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김흥배(Heung-Bae Kim),Gerhard Hobler Korean Society for Precision Engineering 2007 한국정밀공학회지 Vol.24 No.10
Focused ion beams are a potential tool for micro/nano structure fabrication while several problems still have to be overcome. Redeposition of sputtered atoms limits the accurate fabrication of micro/nano structures. The challenge lies in accurately controlling the focused ion beam to fabricate various arbitrary curved shapes. In this paper a basic approach for the focused ion beam induced direct fabricate of fundamental features is presented. This approach is based on the topography simulation which naturally considers the redeposition of sputtered atoms and sputtered yield changes. Fundamental features such as trapezoidal, circular and triangular were fabricated with this approach using single or multiple pass box milling. The beam diameter(FWHM) and maximum current density are 68 ㎚ and 0.8 A/㎠, respectively. The experimental investigations show that the fabricated shape is well suited for the pre-designed fundamental features. The characteristics of ion beam induced direct fabrication and shape formation will be discussed.
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이온빔 몬테 카를로 시물레이션 프로그램 개발 및 집속 이온빔 공정 해석
김흥배(Heung-Bae Kim) Korean Society for Precision Engineering 2012 한국정밀공학회지 Vol.29 No.4
Two of fundamental approaches that can be used to understand ion-solid interaction are Monte Carlo (MC) and Molecular Dynamic (MD) simulations. For the simplicity of simulation Monte Carlo simulation method is widely preferred. In this paper, basic consideration and algorithm of Monte Carlo simulation will be presented as well as simulation results. Sputtering caused by incident ion beam will be discussed with distribution of sputtered particles and their energy distributions. Redeposition of sputtered particles that are experienced refraction at the substrate-vacuum interface additionally presented. In addition, reflection of incident ions with reflection coefficient will be presented together with spatial and energy distributions. This Monte Carlo simulation will be useful in simulating and describing ion beam related processes such as Ion beam induced deposition/etching process, local nano-scale distribution of focused ion beam implanted ions, and ion microscope imaging process etc.
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다구찌 기법을 이용한 FIB-Sputtering 가공 특성 분석
이석우(Seok-Woo Lee),최병열(Byoung-Yeol Choi),강은구(Eun-Goo Kang),홍원표(Won-Pyo Hong),최헌종(Hon-Zong Choi) 한국생산제조학회 2006 한국생산제조학회지 Vol.15 No.6
The application of focused ion beam (FIB) technology in micro/nano machining has become increasingly popular. Its usage in micro/nano machining has advantages over contemporary photolithography or other micro/nano machining technologies such as small feature resolution, the ability to process without masks and being accommodating for a variety of materials and geometries. The target of this paper is the analysis of FIB sputtering process according to tilt angle, dwell time and overlap for application of 3D micro and pattern fabrication and to find the effective beam scanning conditions using Taguchi method. Therefore we make the conclusions that tilt angle is dominant parameter for sputtering yield. Burr size is reduced as tilt angle is higher.
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