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비정질 GeSe 박막으로의 은-광도핑에 대한 기판의존성
여종빈,윤상돈,이현용,Yeo, Jong-Bin,Yun, Sang-Don,Lee, Hyun-Yong 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.10
The dependence of substrate on the Ag photodoping phenomenon into amonhous $({\alpha}-)$ GeSe thin film has been investigated using holographic method. A 442 nm HeCd laser was utilized as a light source for the holographic exposure and a 632.8 nm HeNe laser to measure the variation of diffraction efficiency $(\eta)$ in real time. The films (Ag and ${\alpha}-GeSe$) were thermally deposited on the substrates, i.e. p-type Si(100), n-type Si(100) and slide glass. The sample structures prepared were two types: type I (Ag/${\alpha}$-SeGe/substrate) and type II (${\alpha}$-SeGe/Ag/substrate). The $\eta$ kinetics comprised to be three steps in which $\eta$ initially increases, is saturated to be maximized $(\eta_M)$, and then decreases relatively gradually. For the same substrate, the $\eta_M$ values of the type II were higher than those of type I. In addition, the type II exhibited the highest $\eta_M$ for p-type Si substrate, while that in type I was observed for n-type Si substrate. These tendency is explained by the diffusion of minority carrier in the films and the change of magnitude and direction in internal fields generated at the film interfaces. Atomic-force-microscope (AFM) was used to observe relief-type grating patterns.
다중노광 나노구 리소그라피를 이용한 쌍-광자결정 어레이 제작
여종빈,한광민,이현용,Yeo, Jong-Bin,Han, Gwang-Min,Lee, Hyun-Yong 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.3
Two dimensional(2D) pair-photonic crystals (pair-PCs) have been fabricated by a multiple-exposure nanosphere lithography (MENSL) method using the self-assembled nanospheres as lens-mask patterns and the collimated laser beam as a multiple-exposing source. The arrays of the 2D pair-PCs exhibited variable lattice structures and shape the control of rotating angle (${\Theta}$), tilting angle (${\gamma}$) and the exposure conditions. In addition, the base period or filling factor of pair-PCs as well as their shapes could be changed by experimental conditions and nanosphere size. A 1.18-${\mu}m$-thick resist was spincoated on Si substrate and the multiple exposure was carried out at change of ${\gamma}$ and ${\Theta}$. Images of prepared 2D pair-PCs were observed by SEM. We believe that the MENSL method is a suitable useful tool to realize the pair-periodic arrays of large area.
FDTD 시뮬레이션을 이용한 정방형 2차원 광자결정에서의 광자 밴드갭 특성
여종빈,양회영,이현용,Yeo, Jong-Bin,Yang, Hoe-Young,Lee, Hyun-Yong 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.1
Characteristics of the photonic bandgaps (PEGs) in two-dimensional photonic crystals (2D PCs) with a square lattice have theoretically studied using a finite difference time domain (FDTD) simulation. In this paper, we propose a concept of optical coverage ratio (OCR) as a new structural parameter to determine the PEGs for E-polarized light. The OCR is an optically compensated filling factor. It is possible to normalize the PEGs of 2D PCs by introducing the OCR.
전기탈이온시스템 응용을 위한 주기적 홀을 갖는 금속 전극 제작에 관한 연구
여종빈,선상욱,이현용,Yeo, Jong-Bin,Sun, Sang-Wook,Lee, Hyun-Yong 한국전기전자재료학회 2013 전기전자재료학회논문지 Vol.26 No.3
Electrodeionization is a hybrid separation process of electrodialysis and ion exchange to produce high purity water under electric field. This article provides a fabrication result of hole patterned metal electrode for elecrodeionization system. The hole patterns have been fabricated by nanosphere lithography (NSL). The technique utilizes the self-assembled nanospheres as lens-mask patterns and collimated laser beam source. The hole patterns have a periodic array structure. The images of hole pattern on metal electrode prepared were observed by SEM. We believe that the periodic hole patterned metal electrode structure is a useful device applicable for metal mat electrode in electrodeionization system.
여종빈,윤상돈,이현용,Yeo, Jong-Bin,Yun, Sang-Don,Lee, Hyun-Yong 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.8
Two dimensional photonic crystals (2D PCs) have been fabricated by a double exposure holographic method using a He-Cd laser with a wavelength of 442nm. The arrays of the 2D PCs exhibit variable lattice structures from square to triangle according to a change of rotating angle $({\gamma})$ for double exposure beams. In addition, the period and filling factor of PCs as well as the forms (dot or antidot) could be controlled by experimental conditions. $A l.18-{\mu}m-thick$ resist was spin-coated on Si substrate and the 1st holographic exposure was carried out at incident angle $({\theta})$ of $11^{\circ}$. Then the sample was rotated to ${\gamma}=45^{\circ}{\sim}90^{\circ}$ and the 2nd holographic process was performed at ${\theta}=11^{\circ}$. The variation of diffraction efficiency during the exposure process was observed using a He-Ne laser in real time. The images of 2D PCs prepared were analyzed by SEM and AFM. We believe that the double holographic method is a tool suitable to realize the 2D PCs with a periodic array of large area.
