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서용진(Y. J. Seo),김길호(K. H. Kim),이우선(W. S. Lee) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.7
An electrostatic discharge (ESD) protection device, so called, N-type extended drain silicon controlled rectifier (NEDSCR) device, was analyzed for high voltage I/O applications. A conventional NEDSCR device shows typical SCR-like characteristics with extremely low snapback holding voltage. This may cause latchup problem during normal operation. However, a modified NEDSCR device with proper junction / channel engineering demonstrates itself with both the excellent ESD protection performance and the high latchup immunity.
서용진(Y. J. Seo),김길호(K. H. Kim),이우선(W. S. Lee) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.7
An electrostatic discharge (ESD) protection device, so called, N-type SCR with P-type MOSFET pass structure (NSCR_PPS), was analyzed for high voltage I/O applications. A conventional NSCR_PPS device shows typical SCR-like characteristics with extremely low snapback holding voltage, which may cause latchup problem during normal operation. However, a modified NSCR_PPS device with proper junction/channel engineering demonstrates highly latchup immune current-voltage characteristics.