Nanocarrier-Based Biological Fluorescent Probes for Simultaneous Detection of Ketamine and Amphetamine in Latent Fingermarks

Jing Zhou,GAOLING ZHAO,Wangwei Lu,Lingtong Zhan,GAORONG HAN 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2019 NANO Vol.14 No.2

Nanocarrier-based biological fluorescent probes for ketamine and amphetamine have been prepared by conjugating red and green fluorescent nanoparticles (150-nm-sized) with anti-ketamine and anti-amphetamine antibodies, respectively, with the assistance of carbodiimide/N-hydroxysuccinimide. Biological fluorescent probes for ketamine and amphetamine could simultaneously detect these two drugs within a single fingermark by one-step test. Nanoparticles as carrier played dual-functional roles for not only fingermark visualization but also drug recognition. Latent fingermarks were visualized by the fluorescence signal generated from nanoparticles. The developed fingermarks clearly revealed ridge pattern and sufficient minutiae for individual identification. Ketamine and amphetamine were recognized by simply observing the colors of fluorescent images when the fingermark was checked in red and green channels. Detection limit of ketamine or amphetamine was 50 ng in fingermark. This work therefore provides a novel nanocarrier-based strategy of drug detection as well as personal identification with high selectivity, low background interference and fast testing, which can be further broadened to other drugs and molecules.

SEM-based Customer Loyalty Model : An Empirical Analysis with IT Enabled Financial Industries

Wang Wei,Lu Ke-bin 보안공학연구지원센터 2016 International Journal of Hybrid Information Techno Vol.9 No.6

Quantum Transport Simulations of CNTFETs: Performance Assessment and Comparison Study with GNRFETs

Wang, Wei,Wang, Huan,Wang, Xueying,Li, Na,Zhu, Changru,Xiao, Guangran,Yang, Xiao,Zhang, Lu,Zhang, Ting The Institute of Electronics and Information Engin 2014 Journal of semiconductor technology and science Vol.14 No.5

In this paper, we explore the electrical properties and high-frequency performance of carbon nanotube field-effect transistors (CNTFETs), based on the non-equilibrium Green's functions (NEGF) solved self - consistently with Poisson's equations. The calculated results show that CNTFETs exhibit superior performance compared with graphene nanoribbon field-effect transistors (GNRFETs), such as better control ability of the gate on the channel, higher drive current with lower subthreshold leakage current, and lower subthreshold-swing (SS). Due to larger band-structure-limited velocity in CNTFETs, ballistic CNTFETs present better high-frequency performance limit than that of Si MOSFETs. The parameter effects of CNTFETs are also investigated. In addition, to enhance the immunity against short - channel effects (SCE), hetero - material - gate CNTFETs (HMG-CNTFETs) have been proposed, and we present a detailed numerical simulation to analyze the performances of scaling down, and conclude that HMG-CNTFETs can meet the ITRS'10 requirements better than CNTs.

Investigation of Hetero - Material - Gate in CNTFETs for Ultra Low Power Circuits

Wang, Wei,Xu, Min,Liu, Jichao,Li, Na,Zhang, Ting,Jiang, Sitao,Zhang, Lu,Wang, Huan,Gao, Jian The Institute of Electronics and Information Engin 2015 Journal of semiconductor technology and science Vol.15 No.1

An extensive investigation of the influence of gate engineering on the CNTFET switching, high frequency and circuit level performance has been carried out. At device level, the effects of gate engineering on the switching and high frequency characteristics for CNTFET have been theoretically investigated by using a quantum kinetic model. It is revealed that hetero - material - gate CNTFET(HMG - CNTFET) structure can significantly reduce leakage current, enhance control ability of the gate on channel, and is more suitable for use in low power and high frequency circuits. At circuit level, using the HSPICE with look - up table(LUT) based Verilog - A models, the performance parameters of circuits have been calculated and the optimum combinations of ${\Phi}_{M1}/{\Phi}_{M2}/{\Phi}_{M3}$ have been concluded in terms of power consumption, average delay, stability, energy consumption and power - delay product(PDP). We show that, compared to a traditional CNTFET - based circuit, the one based on HMG - CNTFET has a significantly better performance (SNM, energy, PDP). In addition, results also illustrate that HMG - CNTFET circuits have a consistent trend in delay, power, and PDP with respect to the transistor size, indicating that gate engineering of CNTFETs is a promising technology. Our results may be useful for designing and optimizing CNTFET devices and circuits.

