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Lee, Ho Wook,Kim, Daejong,Lee, Hyeon-Geun,Kim, Weon-Ju,Yoon, Soon Gil,Park, Ji Yeon The Korean Ceramic Society 2019 한국세라믹학회지 Vol.56 No.5
To reduce residual pores of composites and obtain a dense matrix, SiC<sub>f</sub>/SiC composites were fabricated by chemical vapor deposition (CVI) using SiC nanorods. SiC nanorods were uniformly grown in the thickness direction of the composite preform when the reaction pressure was maintained at 50 torr or 100 torr at 1,100℃. When SiC nanorods were grown, the densities of the composites were 2.57 ~ 2.65 g/㎤, higher than that of the composite density of 2.47 g/㎤ for non-growing of SiC nanorods under the same conditions; grown nanorods had uniform microstructure with reduced large pores between bundles. The flexural strength, fracture toughness and thermal conductivity (room temperature) of the SiC nanorod grown composites were 412 ~ 432 MPa, 13.79 ~ 14.94 MPa·m<sup>1/2</sup> and 11.51 ~11.89 W/m·K, which were increases of 30%, 25%, and 25% compared to the untreated composite, respectively.
노대호,김재수,변동진,양재웅,김나리,Rho, Dae-Ho,Kim, Jae-Soo,Byun, Dong-Jin,Yang, Jae-Woong,Kim, Na-Ri 한국재료학회 2003 한국재료학회지 Vol.13 No.6
SiC nanorods have been grown on Si (100) substrate directly. Tetramethylsilane and Ni were used for SiC nanorod growth. After 3minute, SiC nanorod had grown by CVD. Growth regions ware divided by two regions with diameter. The First region consisted of thin SiC nanorods having below 10 nm diameter, but second region's diameter was 10∼50 nm. This appearance shows by reduction of growth rate. The effect of temperature and growth time was investigated by scanning electron microscopy. Growth temperature and time affected nanorod's diameter and morphology. With increasing growth time, nanorod's diameter increased because of the deactivation effect. But growth temperatures affected little. By TEM characterization, grown SiC nanorods consisted of the polycrystalline grain.
노대호,김재수,변동진,양재웅,김나리 대한금속재료학회 2003 대한금속·재료학회지 Vol.41 No.9
SiC nanorod has been synthesized directly on Si using CVD method. Ni was used for liquid catalyst during growth, and HMDS was used for source materials. Growth temperature and time effected grown nanorod’s diameter by growth rate. Deactivation was occurred at high source gas concentration. From the cross-sectional SEM image, SiC nanorod growth was divided two regions because of lateral VS growth effect. SiC nanorod was grown with uniaxial direction and highly crystalline phase.