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이진구,윤진섭,유종학 東國大學校 1990 論文集 Vol.29 No.-
In this paper, GaAs MESFET's were fabricated on a VPE-grown epitaxial wafer and the MESFET's are fabricated with the processing steps which follow:initial cleaning, MESA etching, ohmic metallizations, recess etching and gate metallizations and analysed for the purpose of developing unit processes to use in fabrication os GaAs SRAM's.