH) based solution was described. The influence of the adition of IPA to TMAH solution on their etching characteristics was also presented. The etching rate ratio of Si (111)/(100) is increased with increasing TMAH concentration. The addition of IPA to TMAH solution leads to smoother furfaces of sidewalls etched planes and reduce undercutting ratio by a factor of 2-3. Finally, the p?? Si anisotropic etching characteristics by means of heavily boron doping was investigated.