자기세정을 위한 스퍼터링 TiO2 박막의 산소 표면처리에 따른 특성

박용섭,김남훈 한국전기전자재료학회 2016 전기전자재료학회논문지 Vol.29 No.5

Titanium oxide (TiO2) thin films were fabricated by unbalanced magnetron (UBM) sputtering. The fabricated TiO2 films were treated by oxygen plasma under various RF powers. We investigated the characteristics of oxygen plasma treatment on the surface, structural, and physical properties of TiO2 films prepared at various plasma treatment RF powers. UBM sputtered TiO2 films exhibited higher contact angle value, smooth surface, and amorphous structure. However, the rms surface roughness TiO2 films were rough, and the contact angle value was decreased with the increase of the plasma treatment RF power Also, the hardness value of TiO2 film as physical properties was slightly increased with the increase of the plasma treatment RF power. In the results, the performance of TiO2 films for self cleaning critically depended on the with the plasma treatment RF power. TiO2 박막은 비대칭 마그네트론 스퍼터링 장치에 의해 제작되었다. 제작되어진 TiO2 박막은 다양한 산소플라즈마 rf 파워에 따라 표면 처리되었다. 스퍼터링되어진 TiO2 박막은 다양한 산소플라즈마 조건에 의해 표면 처리되었으며, 표면 처리되어진 박막들의 표면 특성, 구조, 물리적 특성 등을 고찰하였다. 비대칭 마그네트론 스퍼터링되어진 TiO2 박막은 높은 접촉각 값을 나타내었고, 부드러운 표면, 그리고 비정질 구조 특성을 나타내었다. 그러나 스퍼터링되어진 TiO2 박막은 산소플라즈마 rf 파워가 증가함에 따라 rms 표면 거칠기 값은 감소하였고, 물리적 특성인 박막의 경도 값은 산소플라즈마 rf 파워의 증가에 따라 약간 증가하였다. 결과적으로 TiO2 박막의 자기세정 특성은 표면처리를 위한 산소 플라즈마 rf 파워에 의존한다.

UBM 마그네트론 스퍼터 시스템을 이용한 구리 타겟의 이온전류밀도 향상 연구

강충현(Chunghyeon Kang),주정훈(Junghoon Joo) 한국표면공학회 2017 한국표면공학회지 Vol.50 No.3

A 6-way-cross consisting of a 2.75-inch CF flange was used as a main chamber on a PFEIFFER VACUUM TMP station based on a 67 l / sec turbo molecular pump and a diaphragm pump to produce a magnet array with a volume ratio of 5.5: 1.A 1-inch diameter copper target and graphite target were fabricated using MDX-1.5K from Advanced Energy Industries, Inc as a DC power supply. Ion current density of copper target and graphite target was measured by unbalanced magnetron sputtering. The basic pressure condition was 6.3 × 10<SUP>-7</SUP> mbar and the process pressure was Ar 50 sccm at 1.0 × 10<SUP>-2</SUP> mbar (7.5 mTorr) in the Ar atmosphere. Therefore, the relative density of copper ions reaching the substrate with the measured ion current density was derived.

자기세정을 위한 스퍼터링 TiO₂ 박막의 산소 표면처리에 따른 특성

김남훈,박용섭,Kim, Nam-Hoon,Park, Yong Seob 한국전기전자재료학회 2016 전기전자재료학회논문지 Vol.29 No.5

Titanium oxide ($TiO_2$) thin films were fabricated by unbalanced magnetron (UBM) sputtering. The fabricated $TiO_2$ films were treated by oxygen plasma under various RF powers. We investigated the characteristics of oxygen plasma treatment on the surface, structural, and physical properties of $TiO_2$ films prepared at various plasma treatment RF powers. UBM sputtered $TiO_2$ films exhibited higher contact angle value, smooth surface, and amorphous structure. However, the rms surface roughness $TiO_2$ films were rough, and the contact angle value was decreased with the increase of the plasma treatment RF power Also, the hardness value of $TiO_2$ film as physical properties was slightly increased with the increase of the plasma treatment RF power. In the results, the performance of $TiO_2$ films for self cleaning critically depended on the with the plasma treatment RF power.

Effect of balanced and unbalanced magnetron sputtering processes on the properties of SnO2 thin films

Gauri Shanker,P. Prathap,K.M.K. Srivatsa,Preetam Singh 한국물리학회 2019 Current Applied Physics Vol.19 No.6

A comparative study has been carried on the role of balanced magnetron (BM) and unbalanced magnetron (UBM) sputtering processes on the properties of SnO2 thin films. The oxygen partial pressure, substrate temperature and deposition pressure were kept 20%, 700 °C and 30 mTorr, respectively and the applied RF power varied in the range of 150–250 W. It is observed that the UBM deposition causes significant effect on the structural, electrical and optical properties of SnO2 thin films than BM as evidenced by X-ray diffraction, C-V, Spectroscopic Ellipsometer and Photoluminescence measurements. The value of band gap (Eg) of the films deposited at 150W in UBM is found as Eg=3.83 eV which is much higher than the value of Eg=3.69 eV as observed in BM sputtering indicating that UBM sputtering results in good crystalline quality. Further, the C-V measurements of SnO2 thin films deposited using UBM at high power 250W show hysteresis with large flat band shift indicating that these thin films can be used for the fabrication of memory device. The observed results have been attributed to different mechanisms which exist simultaneously under unbalanced magnetron sputtering due to ion bombardment of growing SnO2 thin film by energetic Ar+ ions.

