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Jang, Jaeyoung,Nam, Sooji,Chung, Dae Sung,Kim, Se Hyun,Yun, Won Min,Park, Chan Eon WILEY‐VCH Verlag 2010 Advanced Functional Materials Vol.20 No.16
<P><B>Abstract</B></P><P>A novel application of ethylene‐norbornene cyclic olefin copolymers (COC) as gate dielectric layers in organic field‐effect transistors (OFETs) that require thermal annealing as a strategy for improving the OFET performance and stability is reported. The thermally‐treated <I>N</I>,<I>N′</I>‐ditridecyl perylene diimide (PTCDI‐C13)‐based n‐type FETs using a COC/SiO<SUB>2</SUB> gate dielectric show remarkably enhanced atmospheric performance and stability. The COC gate dielectric layer displays a hydrophobic surface (water contact angle = 95° ± 1°) and high thermal stability (glass transition temperature = 181 °C) without producing crosslinking. After thermal annealing, the crystallinity improves and the grain size of PTCDI‐C13 domains grown on the COC/SiO<SUB>2</SUB> gate dielectric increases significantly. The resulting n‐type FETs exhibit high atmospheric field‐effect mobilities, up to 0.90 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP> in the 20 V saturation regime and long‐term stability with respect to H<SUB>2</SUB>O/O<SUB>2</SUB> degradation, hysteresis, or sweep‐stress over 110 days. By integrating the n‐type FETs with p‐type pentacene‐based FETs in a single device, high performance organic complementary inverters that exhibit high gain (exceeding 45 in ambient air) are realized.</P>
Jang, Jaeyoung,Liu, Wenyong,Son, Jae Sung,Talapin, Dmitri V. American Chemical Society 2014 NANO LETTERS Vol.14 No.2
<P>We report on the temperature-dependent Hall effect characteristics of nanocrystal (NC) arrays prepared from colloidal InAs NCs capped with metal chalcogenide complex (MCC) ligands (In<SUB>2</SUB>Se<SUB>4</SUB><SUP>2–</SUP> and Cu<SUB>7</SUB>S<SUB>4</SUB><SUP>–</SUP>). Our study demonstrates that Hall effect measurements are a powerful way of exploring the fundamental properties of NC solids. We found that solution-cast 5.3 nm InAs NC films capped with copper sulfide MCC ligands exhibited high Hall mobility values over 16 cm<SUP>2</SUP>/(V s). We also showed that the nature of MCC ligands can control doping in NC solids. The comparative study of the temperature-dependent Hall and field-effect mobility values provides valuable insights concerning the charge transport mechanism and points to the transition from a weak to a strong coupling regime in all-inorganic InAs NC solids.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/nalefd/2014/nalefd.2014.14.issue-2/nl403889u/production/images/medium/nl-2013-03889u_0007.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nl403889u'>ACS Electronic Supporting Info</A></P>
Jang, Jaeyoung,Nam, Sooji,Hwang, Jihun,Park, Jong-Jin,Im, Jungkyun,Park, Chan Eon,Kim, Jong Min The Royal Society of Chemistry 2012 Journal of materials chemistry Vol.22 No.3
<p>Here we describe the use of photocurable poly(vinyl cinnamate) (PVCN) as a gate dielectric in high-performance cylindrical organic field-effect transistors (OFETs) with high bending stability. A smooth-surface metallic fiber (Al wire) was employed as a cylindrical substrate, and polymer dielectrics (PVCN and poly(4-vinyl phenol) (PVP)) were formed <I>via</I> dip-coating. The PVCN and PVP dielectrics deposited on the Al wire and respectively cross-linked <I>via</I> UV irradiation and thermal heating were found to be very smooth and uniform over the entire coated area. Pentacene-based cylindrical OFETs with the polymer dielectrics exhibited high-performance hysteresis-free operation. Devices made with the PVCN dielectric showed superior bending stability than devices made with PVP dielectrics or previously reported cylindrical OFETs due to the good flexibility of the PVCN dielectric. The devices maintained their excellent performance under bending at a bending radius comparable to the lowest value reported for planar OFETs.</p> <P>Graphic Abstract</P><P>High-performance cylindrical organic field-effect transistors (OFETs) showing high bending stability were demonstrated by using dip-coated photo-curable poly(vinyl cinnamate) (PVCN) gate dielectrics. <img src='http://pubs.rsc.org/ej/JM/2011/c1jm14091d/c1jm14091d-ga.gif'> </P>
