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Jianqiao Liu,Zhaoxia Zhai,Guohua Jin,Yuan Li,Faheema Fairuj Monica,Xuesong Liu 대한금속·재료학회 2015 ELECTRONIC MATERIALS LETTERS Vol.11 No.1
The model of gradient-distributed oxygen vacancies is utilized in simulatingthe grain size effects of gas-sensitive SnO2 thin films. The distribution profileof oxygen vacancies has a grain size effect and the profile gradient correlatespositively with the radius of the grains. The simulation results show that thegrain size is a fundamental factor dominating the gas-sensing properties ofthin films. The potential barrier height and resistivity have significant grainsize effects when m is between 0.1 and 0.5 nm−1. The size effects on sensorresponse to stimulant gases can be enhanced by increasing the value of m orthe absolute value of α. Two expressions are used to simulate the grain sizeeffect of the sensor response. The expressions act similarly when α < 0.2. The simplified response provides a neat function to quantitatively explain thesensor performance on gases with low partial pressure. Although the accurate response is complicated, it is applicable to theentire concentration range. A small power-law exponent n is calculated from the accurate response expression when a high gasconcentration is employed, illustrating a “saturation effect” of the response.
Jianqiao Liu,Guohua Jin,Zhaoxia Zhai,Faheema Fairuj Monica,Xuesong Liu 대한금속·재료학회 2015 ELECTRONIC MATERIALS LETTERS Vol.11 No.3
The grain size effects on tin oxide gas-sensitive elements are numerically described by the model of gradient-distributed oxygen vacancies, which extends the receptor function of semiconductors to the condition of inhomogeneous donor density in grains. The sensor resistance and the response to the reducing gas are formulated as functions of the grain size and the depletion layer width. The simulations show good agreement with the experimental results. The depletion layer width is estimated as 4 nm for the undoped SnO2 element, whereas the values are 2 and 7 nm for Sb-doped and Al-doped samples, respectively. The results are experimentally verified by the donor-doped SnO2 thin films, the depletion layer widths of which are evaluated on the basis of the correlation between the electrical resistance and the Sb-doping amount. The location of the Fermi level is found to be a crucial factor that dominates the evaluation results.
Xianlu Zeng,Xuefang Pan,Zhaoxia Song,Lei Zhai,Xiaoyun Li 한국분자세포생물학회 2005 Molecules and cells Vol.20 No.2
INI1/hSNF5/BAF47 is a core component of the hSWI/ SNF ATP-dependent chromatin remodeling complex,and it has been implicated in regulating gene expression, cell division and tumorigenesis. We investigated whether INI1/hSNF5/BAF47 functions in activation of the colony stimulating factor 1 (CSF1) promoter in HeLa cells. Overexpression of INI1/hSNF5/BAF47 promoted CSF1 transcription, and siRNA targeting INI1/hSNF5/ BAF47 (siINI1) strongly inhibited the activity of the CSF1 promoter. We demonstrated that all conserved domains of INI1/hSNF5/BAF47 are needed for CSF1 transcription. ChIP experiment showed that INI1/ hSNF5/BAF47 is recruited to the region of the CSF1 promoter. Taken together, these results indicate that INI1/hSNF5/BAF47 is involved in activation of the CSF1 promoter
An exchange bias observed in Tb/Cr/FeCo trilayers with ultrathin Cr layer at low temperature
Sun Li,Li Xiaoyan,Zhang Yiwei,Song Hengbo,Zhang Wen,Kou Zhaoxia,Zhang Dong,Liu Xiaoying,Fei Hongyang,Pan Mengmei,Zhao Zhibin,Zhai Ya 한국물리학회 2022 Current Applied Physics Vol.44 No.-
Positive exchange bias field (He) is observed in Tb/Cr (tCr)/FeCo trilayers at 5 K without cooling field, and negative He for Tb/FeCo bilayer. The negative He of Tb/FeCo implies the FM coupling at the interface due to Co and Fe dominate in the magnetization of the ferrimagnetic interlayer alloy of FeCo and Tb. With the inserting of Cr layer, this situation is broken, and the positive He implies the antiferromagnetic interlayer coupling. A peak of He = 6.0 mT for trilayers with tCr = 1.5 nm is corresponding to the minimum value of coercivity as a function of tCr at 5 K, which is used to study the effect of the cooling field (Hfc) on He as a function of temperature. It is found that Hfc of 100 mT triggers He from positive to negative at T ≤ 15 K. The magnetoresistance results also confirm the coexistence of multiple MR mechanisms in these trilayers.