디스플레이 확산 방지층 응용을 위한 비대칭 마그네트론 스퍼터로 증착된 질화 티타늄 박막의 특성에 대한 연구

박용섭 한국전기전자재료학회 2019 전기전자재료학회논문지 Vol.32 No.2

TiN thin films were fabricated using an unbalanced magnetron sputtering (UBMS) system, and their structureand surface characteristics as well as their optical and tribological properties were evaluated. The hardness, elasticmodulus, adhesive force, surface roughness, and transmittance of the Ti thin films fabricated using the UBMS systemwere 11.5 GPa, 103 GPa, 27.5 N, 2.45 nm and 20%, respectively. The TiN films prepared with various proportions ofnitrogen as the reaction gas exhibited maximum values for the hardness, elastic modulus, critical load, RMS roughnessand transmittance of approximately 19.2 GPa, 182 GPa, 27.3 N, 0.98 nm, and 85%, respectively. Moreover, the TiN thinfilm fabricated under the condition of 30 sccm nitrogen gas showed the optimal physical properties. In summary, theTiN thin films fabricated using the UBMS system exhibited excellent hardness, elastic modulus, adhesion, and smoothsurface in addition to good hydrophilic properties. 비대칭 마그네트론 스퍼터링 장치를 이용하여 TiN 박막을 제작하고, 구조, 표면, 광학적, 트라이볼로지 특성들을 평가하였다. 비대칭 마그네트론 스퍼터링 장치로 제작한 Ti 박막의 경우 경도, 탄성계수, 접착력, 표면거칠기, 투과도 값은 각각 11.5 GPa, 103 GPa, 27.5 N, 2.45 nm, 20%의 값을 나타내었다. 반응가스로써 질소를 증가시켜 제작한 TiN 박막의 경우 각각의 19.2 GPa의 경도와 182 GPa의 탄성계수 27.3 N의 접착력, 0.98 nm의 표면거칠기 값을 보이며, 85%의 높은 투과도를 나타내었으며, 30sccm 질소 가스량에서 증착되어진 TiN 박막이 가장 우수한 물리적 특성들을 나타내었다. 비대칭 마그네트론 스퍼터링 장치로 제작한 TiN 박막은 우수한 경도와 탄성계수, 접착력과 부드러운 표면을 나타내었으며, 친수특성을 포함하였다.

마그네트론 스퍼터링법으로 증착시킨 TiC 박막의 물리적, 전기적 특성에서 RF 파워의 영향

김남훈,박용섭,Kim, Nam-Hoon,Park, Yong Seob 한국전기전자재료학회 2014 전기전자재료학회논문지 Vol.27 No.7

TiC thin films were deposited on Si wafer by unbalanced magnetron sputtering (UBMS) system with two targets of graphite and titanium. During the TiC sputtering, the RF power was varied from 100 W to 175 W and the physical and electrical properties of TiC films were investigated. The hardness and rms surface roughness of TiC films were improved with increasing RF power and the maximum hardness about 24 GPa and the minimum rms surface roughness about 1.2 nm were obtained. The resistivity of TiC films was decreased with increasing RF power. Consequently, the physical and electrical properties of TiC film wewe improved with increasing RF power.

스퍼터링 Mo 도핑 탄소박막의 특성과 유기박막트랜지스터의 게이트 전극으로 응용

김영곤,박용섭,Kim, Young Gon,Park, Yong Seob 한국전기전자재료학회 2017 전기전자재료학회논문지 Vol.30 No.1

Mo doped carbon (C:Mo) thin films were fabricated with various Mo target power densities by unbalanced magnetron sputtering (UBM). The effects of target power density on the surface, structural, and electrical properties of C:Mo films were investigated. UBM sputtered C:Mo thin films exhibited smooth and uniform surfaces. However, the rms surface roughness of C:Mo films were increased with the increase of target power density. Also, the resistivity value of C:Mo film as electrical properties was decreased with the increase of target power density. From the performance of organic thin filml transistor using conductive C:Mo gate electrode, the carrier mobility, threshold voltage, and on/off ratio of drain current (Ion/Ioff) showed $0.16cm^2/V{\cdot}s$, -6.0 V, and $7.7{\times}10^4$, respectively.

