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Yeoh, Yun-Young,Jang, Hyejin,Yoo, Han-Ill The Royal Society of Chemistry 2012 Physical chemistry chemical physics Vol.14 No.5
<P>Defect structures of BaTiO<SUB>3</SUB> and the like co-doped with variable-valence acceptors and donors are not clear particularly in transition from acceptor domination to donor domination with increasing oxygen activity. We have, thus, examined the electrical conductivity and thermoelectric power of BaTiO<SUB>3</SUB> co-doped with a variable-valence acceptor <IMG SRC='http://www.rsc.org/ej/CP/2012/c2cp22711h/c2cp22711h-t1.gif'> and a fixed-valence donor <IMG SRC='http://www.rsc.org/ej/CP/2012/c2cp22711h/c2cp22711h-t2.gif'> in different co-doping ratios (<I>m</I><SUB>d</SUB>/<I>m</I><SUB>a</SUB>) as functions of oxygen activity in the range of −20 < log <I>a</I><SUB>O<SUB>2</SUB></SUB>≤ 0 at elevated temperatures of 900–1100 °C. Their systematic variations with <I>m</I><SUB>d</SUB>/<I>m</I><SUB>a</SUB> and log <I>a</I><SUB>O<SUB>2</SUB></SUB> are reported, and thereby defect structures of the co-doped BaTiO<SUB>3</SUB> depending on <I>m</I><SUB>d</SUB>/<I>m</I><SUB>a</SUB> are determined. It is found that for the co-doping ratio 1 < <I>m</I><SUB>d</SUB>/<I>m</I><SUB>a</SUB> < 2, the Fermi level is pinned at a few <I>kT</I>'s around the deep level of <IMG SRC='http://www.rsc.org/ej/CP/2012/c2cp22711h/c2cp22711h-t3.gif'> across the otherwise p-type semiconducting log <I>a</I><SUB>O<SUB>2</SUB></SUB>-region of Mn-singly doped BaTiO<SUB>3</SUB>, and attributed to deep acceptor–shallow donor mutual compensation <IMG SRC='http://www.rsc.org/ej/CP/2012/c2cp22711h/c2cp22711h-t4.gif'>, thus turning otherwise p-type semiconducting BaTiO<SUB>3</SUB> semi-insulating.</P> <P>Graphic Abstract</P><P>The Fermi level of BaTiO<SUB>3</SUB> is pinned by co-doping a fixed-valence donor (Y) and a variable valence acceptor (Mn) in the ratio <I>m</I><SUB>d</SUB>/<I>m</I><SUB>a</SUB> = 1.8 due to their mutual compensation. <IMG SRC='http://pubs.rsc.org/services/images/RSCpubs.ePlatform.Service.FreeContent.ImageService.svc/ImageService/image/GA?id=c2cp22711h'> </P>
Aflatoxin B1 과 Vitamin D3 급여가 Broiler 병아리의 증체 및 사료이용성에 미치는 영향
장윤환(Yun Hwan Chiang),여영수(Young Soo Yeoh) 한국축산학회 1989 한국축산학회지 Vol.31 No.4
This study was conducted to investigate the interaction of aflatoxin B₁ (AFB₁) and vitamin D₃ (VD₃) in broiler chicks. Three hundred thirty-six broiler chicks (Hubbard line) of equally mixed sex were allocated to triplicate 8(2x4 factorial) treatment groups. The 0 or 1 ppm of AFB₁ and 0, 500, 1000 or 1500 IU/㎏ of VD₃ were supplemented to the basal diet. Fourteen broilers of equally mixed sex were allocated to each replica and 24 groups were arranged in a randomized block design. After 3 weeks of feeding the body weight gain, feed intake, feed conversion, mortality, weak leg and runt chick were measured. 1. The body weight gain for 3 weeks presented no response to feeding AFB₁ except for slight decrease. However, that decreased according to the increasing level of VD₃ (p$lt; .01). 2. The feed intake also showed no response when fed I ppm AFB₁ except for slight increase. However, that decreased by feeding increasing level of VD₃ (P $lt; .01). 3. The feed conversion increased when fed 1 ppm AFB₁ (p $lt; .05), but no response to the amount of VD₃ in ration. 4. The motality, weak leg and runt chick were not affected by feeding AFB₁ and / or VD₃.
