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A Magnetic Amplifier using Nanocrystalline Soft Magnetic Material
Y. Shindo,T. Yoshihara,M. Otsubo,M. Sawada 전력전자학회 2011 ICPE(ISPE)논문집 Vol.2011 No.5
A Magnetic Amplifier using saturable reactor with nanocrystalline soft magnetic material is presented. A method of obtaining the frequency response is presented. Experimental results show that the method is adequate and practical. Moreover it is shown that the efficiency of the Magnetic Amplifier is comparable to the switching power supply with primary control, despite the existence of additional saturable reactors.
An, J.S.,Choi, C.M.,Shindo, Y.,Sutou, Y.,Jeong, H.S.,Song, Y.H. IET 2016 Electronics letters Vol.52 No.18
<P>The gradual erasing operation from reset state to set state adjusting pulse amplitude, duration time and falling time respectively in phase change device using Ge1Cu2Te3 is investigated. For this procedure, a relatively high voltage and increased falling time, which was able to produce both long-term potential and long-term depression in the time interval between pre-spike and post-spike is choosing. The results suggested that the presence of synaptic behaviour was due to controlled falling time rather than pulse amplitude.</P>
Impact of contact resistance on memory window in phase-change random access memory (PCRAM)
An, J. s.,Choi, C. m.,Shindo, S.,Sutou, Y.,Kwon, Y. w.,Song, Y. h. Springer Science + Business Media 2016 Journal of Computational Electronics Vol.15 No.4
<P>This paper investigates the impact of contact resistance on the memory window in phase-change random access memories (PCRAMs) using (GST). We discuss the increase of contact resistance, as device is scaled down to a nanometer size and the effects of contact resistivity changes with respect to the resistance window between the set and reset states. In a contact area of , the contact resistance in the set state occupies more than 80 % of the total resistance, and the occupied area increases as the contact area is scaled upward. The memory window is significantly degraded as the set resistance increases because of the increasing contact resistance. To maintain the memory window with more than two orders of magnitude of the resistance in a area, the contact resistance should be decreased to less than 60 % of that of a area by reducing contact resistivity or by some other method. We examine the reduction of contact resistance achieved by adopting a three-dimensional contact structure, and we propose this structure as a candidate for the scaled PCRAM.</P>
본흔 구,C.-G. Lee,D. Shindo,H. Makino,J. H. Chang,J. H. Lee,T. Yao,T. Hanada,Y. D. Kim,Y.-G. Park 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.III
InAs quantum dots (QDs) on In$_{0.52}$Al$_{0.48}$As layer lattice matched to (100) InP substrates were grown by solid-source molecular beam epitaxy. We performed a study on the structural and optical properties of InAs QDs with 0.8 eV (1.55 $\mu$m) emission by using transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy. The TEM image showed clear existence of the QDs. The PL showed $\sim$0.8 eV ($\sim$1.55 $\mu$m) emission from dislocation-free InAs QDs with height of $\sim$3.6 nm and base width of $\sim$20 nm. Activation energies obtained from temperature dependence of the integrated PL intensity were also similar to the reported values, confirming the formation of InAs QDs.
B. H. KOO,C. G. LEE,D. SHINDO,H. MAKINO,J. H. CHANG,T. YAO,T. HANADA,Y.-G. PARK 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.3
The effect of growth interruption (GI) on the structural and optical properties of InAs nanostructures was investigated by transmission electron microscopy (TEM) and photoluminescence (PL). By introducing the GI, a single PL peak changed to a distinctive multiple-peak feature with average full width at half maximum 30 meV, which shows the state lling of the several low energy peaks. In conjunction with the TEM results, the changes in the PL spectra due to GI are most probably correlated with the formation of different-height islands isolated from neighbor islands due to a 2D-3D transition of the InAs layer during the GI.