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- 주제어 : Graphene/MoS2 heterostructure (검색결과 4 건)
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Low-temperature wafer-scale growth of MoS<sub>2</sub>-graphene heterostructures
Kim, Hyeong-U,Kim, Mansu,Jin, Yinhua,Hyeon, Yuhwan,Kim, Ki Seok,An, Byeong-Seon,Yang, Cheol-Woong,Kanade, Vinit,Moon, Ji-Yun,Yeom, Geun Yong,Whang, Dongmok,Lee, Jae-Hyun,Kim, Taesung Elsevier 2019 APPLIED SURFACE SCIENCE - Vol.470 No.-
<P><B>Abstract</B></P> <P>In this study, we successfully demonstrate the fabrication of a MoS<SUB>2</SUB>-graphene heterostructure (MGH) on a 4 inch wafer at 300 °C by depositing a thin Mo film seed layer on graphene followed by sulfurization using H<SUB>2</SUB>S plasma. By utilizing Raman spectroscopy and high-resolution transmission electron microscopy, we have confirmed that 5–6 MoS<SUB>2</SUB> layers with a large density of sulfur vacancies are grown uniformly on the entire substrate. The chemical composition of MoS<SUB>2</SUB> on graphene was evaluated by X-ray photoelectron spectroscopy, which confirmed the atomic ratio of Mo to S to be 1:1.78, which is much lower than the stoichiometric value of 2 from standard MoS<SUB>2</SUB>. To exploit the properties of the nanocrystalline and defective MGH film obtained in our process, we have utilized it as a catalyst for hydrodesulfurization and as an electrocatalyst for the hydrogen evolution reaction. Compared to MoS<SUB>2</SUB> grown on an amorphous SiO<SUB>2</SUB> substrate, the MGH has smaller onset potential and Tafel slope, indicating its enhanced catalytic performance. Our practical growth approach can be applied to other two-dimensional crystals, which are potentially used in a wide range of applications such as electronic devices and catalysis.</P> <P><B>Highlight</B></P> <P> <UL> <LI> Practical growth for 2D MoS<SUB>2</SUB>-graphene heterostructure (MGH) was introduced. </LI> <LI> Low-temperature sulfurization of Mo thin film was realized by H<SUB>2</SUB>S plasma. </LI> <LI> As-grown MoS<SUB>2</SUB> film on graphene naturally contains large number of active sites. </LI> <LI> The MGH was shown enhanced electrocatalytic performance. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
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Shi Jiakuo,Chen Li,Yang Maoyou,Mi Zhishan,Zhang Mingjian,Gao Kefu,Zhang Duo,Su Shuo,Hou Weimin 한국물리학회 2022 Current Applied Physics Vol.39 No.-
Based to the first-principles calculations, we study the electronic properties of graphene/MoS2 heterostructure by modulating the vertical strains and applying external electric field. Graphene/MoS2 heterostructure is a van der Waals heterostructure (vdWH) with the interlayer spacing is 3.2 Å for the equilibrium state, and the contact property of the interface is n-type Schottky contact. The Schottky barrier height (SBH) changes with vertical strains which induces a change of charge transfer between graphene and MoS2 layer. In addition, with strain or without strain, the applied positive electric field can effectively promote the charge transfer from graphene to MoS2, while the negative electric field has the opposite effect. These findings support for the design of field effect transistors based on graphene vdWHs.
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Kim, Youngjun,Choi, Daeguen,Woo, Whang Je,Lee, Jae Bok,Ryu, Gyeong Hee,Lim, Jun Hyung,Lee, Sunhee,Lee, Zonghoon,Im, Seongil,Ahn, Jong-Hyun,Kim, Woo-Hee,Park, Jusang,Kim, Hyungjun Elsevier BV * North-Holland 2019 Applied Surface Science Vol.494 No.-
<P><B>Abstract</B></P> <P>The effective synthesis of two-dimensional (2D) heterostructures is essential for their use in electronic devices. In this study, by using atomic layer deposition (ALD), 2D transition metal dichalcogenide (TMD) heterostructures were grown by a halide precursor. This study shows the growth characteristics of the fluoride precursor compared to the chloride precursor used for the synthesis of the TMD on the graphene layer and the other TMD layer. Additionally, a carbonyl precursor was used for comparison with the halide precursor in terms of the thermal stability. From these experiments, the fluoride precursor was adequate for synthesizing on the graphene, however, was inappropriate for the TMD/TMD heterostructure because of its etching characteristic. Meanwhile, the chloride precursor was appropriate for the TMD/TMD heterostructure, even for a low binding energy with the substrate, but was inadequate in forming the TMD/graphene heterostructure, even if the ALD cycle increased. Through our experiments, we show, for the first time, that there exists a suitable halide precursor for a 2D layer for a substrate.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Synthesis of two-dimensional MoS<SUB>2</SUB> synthesized by MoF<SUB>6</SUB> precursor using atomic layer deposition </LI> <LI> MoF<SUB>6</SUB> is suitable for MoS<SUB>2</SUB>/graphene heterostructure </LI> <LI> Chloride precursor is suitable for transition metal dichalcogenide based heterostructure </LI> <LI> Different precursors are suitable depending on the substrate when forming the heterostructure in the atomic layer deposition </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
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Nayereh Ghobadi 한국물리학회 2017 Current Applied Physics Vol.17 No.11
In this paper molecular dynamic simulation is used to examine the mechanical properties of multilayer molybdenum disulfide (MoS2) and graphene/MoS2 heterostructure under uniaxial tensile and normal compressive strain. The effects of temperature, layer number and stacking order of layers on the stressstrain curve and elastic properties are studied. We find that the Young's modulus and vertical elastic constant of the heterostructure are much larger than that of MoS2 which is due to the higher stiffness and Young's modulus of graphene compared to MoS2. Furthermore, the results reveal that graphene/ MoS2 heterostructure is more resistant to the variation of temperature. While the rise in temperature results in the decrease of elastic constants, fracture strain and fracture stress of both structures, the increase in the number of layers only affects the elastic properties of heterostructure and has little influence on the stiffness of multilayer MoS2. Our simulations also illustrate that the highest energy stacking orders, AA3 and AB3, wherein S atoms of top layer are located above the S atoms of bottom layer, have the lowest elastic constants among all structures.
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