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전계에 따른 GM-APD의 다크 카운트와 광 검출효율의 상관관계 연구
유현(Hyun Yoo),김형택(Hyoungtaek Kim),조규성(Gyuseong Cho),설우석(Woo-Suk Sul) 대한전자공학회 2016 대한전자공학회 학술대회 Vol.2016 No.6
In this work, it was comparatively assessed using Silvaco TCAD simulator that the variation of electric filed distribution in GM-APD(Geiger Mode-Avalanche Photodiode) depending on the P-well dose, results in dark count rate(DCR) and photon detection efficiency(PDE). The electric field near the p-n junction interface in GM-APD is mainly affected by P-well dose. According to the dark count extracted from simulation, the increased electric field at the dose over 4.5×10<SUP>12</SUP>(#/㎠) makes DCR generated by band-to-band tunneling(BBT) increase drastically. PDE decreases as the P-well dose level lowers more. In particular, when the dose level is under 4.5×10<SUP>12</SUP>(#/㎠), PDE declines rapidly. Consequently, it will be helpful to reduce the occurrence of dark count by BBT and minimize the deterioration in PDE if the P-well dose of GM-APD is set to 4.5×10<SUP>12</SUP>(#/㎠).