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- 저자 : Zhishan Li (검색결과 3 건)
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Cao Zhishan,Cao Jinjun,Vlasenko Volodymyr,Wang Xinfa,Li Weihai 한국응용곤충학회 2022 Journal of Asia-Pacific Entomology Vol.25 No.2
Beauveria bassiana is an entomopathogenic fungus with wide host range and is an important biocontrol agent against the oriental fruit moth Grapholitha molesta (Busck) (Lepidoptera: Tortricidae), a key pest of tree fruits worldwide. However, the molecular mechanisms involved in the interactions between G. molesta and B. bassiana is poorly understood. Herein, high throughput sequencing technology, the Illumina RNA-seq platform was used to analyze the transcriptome of G. molesta larvae induced by B. bassiana. De novo assembly generated 48,980 unigenes and the mean length is 1,226 nt. All of the unigenes were searched against Nt, Nr, GO, KOG databases, and 23,825 (46.64%) unigenes have been annotated in at least one database. Pairwise comparisons resulted in 1,755 differentially expressed genes (DEGs), with 965 up-regulated and 790 down-regulated. We further explored differentially expressed genes that are related to the infection of B. bassiana to G. molesta, especially the up-regulated ones. The potential immune-related genes were identified based on sequence similarity to homologs known to participate in immune response, and their expression was further verified by qRT-PCR. This is the first study on the molecular mechanism of entomopathogenic fungi-G. molesta interactions. The obtained data also provide insights for better understanding the molecular mechanisms of innate immune responses in G. molesta larvae against B. bassiana.
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Shi Jiakuo,Chen Li,Yang Maoyou,Mi Zhishan,Zhang Mingjian,Gao Kefu,Zhang Duo,Su Shuo,Hou Weimin 한국물리학회 2022 Current Applied Physics Vol.39 No.-
Based to the first-principles calculations, we study the electronic properties of graphene/MoS2 heterostructure by modulating the vertical strains and applying external electric field. Graphene/MoS2 heterostructure is a van der Waals heterostructure (vdWH) with the interlayer spacing is 3.2 Å for the equilibrium state, and the contact property of the interface is n-type Schottky contact. The Schottky barrier height (SBH) changes with vertical strains which induces a change of charge transfer between graphene and MoS2 layer. In addition, with strain or without strain, the applied positive electric field can effectively promote the charge transfer from graphene to MoS2, while the negative electric field has the opposite effect. These findings support for the design of field effect transistors based on graphene vdWHs.
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Parameter optimization of five-axis polishing using abrasive belt flap wheel for blisk blade
Junfeng Zhang,Yaoyao Shi,Xiaojun Lin,Zhishan Li 대한기계학회 2017 JOURNAL OF MECHANICAL SCIENCE AND TECHNOLOGY Vol.31 No.10
Considering the weak rigidity of blisk blades and the limited accessibility of blisk tunnels, polishing blisk blades is difficult when using tools with poor flexibility and large dimension. Hence, to reduce the surface roughness (SR) of a blisk blade, five-axis polishing method with abrasive belt flap wheel (ABFW) is employed to polish the blisk blade based on the analysis of the blisk structure and advantages of ABFW polishing. Polishing experiments based on central composite design are performed using ABFW. Response surface method (RSM) is employed to establish a predictive model between SR and various parameters, including ABFW size, contact force, spindle speed, and feed rate. Analysis of variance is then performed to evaluate the proposed model. The degree of influence of each factor on SR after polishing using ABFW is determined by plotting main effects. The interactions of polishing factors on SR are analyzed by RSM. Optimal parameters are obtained by response surface optimization. Finally, an experiment on blisk blade polishing using ABFW on a five-axis polishing machine is carried out for confirmation. Results indicate that the surface quality of the blisk blade after polishing is significantly improved, with SR being less than 0.4 μm.
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