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Pressure-induced Metal-insulator Transition of the Mott Insulator Ba2IrO4
Daisuke Orii,Masafumi Sakata,Atsushi Miyake,Katsuya Shimizu,Hirotaka Okabe,Masaaki Isobe,Eiji Takayama-Muromachi,Jun Akimitsu 한국물리학회 2013 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.63 No.3
The electrical resistivity of single crystals of the spin-orbit Mott insulator Ba2IrO4 has beenmeasured at pressures up to 30 GPa and at temperatures from 100 mK to 300 K. Ba2IrO4 showsa metal-insulator transition at around Pc = 24 GPa, though it does not show superconductivitydown to 100 mK. The low-temperature resistivity in the metallic state does not obey a conventionalFermi-liquid description. This suggests that carriers are incoherently scattered by antiferromagneticquantum spin fluctuations. The critical exponent for the metal-insulator transition is about 1.6,indicating that Ba2IrO4 is located near the boundary between a Mott and an Anderson insulator. This means that even in a single crystal, the effect of crystallographic disorder should not be ignored.