Jang, Jaeyoung,Nam, Sooji,Yun, Won Min,Yang, Chanwoo,Hwang, Jihun,An, Tae Kyu,Chung, Dae Sung,Park, Chan Eon Royal Society of Chemistry 2011 Journal of materials chemistry Vol.21 No.33
<P>Here we present solution-processed ultrathin cyclic olefin copolymer (COC)/Al<SUB>2</SUB>O<SUB>3</SUB> bilayer gate dielectrics for low-voltage and flexible <I>N</I>,<I>N</I>′-ditridecyl perylene diimide (PTCDI-C13)-based n-type organic field-effect transistors (OFETs) and their complementary circuits. The PTCDI-C13 thin films grown on the COC/Al<SUB>2</SUB>O<SUB>3</SUB> bilayer gate dielectrics formed large and flat grains with thermal treatment, resulting in high OFET performance, and stability in an ambient air atmosphere. Despite the high glass transition temperature of the COC, the COC thin films showed good mechanical flexibility with the application of bending strain, and OFETs with bilayer gate dielectrics showed stable operation up to a strain of 1.0%. Complementary inverters based on the PTCDI-C13 and pentacene OFETs with bilayer dielectrics functioned at a low voltage of 5 V, and exhibited a high gain of 63.</P> <P>Graphic Abstract</P><P>Solution-processed ultrathin cyclic olefin copolymer/Al<SUB>2</SUB>O<SUB>3</SUB> bilayer gate dielectrics for low-voltage and air-stable operation of flexible organic complementary circuits were demonstrated. <IMG SRC='http://pubs.rsc.org/services/images/RSCpubs.ePlatform.Service.FreeContent.ImageService.svc/ImageService/image/GA?id=c1jm11544h'> </P>
Jang, Jaeyoung,Nam, Sooji,Im, Kyuhyun,Hur, Jaehyun,Cha, Seung Nam,Kim, Jineun,Son, Hyung Bin,Suh, Hwansoo,Loth, Marsha A.,Anthony, John E.,Park, Jong‐,Jin,Park, Chan Eon,Kim, Jong Min,Kim, Kinam WILEY‐VCH Verlag 2012 Advanced functional materials Vol.22 No.5
<P><B>Abstract</B></P><P>The preparation of uniform large‐area highly crystalline organic semiconductor thin films that show outstanding carrier mobilities remains a challenge in the field of organic electronics, including organic field‐effect transistors. Quantitative control over the drying speed during dip‐coating permits optimization of the organic semiconductor film formation, although the kinetics of crystallization at the air–solution–substrate contact line are still not well understood. Here, we report the facile one‐step growth of self‐aligning, highly crystalline soluble acene crystal arrays that exhibit excellent field‐effect mobilities (up to 1.5 cm V<SUP>−1</SUP> s<SUP>−1</SUP>) via an optimized dip‐coating process. We discover that optimized acene crystals grew at a particular substrate lifting‐rate in the presence of low boiling point solvents, such as dichloromethane (b.p. of 40.0 °C) or chloroform (b.p. of 60.4 °C). Variable‐temperature dip‐coating experiments using various solvents and lift rates are performed to elucidate the crystallization behavior. This bottom‐up study of soluble acene crystal growth during dip‐coating provides conditions under which one may obtain uniform organic semiconductor crystal arrays with high crystallinity and mobilities over large substrate areas, regardless of the substrate geometry (wafer substrates or cylinder‐shaped substrates).</P>
Foot Placement Method to Change Velocity of Running Biped Robot
Jaeyoung Jang,Jae Uk Cho,Jong-Hyeon Park 제어로봇시스템학회 2015 제어로봇시스템학회 국제학술대회 논문집 Vol.2015 No.10
In this paper, a method for a biped robot to run with a velocity change by selecting its foot landing position appropriately is proposed. The zero moment point (ZMP) is used as the criteria to identify the stability of the biped robot. The ZMP is estimated by the position of the center of mass (COM) and the acceleration of the robot. This means that by setting an appropriate ZMP for the robot, the acceleration of the robot can be controlled. In this paper, ZMP is not only used for stability criteria, but also used to change the velocity in running. The ZMP is designed to reach the desired velocity of the robot, and the trajectory to change the running velocity is generated made the assumption that the ZMP is the foot landing position. By using the method, the biped robot can run stably while changing its velocity. The performance of the proposed method was verified by computer simulations.
