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Jun-Hyun Park,Sangwon Lee,Kichan Jeon,Sunil Kim,Sangwook Kim,Jaechul Park,Ihun Song,Chang Jung Kim,Youngsoo Park,Dong Myong Kim,Dae Hwan Kim IEEE 2009 IEEE electron device letters Vol.30 No.10
<P>The density of states (DOS)-based DC <I>I</I>-<I>V</I> model of an amorphous gallium-indium-zinc oxide (<I>a</I>-GIZO) thin-film transistor (TFT) is proposed and demonstrated with self-consistent methodologies for extracting parameters. By combining the optical charge-pumping technique and the nonlinear relation between the surface potential (phi<I>S</I>) and gate voltage (<I>V</I> <SUB>GS</SUB>), it is verified that the proposed DC model reproduces well both the measured <I>V</I> <SUB>GS</SUB>-dependent mobility and the <I>I</I> <SUB>DS</SUB>-<I>V</I> <SUB>GS</SUB> characteristics. Finally, the extracted DOS parameters are <I>N</I> <SUB>TA</SUB> = 4.4 times 10<SUP>17</SUP> cm<SUP>-3</SUP> middot eV<SUP>-1</SUP>, <I>N</I> <SUB>DA</SUB> = 3 times 10<SUP>15</SUP> cm<SUP>-3</SUP> middot eV<SUP>-1</SUP>, <I>kT</I> <SUB>TA</SUB> = 0.023 eV, <I>kT</I> <SUB>DGA</SUB> = 1.5 eV, and <I>EO</I> = 1.8 eV, with the formulas of exponential tail states and Gaussian deep states.</P>
Synthesis of Active-Mode Power-Gating Circuits
Jun Seomun,Shin, Insup,Youngsoo Shin IEEE 2012 IEEE transactions on computer-aided design of inte Vol.31 No.3
<P>Active leakage is transient, which can be suppressed by design techniques such as dual-<I>Vt</I>. Active-mode power-gating (AMPG) can further reduce active leakage by power-gating groups of gates that perform computations with results that are not loaded due to clock-gating. AMPG involves several challenges; the grouping of gates must take circuit timing into account, and current switches need to be sized to preserve power network integrity as well as circuit timing. We propose solutions to these problems in the content of the entire process of synthesizing AMPG circuits. The physical design of AMPG circuits is also difficult due to the large number of virtual ground rails that must be mutually isolated. We address these issues by integrating placement with power network synthesis. Experiments on several test circuits implemented in 45-nm technology demonstrate the effectiveness of AMPG in the circuits that we synthesized, in terms of power consumption, area, wirelength, and timing.</P>
Design and Optimization of Power-Gated Circuits With Autonomous Data Retention
Jun Seomun,Youngsoo Shin IEEE 2011 IEEE transactions on very large scale integration Vol.19 No.2
<P>Power gating has been widely employed to reduce subthreshold leakage. Data retention elements (flip-flops and isolation circuits) are used to preserve circuit states during standby mode, if the states are needed again after wake-up. These elements must be controlled by an external power management unit, causing a network of control signals implemented with extra wires and buffers. A power-gated circuit with autonomous data retention (APG) is proposed to remove the overhead involved in control signals. Retention elements in APG derive their control by detecting rising potential of virtual ground rails when power gating starts, i.e., they control themselves without explicit control signals. Design of retention elements for APG is addressed to facilitate safe capturing of circuit states. Experiments with 65-nm technology demonstrate that, compared to standard power gating, total wirelength, and average wiring congestion are reduced by 8.6% and 4.1% on average, respectively, at a cost of 6.8% area increase. In order to fast charge virtual ground rails, a pMOS switch driven by a short pulse is employed to directly provide charges to virtual ground. This helps retention elements avoid short-circuit current while making transition to standby mode. The optimization procedure for sizing pMOS switch and deciding pulse width is addressed, and assessed with 65-nm technology. Experiments show that, compared to standard power gating, APG reduces the delay to enter and exit the standby mode by 65.6% and 28.9%, respectively, with corresponding energy dissipation during the period cut by 46.1% and 36.5%. Standby mode leakage power consumption is also reduced by 15.8% on average.</P>