A new SDOF method of one-way reinforced concrete slab under non-uniform blast loading

Wang, Wei,Zhang, Duo,Lu, Fangyun,Liu, Ruichao Techno-Press 2013 Structural Engineering and Mechanics, An Int'l Jou Vol.46 No.5

A new effective model for calculation of the equivalent uniform blast load for non-uniform blast load such as close-in explosion of a one-way square and rectangle reinforced concrete slab is proposed in this paper. The model is then validated using single degree of freedom (SDOF) system with the experiments and blast tests for square slabs and rectangle slabs. Test results showed that the model is accurate in predicting the damage level on the tested RC slabs under the given explosive charge weight and stand-off distance especially for close-in blast load. The results are also compared with those obtained by conventional SDOF analysis and finite element (FE) analysis using solid elements. It is shown that the new model is more accurate than the conventional SDOF analysis and is running faster than the FE analysis.

The influence of load pulse shape on pressure-impulse diagrams of one-way RC slabs

Wang, Wei,Zhang, Duo,Lu, Fangyun Techno-Press 2012 Structural Engineering and Mechanics, An Int'l Jou Vol.42 No.3

This study is aimed at providing an efficient analytical model to obtain pressure- impulse diagram of one-way reinforced concrete slabs subjected to different shapes of air blast loading using single degree of freedom method (SDOF). A tri-linear elastic perfectly plastic SDOF model has been used to obtain the pressure-impulse diagram to correlate the blast pressure and the corresponding concrete flexural damage. In order to capture the response history for the slab, a new approximately SDOF method based on the conventional SDOF method is proposed and validated using published test data. The influences of pulse loading shape on the pressure-impulse diagram are studied. Based on the results, a pressure-impulse diagram generation method using SDOF and an analytical equation for the pressure-impulse diagram is proposed to different damage levels and different blast loading shapes.

Channel and Gate Workfunction-Engineered CNTFETs for Low-Power and High-Speed Logic and Memory Applications

Wang, Wei,Xu, Hongsong,Huang, Zhicheng,Zhang, Lu,Wang, Huan,Jiang, Sitao,Xu, Min,Gao, Jian The Institute of Electronics and Information Engin 2016 Journal of semiconductor technology and science Vol.16 No.1

Carbon Nanotube Field-Effect Transistors (CNTFETs) have been studied as candidates for post Si CMOS owing to the better electrostatic control and high mobility. To enhance the immunity against short - channel effects (SCEs), the novel channel and gate engineered architectures have been proposed to improve CNTFETs performance. This work presents a comprehensive study of the influence of channel and gate engineering on the CNTFET switching, high frequency and circuit level performance of carbon nanotube field-effect transistors (CNTFETs). At device level, the effects of channel and gate engineering on the switching and high frequency characteristics for CNTFET have been theoretically investigated by using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green's functions (NEGF) solved self - consistently with Poisson's equations. It is revealed that hetero - material - gate and lightly doped drain and source CNTFET (HMG - LDDS - CNTFET) structure can significantly reduce leakage current, enhance control ability of the gate on channel, improve the switching speed, and is more suitable for use in low power, high frequency circuits. At circuit level, using the HSPICE with look - up table(LUT) based Verilog - A models, the impact of the channel and gate engineering on basic digital circuits (inverter, static random access memory cell) have been investigated systematically. The performance parameters of circuits have been calculated and the optimum metal gate workfunction combinations of ${\Phi}_{M1}/{\Phi}_{M2}$ have been concluded in terms of power consumption, average delay, stability, energy consumption and power - delay product (PDP). In addition, we discuss and compare the CNTFET-based circuit designs of various logic gates, including ternary and binary logic. Simulation results indicate that LDDS - HMG - CNTFET circuits with ternary logic gate design have significantly better performance in comparison with other structures.