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결정 마당(crystal field) 변화에 따른 터븀 글래스 발광 스펙트럼의 변화
박타령 한국물리학회 2005 새물리 Vol.50 No.3
Hydrostatic pressures up to 56 Kbar were applied on terbium glass to produce a variation of photoluminescence (PL). The increased splitting of PL peaks observed at high pressures indicates that the crystal eld on the Tb3+ ions is strengthened by the pressure. The pressure increases the PL intensities of the 587 nm and the 623 nm peaks relative to that of the 543 nm peak,which proves the suggestion made by Tonooka and Nishimura that the PL of Tb3+ becomes reddish due to strengthened crystal eld in borosilicate glass by calcination at high temperature.
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Pressure-induced structural phase transition of KY_0.9_Er_0.1_F₄
박타령 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.60 No.5
By investigating the photoluminescence (PL) of KY0.9Er0.1F4 crystals under high pressure, we find that a structural phase transition occurs at a pressure around 57 kbar. In the new phase, the upconversion efficiency of the PL increases. After reaching the new phase, the crystal does not return to its original phase, not even after the pressure is completely released. From the measurement of the time-resolved PL, we find that the admixture of 4f and 5d wavefunctions is suddenly reduced as the transition occurs; accordingly, the new phase has a lattice with higher symmetry and smaller spacing than the original one.
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Thermally up-converted photoluminescence of Er^3+ ions in KY_0.9Er_0.1F_4 crystal by level crossing
박타령 한국물리학회 2011 Current Applied Physics Vol.11 No.5
When excited by 532 nm photons, the Er^3+ ions in KY_0.9Er_0.1F_4 crystal emit photoluminescence (PL)around 520 nm, in addition to previously reported up-converted emission around 410 nm. While the intensity of the latter varies non-linearly with excitation power, the former shows a linear behavior,which implies that an electron in the 520 nm up-conversion process neither requires other electron’s assistance nor needs two photons for the up-conversion to occur. We explain this 520 nm up-conversion by a level crossing mechanism which provides the two levels 2^H(2)_11/2 and 4^S_3/2 with a thermal equilibrium. This is in agreement with the observed increasing up-conversion efficiency with increasing temperature. The thermal equilibrium of the two levels is possible by the proximity of the two levels and also by the long lifetime of the PL even with a short pulsed excitation.
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Effect of Er3+ concentration on the structural phase transition and rigidity of Er3+ doped KYF4
박타령 한양대학교 세라믹연구소 2016 Journal of Ceramic Processing Research Vol.17 No.10
Er3+ doped KYF4 crystals show two structural transitions in the pressure range of 0 to ~70 kbar, as indicated by the abruptchanges of photoluminescence (PL) they exhibit. The crystal with 0.05 at.% Er3+ ions (KY0.9995Er0.0005F4) showed a higher firsttransition pressure (around 40 kbar) and a lower second transition pressure (around 55 kbar) than the crystal with 10 at.%Er3+ ions (KY0.9Er0.1F4), which indicates that rigidity reversal between the two crystals occurs at the first transition. Thisbehavior is explained in terms of the pillaring effect where Y3+ ions are acting as pillars so that the internal stress on the Er3+ions is alleviated while in the first phase. The Y3+ ions and the Er3+ ions are differentially compressed until the first transitionwhere the radii of both species become equal. After the first transition, the Y3+ ions stop functioning as pillars, leading to anenhanced deformation of the Er3+ ions. This effect is evident in the increased pressure-shift rates of the PL in the second phase.
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박타령(Ta-Ryeong Park) 호서대학교 공업기술연구소 2009 공업기술연구 논문집 Vol.28 No.1
본 논문에서는 약 lOOkbar 까지의 고압력하에서 일어나는 물리 현상의 일부를 소개한다 . 분 광학적 방법을 사용하면 고압력이 S i - G e multiple quantum w ell에 서 는 resonant Ram an 효과를 유도 하며 , layered solid에 서 는 staging transformation을 야기하고 ,molecular crystal 인 pentaerythritol에 서 는 structural phase transition을 일으킴을 관찰 할 수 있다 . 고압력을 이용하 면 고압력에서의 현상뿐만 아니라 상압에서의 현상도 연구할 수 있다 .
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Transparent and Highly Luminescent Eu-Oxide Thin Film Phosphors on Sapphire Substrates
채기웅,박타령,천채일,조남인,김정석 대한금속·재료학회 2013 ELECTRONIC MATERIALS LETTERS Vol.9 No.-
Transparent and highly luminescent thin film phosphors were prepared by the thermal evaporation of Euoxide and its subsequent deposition on (006) sapphire substrates in a vacuum in a strongly reducing atmosphere at 1200°C - 1300°C. The resulting phosphor films, which were 1 - 3 μm thick, strongly adhered to the substrate and exhibited photoluminescence spectra similar to those of Eu-doped β"-alumina, with an emission peak centered at about 525 nm. The films consisted of Eu2O3 and β"-alumina phases with preferential growth planes. The transparency of the thin film phosphors was measured over the UV-visible range (370 - 720 nm). The average transparency was 26% - 55% of the total incident light. The integrated photoluminescence intensities of the phosphor films were compared to that of a commercial powder phosphor with green-light emission.
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Pressure-induced Resonance Raman Effect of InAsxP1−x Alloy Films on InP
변준석,김영동,박타령 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.61 No.10
We have studied the effect of hydrostatic pressure on the Raman spectra of the InAs<I><SUB>x</SUB></I>P<SUB>1-<I>x</I></SUB> alloy films that were grown on InP substrates. The high-pressure Raman scattering provides very useful information on the microscopic properties of the materials because electronic transition can be controlled by the pressure. The samples with intermediate compositions (0 < x < 1) exhibit both InAs-like and InP-like mode at all the pressures (up to ~80 kbar) we tried. It is well known that pressure increases the magnitude of E1 band gap whose magnitude is responsible for the Raman scattering efficiency of the related materials such as InP and GenSim multiple quantum wells. Using 457.9 nm (2.708 eV) line of argon ion laser we could observe enhanced Raman scattering efficiency for the three x = 0.7, x = 0.75, and x = 0.8 alloys at certain pressures, which indicates that the three samples have E1 band gap below 2.708 eV at ambient pressure. (Notice that both InAs-like and InP-like mode show resonance features). This result is consistent with the measurement of the electronic structure by ellipsometry. The shift-rates of E1 band gap of the three samples are comparable to that of InP. The resonance of ternary alloys with wider widths than InAs indicates that they have spatially fluctuating E1 band gaps, although good electronic band structures are maintained.
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