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RF 마그네트론 스퍼터링법으로 성장시킨 CuS 박막의 구조적 및 광학적 특성
신동혁(Donghyeok Shin),이상운(SangWoon Lee),손창식(Chang Sik Son),손영국(Young Guk Son),황동현(Donghyun Hwang) 한국표면공학회 2020 한국표면공학회지 Vol.53 No.1
CuS (copper sulfide) thin films having the same thickness of 100nm were deposited on the glass substrates using by radio frequency (RF) magnetron sputtering method. RF powers were applied as a process variable for the growth of CuS thin films. The structural and optical properties of CuS thin films deposited under different power conditions (40-100W) were studied. XRD analysis revealed that all CuS thin films had hexagonal crystal structure with the preferential growth of (110) planes. As the sputtering power increased, the relative intensity of the peak with respect to the (110) planes decreased. The peaks of the two bands (264㎝<SUP>-1</SUP> and 474㎝<SUP>-1</SUP>) indicated in the Raman spectrum exactly matched the typical spectral values of the covellite (CuS). The size and shape of the grains constituting the surface of the CuS thin films deposited under the power condition ranging from 40W to 80W hardly changed. However, the spacing between crystal grains tended to increase in proportion to the increase in sputtering power. The maximum transmittance of CuS thin films grown at 40W to 80W ranged from 50 % to 51 % based on 580㎚ wavelength, and showed a relatively small decrease of 48% at 100W. The band gap energy of the CuS thin films decreased from 2.62eV (at 40W) to 2.56eV (at 100W) as the sputtering power increased.
RF 마그네트론 스퍼터링 방법으로 증착된 CuS 박막의 구조적 및 광학적 특성에 대한 스퍼터링 전력의 영향
이상운(Sangwoon Lee),신동혁(Donghyeok Shin),손영국(Young Guk Son),손창식(Chang Sik Son),황동현(Donghyun Hwang) 한국태양광발전학회 2020 Current Photovoltaic Research Vol.8 No.1
CuS thin films were deposited on glass substrates at room temperature by RF magnetron sputtering. The structural and optical properties of CuS thin films grown by varying RF-power from 40 W to 100 W were studied. From the XRD analysis, we confirmed hexagonal crystal structures grown in the preferred orientation of the (110) plane in all CuS thin films, and the intensity of the main diffraction peak increased in proportion to the increase of RF-power. In the case of CuS thin film deposited at 40W, small-sized particles formed a thin and dense surface morphology with narrow pore spacing, relatively. As the power increased, the grain size and grain boundary spacing increased sequentially. The peaks for the binding energy of Cu 2p3/2 and Cu 2p1/2 were determined at 932.1 eV and 952.0 eV, respectively. The difference in binding energy for the Cu<SUP>2+</SUP> states was the same at 19.9 eV regardless of process parameters. The transmittance and band gap energy in the visible region tended to decrease with increasing sputtering powers.