Lee, Jun Ho,Park, Youngsoo,Choi, Kyoung Wook,Chung, Kyu-Jin,Kim, Tae Gon,Kim, Yong-Ha Korean Society of Plastic and Reconstructive Surge 2016 Archives of Plastic Surgery Vol.43 No.6
Background The use of acellular dermal matrix (ADM) in implant-based immediate breast reconstruction has been increasing. The current ADMs available for breast reconstruction are offered as aseptic or sterile. No published studies have compared aseptic and sterile ADM in implant-based immediate breast reconstruction. The authors performed a retrospective study to evaluate the outcomes of aseptic versus sterile ADM in implant-based immediate breast reconstruction. Methods Implant-based immediate breast reconstructions with ADM conducted between April 2013 and January 2016 were included. The patients were divided into 2 groups: the aseptic ADM (AlloDerm) group and the sterile ADM (MegaDerm) group. Archived records were reviewed for demographic data and postoperative complication types and frequencies. The complications included were infection, flap necrosis, capsular contracture, seroma, hematoma, and explantation for any cause. Results Twenty patients were reconstructed with aseptic ADM, and 68 patients with sterile ADM. Rates of infection (15.0% vs. 10.3%), flap necrosis (5.0% vs. 7.4%), capsular contracture (20.0% vs. 14.7%), seroma (10.0% vs. 14.7%), hematoma (0% vs. 1.5%), and explantation (10.0% vs. 8.8%) were not significantly different in the 2 groups. Conclusions Sterile ADM did not provide better results regarding infectious complications than aseptic ADM in implant-based immediate breast reconstruction.
Park, Jun-Hyun,Jeon, Kichan,Lee, Sangwon,Kim, Sangwook,Kim, Sunil,Song, Ihun,Park, Jaechul,Park, Youngsoo,Kim, Chang Jung,Kim, Dong Myong,Kim, Dae Hwan The Electrochemical Society 2010 Journal of the Electrochemical Society Vol.157 No.3
<P>The self-consistent technique for extracting density of states [DOS: [Formula]] in an amorphous indium gallium zinc oxide (a-IGZO) thin film transistor is proposed and demonstrated. The key parameters are the [Formula] of the a-IGZO active layer and the intrinsic channel mobility [Formula]. While the energy level [Formula] is scanned by the photon energy and gate-to-source voltage [Formula] sweep, its density is extracted from an optical response of capacitance–voltage characteristics. Using the [Formula]-dependent [Formula] as another boundary condition, a linearly mapped DOS assuming a linear relation between [Formula] and [Formula] is translated into a final DOS by fully considering a nonlinear relation between [Formula] and [Formula]. The final DOS is finally extracted and verified by finding the self-consistent solution satisfying both the linearly mapped DOS and the measured [Formula] dependence of [Formula] with the numerical iteration of a DOS-based [Formula] model. The extracted final DOS parameters are [Formula], [Formula], [Formula], [Formula], and [Formula] with the formula of exponential tail states and Gaussian deep states.</P>
Park, Jun Hyuk,Lin, Guan-Bo,Kim, Dong Yeong,Lee, Jong Won,Cho, Jaehee,Kim, Jungsub,Lee, Jinsub,Kim, Yong-Il,Park, Youngsoo,Schubert, E Fred,Kim, Jong Kyu Optical Society of America 2015 Optics express Vol.23 No.12
<P>The efficiency of an AlGaN deep-ultraviolet light-emitting diode with peak emission wavelength of 285 nm is investigated as a function of current over a wide range of temperatures (110 K to 300 K). We find that the efficiency-versus-current curve exhibits unique and distinct features over the entire temperature range including three points of inflection. At low temperatures, the change in slope in the efficiency-versus-current curve is particularly pronounced producing a minimum in the efficiency after which the efficiency rises again. Furthermore, at high current density, the low-temperature efficiency exceeds the room-temperature efficiency. The feature-rich efficiency-versus-current curve is consistent with an enhancement in p-type conductivity by field-ionization of acceptors that occurs in the high-injection regime and is particularly pronounced at low temperatures. Differential conductivity measurements show a marked rise in the high-injection regime that is well correlated to the minimum point in the efficiency-versus-current curve.</P>