Cho, Keun Hwi,Suk, Sung Dae,Yeoh, Yun Young,Li, Ming,Yeo, Kyoung Hwan,Kim, Dong-Won,Park, Donggun,Lee, Won-Seong,Jung, Young Chai,Hong, Byung Hak,Hwang, Sung Woo IEEE 2007 IEEE electron device letters Vol.28 No.12
<P> The characteristics of cylindrical gate-all-around twin silicon nanowire field-effect transistors with a radius of 5 nm have been measured in temperatures <TEX>$T$</TEX> ranging from 4 to 300 K. The <TEX>$T$</TEX> dependence of the off-current suggests that thermal generation in the channel is the main leakage mechanism. The <TEX><TEX>$T$</TEX> </TEX> dependence of the subthreshold swing exhibits no body effects but shows degradations due to slight differences in the threshold voltages and in the body effect constants of the twin nanowires. The <TEX>$T$</TEX> dependence of the peak normalized transconductance <TEX>$g_{m}/V_{\rm DS}$</TEX> gives a clue of 1-D phonon scattering and suggests that surface roughness scattering at the nanowire wall is dominant at low <TEX>$T$</TEX> values. </P>
Rock-Hyun Baek,Chang-Ki Baek,Sung-Woo Jung,Yun Young Yeoh,Dong-Won Kim,Jeong-Soo Lee,Kim, D.M.,Yoon-Ha Jeong IEEE 2010 IEEE TRANSACTIONS ON NANOTECHNOLOGY Vol.9 No.2
<P>The series resistance, <I>R</I> <SUB>sd</SUB> in silicon nanowire FETs (Si-NWFET) is extracted unambiguously, using the <I>Y</I> -function technique, in conjunction with the drain current and transconductance data. The volume channel inversion in Si-NWFET renders the charge carriers relatively free of the surface scattering and concomitant degradation of mobility. As a result, the <I>Y</I> -function of Si-NWFET is shown to exhibit a linear behavior in strong inversion, thereby enabling accurate extraction of <I>R</I> <SUB>sd</SUB>. The technique is applied to nanowire devices with channel lengths 82, 86, 96, 106, 132, and 164 nm, respectively. The extracted <I>R</I> <SUB>sd</SUB> values are shown nearly flat with respect to the gate voltage, as expected from Ohmic contacts but showed a large variation for all channel lengths examined. This indicates the process parameters involved in the formation of series contacts vary considerably from device to device. The present method only requires a single device for extraction of <I>R</I> <SUB>sd</SUB> and the iteration procedure for data fitting is fast and stable.</P>
Rock-Hyun Baek,Chang-Ki Baek,Hyun-Sik Choi,Jeong-Soo Lee,Yun Young Yeoh,Kyoung Hwan Yeo,Dong-Won Kim,Kinam Kim,Kim, D M,Yoon-Ha Jeong IEEE 2011 IEEE TRANSACTIONS ON NANOTECHNOLOGY Vol.10 No.3
<P>In this paper, the volume trap densities <I>Nt</I> are extracted from gate-all-around silicone-nanowire FETs with different gate oxides, using a cylindrical-coordinate-based flicker noise model developed. For extracting <I>Nt</I>, the drain-current power spectral densities were measured from a large number of identical devices and averaged over, thereby mimicking the spatial distribution of trap sites inducing 1/<I>f</I> curve. Also, effective mobility and threshold voltage were simultaneously extracted with the series resistance to characterize the 1/<I>f</I> noise in terms of intrinsic values of these two channel parameters. The volume trap densities thus extracted from different oxides (in situ steam-generated oxide/rapid thermal oxide/nitride-gated oxide) are compared and further examined using hot-carrier stress data. Finally, radius dependence of the cylindrical 1/<I>f</I> model developed is discussed.</P>
<tex> $C$</tex>– <tex> $V$</tex> Characteristics in Undoped Gate-All-Around Nanowire FET Array
Rock-Hyun Baek,Chang-Ki Baek,Sang-Hyun Lee,Sung Dae Suk,Ming Li,Yun Young Yeoh,Kyoung Hwan Yeo,Dong-Won Kim,Jeong-Soo Lee,Kim, D M,Yoon-Ha Jeong IEEE 2011 IEEE electron device letters Vol.32 No.2
<P>Presented in this letter are the <I>C</I>-<I>V</I> data, measured from nanowire capacitors, which have been fabricated by connecting in parallel a large number of identically processed nanowire FETs. The <I>C</I>-<I>V</I> curves were examined over a range from accumulation to inversion with varying frequencies and at different electrode configurations. The gate response of the undoped and floating channel is investigated using <I>C</I>-<I>V</I> data, and the inversion charge and carrier mobility are accurately extracted by eliminating the effects of parasitic capacitances and series resistance <I>R</I><SUB>sd</SUB>. These observed data are compared with the data from planar MOS capacitor.</P>