Jang, Jaeyoung,Park, Jaesung,Nam, Sooji,Anthony, John E,Kim, Youngsoo,Kim, Keun Soo,Kim, Kwang S,Hong, Byung Hee,Park, Chan Eon RSC Pub 2013 Nanoscale Vol.5 No.22
<P>Graphene has shown great potential as an electrode material for organic electronic devices such as organic field-effect transistors (FETs) because of its high conductivity, thinness, and good compatibility with organic semiconductor materials. To achieve high performance in graphene-based organic FETs, favorable molecular orientation and good crystallinity of organic semiconductors on graphene are desired. This strongly depends on the surface properties of graphene. Here, we investigate the effects of polymer residues that remain on graphene source/drain electrodes after the transfer/patterning processes on the self-organizing properties and field-effect characteristics of the overlying solution-processed triethylsilylethynyl-anthradithiophene (TES-ADT). A solvent-assisted polymer residue removal process was introduced to effectively remove residues or impurities on the graphene surface. Unlike vacuum-deposited small molecules, TES-ADT displayed a standing-up molecular assembly, which facilitates lateral charge transport, on both the residue-removed clean graphene and as-transferred graphene with polymer residues. However, TES-ADT films grown on the cleaned graphene showed a higher crystallinity and larger grain size than those on the as-transferred graphene. The resulting TES-ADT FETs using cleaned graphene source/drain electrodes therefore exhibited a superior device performance compared to devices using as-transferred graphene electrodes, with mobilities as high as 1.38 cm(2) V(-1) s(-1).</P>
HyperNEAT를 이용한 4족 보행 로봇의 이동 제어
장재영(Jaeyoung Jang),현수환(Soohwan Hyun),서기성(Kisung Seo) 한국지능시스템학회 2011 한국지능시스템학회논문지 Vol.21 No.1
4족 보행로봇은 보행 안정성이 높아서 향후 다양한 분야에 활용이 기대되며, 효율적인 보행을 위한 걸음새의 생성과 제어가 중요하다. 특히, 다양한 로봇 모델들에 대한 수요와 여러 가지 걸음 동작의 필요성으로 인하여 자동적인 걸음새 생성 기법이 요구된다. 본 논문에서는 HyperNEAT(Hypercube-based NeuroEvolution of Augmenting Topologies)를 사용하여 지형변화에 적응 가능한 4족 보행로봇의 걸음새를 생성하고, 바이올로이드로 구성된 4족 보행로봇에 대하여 ODE 기반의 Webots 시뮬레이션을 통해서 보행 실험을 수행하고 결과를 분석한다. The walking mobility with stability of 4 legged robots is the distinguished skills for many application areas. Planning gaits of efficient walking for quadruped robots is an important and challenging task. Especially, autonomous generation of locomotion is required to manage various robot models and environments. In this paper, we propose an adaptive locomotion control of 4 legged robot for irregular terrain using HyperNEAT. Generated locomotion is executed and analysed using ODE based Webots simulation for the 4 legged robot which is built by Bioloid.