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기형선(Hyungson Ki),Huayu Li 대한기계학회 2010 대한기계학회 춘추학술대회 Vol.2010 No.11
In this work, ultrashort pulse laser ablation is studied theoretically and computationally in order to understand why and how precision microfabrication is possible with this class of lasers. From the study of vaporization processes, the authors have learned that the nonthermal mode of ablation needs to be initiated at typical intensity values of picosecond lasers. In addition to this result, the ablation mechanism for femtosecond lasers is briefly discussed.
김규만(Gyu Man Kim),유르겐 부르거(Juergen Brugger) Korean Society for Precision Engineering 2004 한국정밀공학회지 Vol.21 No.8
A new tool of surface patterning technique for general purpose lithography was developed based on shadow mask method. This paper describes the fabrication of a new type of miniaturized shadow mask. The shadow mask is fabricated by photolithography and etching of 100-㎜ full wafer. The fabricated shadow mask has over 388 membranes with apertures of micrometer length scale ranging from 1 ㎛ to 100s ㎛ made on each 2㎜×2㎜ large low stress silicon nitride membrane. It allows micro scale patterns to be directly deposited on substrate surface through apertures of the membrane. This shadow mask method has much wider choice of deposit materials, and can be applied to wider class of surfaces including chemical functional layer, MEMS/NEMS surfaces, and biosensors.
이온빔 몬테 카를로 시물레이션 프로그램 개발 및 집속 이온빔 공정 해석
김흥배(Heung-Bae Kim) Korean Society for Precision Engineering 2012 한국정밀공학회지 Vol.29 No.4
Two of fundamental approaches that can be used to understand ion-solid interaction are Monte Carlo (MC) and Molecular Dynamic (MD) simulations. For the simplicity of simulation Monte Carlo simulation method is widely preferred. In this paper, basic consideration and algorithm of Monte Carlo simulation will be presented as well as simulation results. Sputtering caused by incident ion beam will be discussed with distribution of sputtered particles and their energy distributions. Redeposition of sputtered particles that are experienced refraction at the substrate-vacuum interface additionally presented. In addition, reflection of incident ions with reflection coefficient will be presented together with spatial and energy distributions. This Monte Carlo simulation will be useful in simulating and describing ion beam related processes such as Ion beam induced deposition/etching process, local nano-scale distribution of focused ion beam implanted ions, and ion microscope imaging process etc.