유기박막트랜지스터 응용을 위한 탄소가 도핑된 몰리브덴 박막의 특성

김동현,박용섭,Dong Hyun Kim,Yong Seob Park 한국전기전자재료학회 2023 전기전자재료학회논문지 Vol.36 No.6

The advantage of OTFT technology is that large-area circuits can be manufactured on flexible substrates using a low-cost solution process such as inkjet printing. Compared to silicon-based inorganic semiconductor processes, the process temperature is lower and the process time is shorter, so it can be widely applied to fields that do not require high electron mobility. Materials that have utility as electrode materials include carbon that can be solution-processed, transparent carbon thin films, and metallic nanoparticles, etc. are being studied. Recently, a technology has been developed to facilitate charge injection by coating the surface of the Al electrode with solution-processable titanium oxide (TiOx), which can greatly improve the performance of OTFT. In order to commercialize OTFT technology, an appropriate method is to use a complementary circuit with excellent reliability and stability. For this, insulators and channel semiconductors using organic materials must have stability in the air. In this study, carbon-doped Mo (MoC) thin films were fabricated with different graphite target power densities via unbalanced magnetron sputtering (UBM). The influence of graphite target power density on the structural, surface area, physical, and electrical properties of MoC films was investigated. MoC thin films deposited by the unbalanced magnetron sputtering method exhibited a smooth and uniform surface. However, as the graphite target power density increased, the rms surface roughness of the MoC film increased, and the hardness and elastic modulus of the MoC thin film increased. Additionally, as the graphite target power density increased, the resistivity value of the MoC film increased. In the performance of an organic thin film transistor using a MoC gate electrode, the carrier mobility, threshold voltage, and drain current on/off ratio (I_on/I_off) showed 0.15 cm²/V·s, -5.6 V, and 7.5×10⁴, respectively.

생체 적합 소재 응용을 위한 비대칭 마그네트론 스퍼터링으로 제작된 Ni 도핑된 탄소 박막의 제조 및 특성

김광택,박용섭 한국전기전자재료학회 2018 전기전자재료학회논문지 Vol.31 No.1

Various Ni-doped carbon (C:Ni) thin films were fabricated using different Ni target power densities byunbalanced magnetron sputtering (UBM). The effects of target power density on the structural, physical, surface, andelectrical properties of C:Ni films were investigated. The UBM C:Ni thin films exhibited uniformly smooth surfaces. The rms surface roughness and friction coefficient values of the C:Ni films decreased with the increase in target powerdensity. The physical properties of the films such as hardness and elastic moduli increased while their electricalproperties such as resistivity decreased with the increase in the target power density. These results show that an increaseof the power density leads to an increase in the proportion of Ni and nanocrystallization of the amorphous carbon film;this contributes to the changes observed in the physical and electrical characteristics. 본 논문에서는 비대칭 마그네트론 스퍼터링법으로 Ni 타겟 전력 밀도에 따라 증착시킨 Ni 도핑 탄소(C:Ni) 박막의 표면, 구조, 전기적 특성등을 고찰하였다. 비대칭 스퍼터링 장치로 증착한 C:Ni 박막은 균일하고 결함이 없이 증착되었으며, Ni 타겟 전력 밀도 증가에 따라 표면거칠기와 마찰계수 값은 감소하였다. C:Ni 박막의 경도와 탄성계수 값은 전력밀도에 따라 증가하였고 박막의 비저항 값은 타겟 전력 밀도 증가에 따라 감소하였다. 이러한 결과는 전력밀도 증가는 비정질 탄소 박막에 금속인 Ni의 비율이 증가시키고, 박막의 나노결정화를 향상시켜 박막의 구조적, 물리적, 전기적 특성 변화에 기여했다.

유기박막트랜지스터 응용을 위한 탄소가 도핑된 몰리브덴 박막의 특성

김동현,박용섭 한국전기전자재료학회 2023 전기전자재료학회논문지 Vol.36 No.6

The advantage of OTFT technology is that large-area circuits can be manufactured on flexible substrates using a lowcost solution process such as inkjet printing. Compared to silicon-based inorganic semiconductor processes, the process temperature is lower and the process time is shorter, so it can be widely applied to fields that do not require high electron mobility. Materials that have utility as electrode materials include carbon that can be solution-processed, transparent carbon thin films, and metallic nanoparticles, etc. are being studied. Recently, a technology has been developed to facilitate charge injection by coating the surface of the Al electrode with solution-processable titanium oxide (TiOx), which can greatly improve the performance of OTFT. In order to commercialize OTFT technology, an appropriate method is to use a complementary circuit with excellent reliability and stability. For this, insulators and channel semiconductors using organic materials must have stability in the air. In this study, carbon-doped Mo (MoC) thin films were fabricated with different graphite target power densities via unbalanced magnetron sputtering (UBM). The influence of graphite target power density on the structural, surface area, physical, and electrical properties of MoC films was investigated. MoC thin films deposited by the unbalanced magnetron sputtering method exhibited a smooth and uniform surface. However, as the graphite target power density increased, the rms surface roughness of the MoC film increased, and the hardness and elastic modulus of the MoC thin film increased. Additionally, as the graphite target power density increased, the resistivity value of the MoC film increased. In the performance of an organic thin film transistor using a MoC gate electrode, the carrier mobility, threshold voltage, and drain current on/off ratio (Ion/Ioff) showed 0.15 cm2/V·s, -5.6 V, and 7.5×104, respectively.