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금속 마스크 스크린이 금속 재결합 전류와 태양전지 특성에 미치는 영향
이욱철(Uk Chul Lee),정명상(Myeong Sang Jeong),이준성(Joon Sung Lee),송희은(Hee-eun Song),강민구(Min Gu Kang),박성은(Sungeun Park),장효식(Hyo Sik Chang),이상희(Sang Hee Lee) 한국태양광발전학회 2021 Current Photovoltaic Research Vol.9 No.1
The mesh mask screen, which is generally used for screen printing metallization of silicon solar cell, requires high squeegee pressure and low printing speed. These requirements are acting as a limiting factor in production yield in photovoltaic industries. In order to improve the productivity, a metal mask, which has high durability and high printing speed, has been researched. In this paper, the characteristics of each solar cell, in which electrodes were formed by using a metal mask and a mesh mask, were analyzed through recombination current density. In particular, the metal-induced recombination current density (Jom) representing the recombination of the emitter-metal interface was calculated using the shading method, and the resulting efficiency and open-circuit voltage were analyzed through the diode equation. As a result of analyzing the proportion of the metal-induced recombination current density to the total emitter recombination current density, it was analyzed that the reduction of the metal-induced recombination current density through the metal mask is an important factor in reducing the total recombination current density of the solar cell.
Poly-Si 두께와 인쇄전극 소성 온돈가 TOPCon 태양전지의 금속 재결합과 접촉비저항에 미치는 영향
이상희(Sang Hee Lee),양희준(Hee Jun Yang),이욱철(Uk Chul Lee),이준성(Joon Sung Lee),송희은(Hee-eun Song),강민구(Min Gu Kang),윤재호(Jae Ho Yoon),박성은(Sungeun Park) 한국태양광발전학회 2021 Current Photovoltaic Research Vol.9 No.4
Advances in screen printing technology have been led to development of high efficiency silicon solar cells. As a post PERx structure, an n-type wafer-based rear side TOPCon structure has been actively researched for further open-circuit voltage (Voc) improvement. In the case of the metal contact of the TOPCon structure, the poly-Si thickness is very important because the passivation of the substrate will be degraded when the metal paste penetrates until substrate. However, the thin poly-Si layer has advantages in terms of current density due to reduction of parasitic absorption. Therefore, poly-Si thickness and firing temperature must be considered to optimize the metal contact of the TOPCon structure. In this paper, we varied poly-Si thickness and firing peak temperature to evaluate metal induced recombination (Jom) and contact resistivity. Jom was evaluated by using PL imaging technique which does not require both side metal contact. As a results, we realized that the SiNx deposition conditions can affect the metal contact of the TOPCon structure.