나노스피어 리소그라피를 이용한 OLED 광추출 효율의 향상
한광민,여종빈,이현용,Han, Gwang-Min,Yeo, Jong-Bin,Lee, Hyun-Yong 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.12
The light extraction efficiency of top-emitting organic light-emitting diode (OLED) was improved by insertion of corrugation patterns between indium tin oxide and organic layers. The corrugation patterns was fabricated by nanosphere lithography, which could form a self-assembled particle monolayer over a large area. The electrical and optical properties for the OLED devices fabricated by vacuum evaporation, were investigated. We have demonstrated the enhancement of the power efficiency of corrugated OLED. As a result, the power efficiency of the corrugated OLED was found to be more than 42%.
적외선 광학렌즈 제작을 위한 GeSe의 벌크 제작 및 특성 연구
배동식,여종빈,박정후,이현용,Bae, Dong-Sik,Yeo, Jong-Bin,Park, Jung-Hoo,Lee, Hyun-Yong 한국전기전자재료학회 2013 전기전자재료학회논문지 Vol.26 No.9
Chalcogenide glass has superior property of optical transmittance in the infrared region. Glass made using Ge-Se how many important optical applications. We have determined the composite formular of $Ge_{0.25}Se_{0.75}$ to be the GeSe chalcogenide glass composition appropriate for IR lenses. Also, the optical, thermal and physical characteristics of chalcogenide glass depended on the composition ratio. GeSe bulk sample is produced using the traditional melt-quenching method. The optical, structural, thermal and physical properties of the compound were measured by using Fourier transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD), Differential scanning calorimeter (DSC), and Scanning electron microscope (SEM) respectively.
비정질-결정질 가역적 상변환 소자용 Ge<sub>8</sub>Sb<sub>2</sub>Te<sub>11</sub> 박막의 W 도핑에 따른 상변환 특성 평가
박철진,여종빈,공헌,이현용,Park, Cheol-Jin,Yeo, Jong-Bin,Kong, Heon,Lee, Hyun-Yong 한국전기전자재료학회 2017 전기전자재료학회논문지 Vol.30 No.3
We evaluated the structural, electrical and optical properties of tungsten (W)-doped $Ge_8Sb_2Te_{11}$ thin films. In a previous work, GeSbTe alloys were doped with different materials in an attempt to improve thermal stability. 200 mm thick $Ge_8Sb_2Te_{11}$ and W-doped $Ge_8Sb_2Te_{11}$ films were deposited on p-type Si (100) and glass substrates using a magnetron co-sputtering system at room temperature. The fabricated films were annealed in a furnace in the $0{\sim}400^{\circ}C$ temperature range. The structural properties were analyzed using X-ray diffraction (X'pert PRO, Phillips). The results showed increased crystallization temperature ($T_c$) leading to thermal stability in the amorphous state. The optical properties were analyzed using an UV-Vis-IR spectrophotometer (Shimadzu, U-3501, range : 300~3,000 nm). The results showed an increase in the crystalline material optical energy band gap ($E_{op}$) and an increase in the $E_{op}$ difference (${\Delta}E_{op}$). This is a good effect to reduce memory device noise. The electrical properties were analyzed using a 4-point probe (CNT-series). This showed increased sheet resistance ($R_s$), which reduces programming current in the memory device.
TeO<sub>x</sub>(2<x<3)/SiO<sub>2</sub> 1차원 광자결정의 광학 특성평가
공헌,여종빈,이현용,Kong, Heon,Yeo, Jong-Bin,Lee, Hyun-Yong 한국전기전자재료학회 2014 전기전자재료학회논문지 Vol.27 No.12
One-dimensional (1D) photonic crystals (PCs) were prepared by $TeO_x(2<x<3)/SiO_2$ with the difference refractive index, and fabricated by sputtering technique from a $TeO_2$ and $SiO_2$ target. The $TeO_x$(2<x<3) layers were fabricated by using the sputtering gas ratio ($Ar:O_2=40:10$). A 10-pair $TeO_x(2<x<3)/SiO_2$ 1D PCs were fabricated with the structure parameters of filling factor=0.5185, and period=410 nm. The properties of 1D PCs with and without a defect layer were evaluated by UV-VIS-NIR. A normal mode 1D PC have a photonic band gap (PBG) in the near infrared (NIR) region from 1,203 to 1,421 nm. In the case of 1D PC containing a defect layer, a defect level appears at 1,291 nm. The measured transmittance (T) spectra are nearly corresponding to calculated results. After He-Cd laser exposure, the defect level is shifted from 1,291 nm to 1,304 nm.
윤상돈,여종빈,이현용,Yun, Sang-Don,Yeo, Jong-Bin,Lee, Hyun-Yong 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.9
Two-dimensional photonic quasicrystal (PQCs) template patterns have been fabricated on a 1.1 ${\mu}m$-thick DMI-150 photoresist using a multiple-exposure holographic method. A 442-nm HeCd laser was utilized as a light source and the holographic exposure was carried out at a fixed angle of ${\theta}$ = 6$^{\circ}$. After the first holographic exposure, the sample was rotated to a proper angle and the second exposure was performed to the same manner. This exposure process was repeated n/2 times to obtain n-fold symmetric PQC patterns and then the sample was developed. The diffraction patterns of the fabricated PQC template were observed using a 632.8-nm HeNe laser. The fabricated PQCs exhibited 8, 10 and 12-fold rotational symmetry, which was in a good agreement with the interference simulation results. In addition, the diffraction patterns with n-rotation symmetry were observed for the corresponding n-fold PQCs. We believe that the multiple-exposure holography is a good method to fabricate the mesoscale PQCs with a high rotational symmetry.