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X-선 회절분석법에 의한 $Ba(Zn_{1/3}Ta_{2/3})O_3$의 격자 비틀림 측정
김정돈,김인태,제해준,Kim, Chong-Don,Kim, In-Tae,Je, Hae-June 한국분석과학회 1992 분석과학 Vol.5 No.1
$Ba(Zn_{1/3}Ta_{2/3})O_3$는 고온에서 열처리시 Zn과 Ta 이온이 ordering을 일으키며 이때 격자 비틀림이 일어난다. 본 실험에서는 이러한 격자비틀림을 X-선 분말회절법을 사용하여 1/10,000 이상의 정밀도로 측정하였으며, 그 결과 $Ba(Zn_{1/3}Ta_{2/3})O_3$는 $1350^{\circ}C$ 30분 소결시에도 상당한 정도의 격자 비틀림이 발생하며 이러한 격자비틀림은 소결시간이 길어질수록 증가함을 관찰하였다. Ordering phenomena were observed for Zn and Ta cations of $Ba(Zn_{1/3}Ta_{2/3})O_3$ under particular heat treatments, followed by a considerable lattice distortion. This lattice distortion was measured by X-ray powder diffraction with a precision of higher than 1/10,000. From this investigation, a significant lattice distortion occurred within 30 min. of sintering at $1350^{\circ}C$, and it was increased with sintering time.
Raman 분광법을 이용한 $Li_{1-X}Al_{2X}Ta_{1-X}O_3$ 고용한계 분석
김정돈,홍국선,주기태,Kim, Chong-Don,Hong, Kug-Sun,Joo, Gi-Tae 한국분석과학회 1992 분석과학 Vol.5 No.1
강유전체인 $LiTaO_3$ 소재는 SAW filters나 IR sensors의 기본재료로 사용되고 있다. Dopant로서 $Al_2O_3$를 $LiTaO_3$에 일부 치환함으로써 유전 특성을 변화시키고 특히 용융점을 낮춤으로써 단결정 제조를 용이하게 한다. X-선 회절분석에 의한 격자상수 변화와 Raman spectroscopy의 band broadening을 측정한 결과 $LiTaO_3$에 대한 $Al_2O_3$의 고용한계가 $Li_{1-X}Al_{2X}Ta{1-X}O_3$에서 X=0.25mol이었으며, 고용한계 이상에서는 2차상인 $Al_2O_3$상이 XRD로 관찰되었다. Grain size에 의한 Raman band의 broadening을 고려하기 위하여 단결정과 소결체 $LiTaO_3$를 측정 비교하였다. The upper limit of solid solution of $Al_2O_3$ in $LiTaO_3$ was investigated using X-ray diffraction and Raman spectroscopy. By substituting cations in $LiTaO_3$ with $Al^{3+}$, the melting temperature was lowed and the ferroelectric properties can be improved. It is easier at lower temperature to fabricate the single crystal used for SAW filters and IR sensors. From the measured lattice constants and Raman band broadening, the solubility limit was X=0.25mol in $Li_{1-X}Al_{2X}Ta{1-X}O_3$, above which $Al_2O_3$ was obsered as a second phase. The Raman band of sintered $LiTaO_3$ was compared with that of the single crystal to see the effect of grain size on the band broadening.
표면 코팅된 분말을 이용하여 제조된 반도성 $SrTiO_3$ 소결체의 입계화학과 전기적 특성
박명범,김정돈,허현,조남희,Park, Myung-Beom,Kim, Chong-Don,Heo, Hyun,Cho, Nam-Hee 한국세라믹학회 1999 한국세라믹학회지 Vol.36 No.11
The defect chemistry and electrical characteristics of the grain boundaries of semiconducting SrTiO3 ceramics synthesized with wet-chemically surface-coated powders were investigated. The starting powders were separated into groups of 1-10${\mu}{\textrm}{m}$ 10-20${\mu}{\textrm}{m}$ etc by sedimentation and sieving methods. Na+ ions were absorbed on the powder surfaces by wet chemical-treatment method. The width of the grain boundary ranged up to several nm and the intergranular materials was amorphous. The additives coated on the surface of the powders were observed to be present at the grain boundaries of the ceramics. The diffusion depth of the additives into grains was about 30nm for the SrTiO3 ceramics synthesized with 5w/o coated materials, The threshold voltage grain boundary resistance and boundary potential barrier of the ceramics increased from 0.67V/cm 2.27k$\Omega$ and 0.05eV to 80.9V/cm 13.0k$\Omega$ 1.44eV with increasing the amount of the additives from 0 to 5 w/o respectively .