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아날로그 신호처리를 위한 NCS 기반 기술교육 프로그램 개발
조춘남,Cho, Choon-Nam 한국전기전자재료학회 2020 전기전자재료학회논문지 Vol.33 No.6
Vocational education needs to be transformed to cultivate talents with diverse fusion competencies, which is in line with the recent changes that have become a part of the complex technological developments in the 4th Industrial Revolution. Therefore, it is very important for college graduates to obtain employment skills as they are required to prepare for careers within the complex environments of future societies. With the transition to the Internet of Things (IoT)-based control in the manufacturing industry, the development of technological education and related training programs is required to cultivate practical talents for students who have acquired not only the information on existing programmable logic controller (PLC)-based technology, but also that on embedded programming technology. Therefore, to develop an NCS-based education program for analog signal processing to ensure that programming can easily be learned for cultivating practical talent, this study summarizes the opinions of field experts, selects the appropriate NCS competency unit, and designs an adequate technology education training program.
RF 스퍼터링법에 의한 세라믹 박막의 표면형상 및 구조
김진사(Jin-sa Kim),조춘남(Choon-nam Cho),최운식(Woon-shick Choi),송민종(Min-jong Song),소병문(Byeong-mun So),김충혁(Chung-hyeok Kim) 대한전기학회 2009 대한전기학회 학술대회 논문집 Vol.2009 No.7
The Sr<SUB>0.7</SUB>Bi<SUB>2.3</SUB>Nb₂O?(SBN) thin films are deposited on Pt-coated electrode(Pt/Ti/SiO2/Si) using RF sputtering method with RF power and Ar/O₂ ratio. The size of grain of SBN thin films were increased with the increase of Ar/O₂ ratio and RF power, respectively. Also, the crystallinity of SBN thin films were increased remarkably at RF power and Ar/O₂ ratio were 80[W] and 80/20, respectively.
열처리 온도에 따른 Sr_(0.8)Bi_(2.4)Ta_(2)O_(9) 박막의 구조적·전기적 특성
최운식,조춘남 대불대학교 2001 論文集 Vol.7 No.1
Sr_(0.8)Bi_(2.4)Ta_(2)O_(9)(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO_(2)/SiO_(2)/Si) using RF magnetron sputtering method. In the XRD pattern, the SBT thin films had (105) orientation. As annealing temperature was increased from 600℃ to 850℃, the intensities of peak increased. With increasing annealing temperature in the SEM image, Bi-layered perovskite phase was crystallized above 650℃ and rod-like grains grew above 750℃. The maximum remanent polarization and the coercive electronic field at annealing temperature of 750℃ are 11.60μC/㎠ and 48kV/cm, respectively. The dielectric constant and leakage current density at annealing temperature of 750℃ are 213 and 1.01×10^(-8) A/㎠, respectively.