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High-Efficiency Heterojunction with Intrinsic Thin-Layer Solar Cells
Vinh Ai Dao,Sangho Kim,Youngseok Lee,Sunbo Kim,Jinjoo Park,Shihyun Ahn,Junsin Yi 한국태양광발전학회 2013 Current Photovoltaic Research Vol.1 No.2
Heterojunction with Intrinsic Thin-layer (HIT) solar cells are currently an important subject in industrial trends for thinner solar cell wafers due to the low-temperature of production processes, which is around 200°C, and due to their high-efficiency of 24.7%, as reported by the Panasonic (Sanyo) group. The use of thinner wafers and the enhancement of cell performance with fabrication at low temperature have been special interests of the researchers. The fundamental understanding of the band bending structures, choice of materials, fabrication process, and nano-scale characterization methods to provide necessary understanding of the interface passivation mechanisms, emitter properties, and requirements for transparent oxide conductive layers is presented in this review. This information should be used for the performance characterization of the developing technologies for HIT solar cells.
High-Efficiency Heterojunction with Intrinsic Thin-Layer Solar Cells: A Review
Dao, Vinh Ai,Kim, Sangho,Lee, Youngseok,Kim, Sunbo,Park, Jinjoo,Ahn, Shihyun,Yi, Junsin Korea Photovoltaic Society 2013 Current Photovoltaic Research Vol.1 No.2
Heterojunction with Intrinsic Thin-layer (HIT) solar cells are currently an important subject in industrial trends for thinner solar cell wafers due to the low-temperature of production processes, which is around $200^{\circ}C$, and due to their high-efficiency of 24.7%, as reported by the Panasonic (Sanyo) group. The use of thinner wafers and the enhancement of cell performance with fabrication at low temperature have been special interests of the researchers. The fundamental understanding of the band bending structures, choice of materials, fabrication process, and nano-scale characterization methods to provide necessary understanding of the interface passivation mechanisms, emitter properties, and requirements for transparent oxide conductive layers is presented in this review. This information should be used for the performance characterization of the developing technologies for HIT solar cells.
rf-Magnetron sputtered ITO thin films for improved heterojunction solar cell applications
Vinh Ai Dao,허종규,Hyungwook Choi,Hyeongsik Park,Kichan Yoon,Youngseok Lee,Yongkuk Kim,이준신,Nariangadu Lakshminarayan 한국물리학회 2010 Current Applied Physics Vol.10 No.3
Indium tin oxide (ITO) films of low resistivity, high transmittance and good figure of merit were prepared by radio frequency magnetron sputtering, at different substrate temperatures (Ts) under such a high k/d value and used as anti-reflection layer in heterojunction solar cells. For film deposition in the Ts range 150 ℃ < Ts ≤ 250 ℃, XRD shows that coexistence of the h1 0 0i and h1 1 1i textures. The resistivity and Hall mobility of ITO films were improved due to thermally induced crystallization. However, carrier concentration of these ITO films is sensitive to the Ts. We attributed these effects to the Ar+ ions bombardment and differing adatom mobility of the heated atoms on the substrate under such a high k/d value. Those ITO films were used to fabricate single-side heterojunction solar cells. As the Ts is increased, the device performance improves and the best photo voltage parameters of the device were found to be Voc = 640 mV, Jsc = 36.90 mA/㎠, FF = 0.71, η = 16.3% for Ts = 200 ℃. The decrease in performance beyond the Ts of 200 ℃ is attributed to hydrogen effusion to the defect in emitter layer. We noted that the figure of merit value of ITO films was reflected in the performance of devices.
이준신,Vinh Ai Dao,김경해,김영국,Duy Nguyen Van,Zhenghai Jin 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.2
Thin-film silicon/crystaline silicon heterojunction-type solar cels, combining the low-cost, low- temperature and light-weight of thin-film silicon with the high efficiency and high stability of crystaline silicon (c-Si), are studied widely due to the increased need for terrestrial and satelite applications. A major aspect when dealing with thin-film silicon/crystaline silicon heterojunction solar cels is quality of the silicon film-crystaline silicon hetero-interface. In this study, the carrier transport mechanisms in mixed phase (amorphous and microcrystaline) thin-film silicon/p type crystaline silicon heterojunction for various thin-film thicknesses and SiH4/H2 ratios are investi- gated. The electrical properties are strongly affected by the defect state distribution and the band offset at the hetero-interface. Two carrier transport mechanisms are recognized. The recombination process involving the interface states on the thin-film silicon side dominates at low forward bias (V < 0.4 V), whereas multi-step tunneling capture emission (MTCE) dominates at the high forward bias (0.4 < V < 0.8 V).
Kim, Sangho,Dao, Vinh Ai,Shin, Chonghoon,Balaji, Nagarajan,Yi, Junsin American Scientific Publishers 2014 Journal of Nanoscience and Nanotechnology Vol.14 No.12
<P>The back surface field (BSF) plays an important role for the efficiency of the heterojunction intrinsic thin-film (HIT) solar cell. In this paper, the effect of thickness variation in n-type micro crystalline BSF layer was investigated by Raman and spectroscopy ellipsometry. As we increase the crystalline volume fraction (X(c)) from 6% to 59%, the open circuit voltage (V(oc)) increases from 573 to 696 mV with increase in fill factor from 59% to 71%. However, we observed that V(oc) and FF are decreased over 59% X(c) of n-type μc-Si:H BSF layer. It seems that higher X(c) micro layer include lots of defects. The quantum efficiency (QE) measurements were demonstrated on optimized thickness of n-doped micro BSF layer. In the long wavelengths region, the QE slightly increases with increasing the n-type μc-Si:H BSF layer thickness from 10 to 40 nm because of BSF effect, whereas the QE decreases when n-type μc-Si:H BSF layer thickness increases from 40 to 120 nm due to defects in the layer. The performance of heterojunction solar cell device was improved with the optimized thickness on n-doped micro BSF layer the best photo voltage parameters of the device were found to be V(oc) of 696 mV, short-circuit current density of 36.09 mA/cm2 and efficiency of 18.06% at n-doped micro BSF layer thickness of 40 nm.</P>
Kim, Sangho,Dao, Vinh Ai,Trinh, Thanh Thuy,Duy Phong, Pham,Park, Jinjoo,Thi Hanh Thu, Vu,Thuy Ngoc Thuy, Nguyen,Thi Thanh Giang, Ngo,Lee, Sunhwa,Yi, Junsin Institute of Physics 2019 Semiconductor science and technology Vol.34 No.6
<P>In this study, a recorded high open-circuit voltage (V<SUB>oc</SUB>) of 1.61 V and fill factor (FF) of 76.65% of a-Si:H p-i-n/heterojunction with intrinsic thin layer (HIT)-type multi-junction solar cells were achieved using grain size enlargement within the p-type <I>μ</I>c-Si:H layer in a p-type <I>μ</I>c-Si:H/n-type a-Si:H tunneling recombination junction (TRJ) layer. The p-type <I>μ</I>c-Si:H layer’s conductivity increased from 1.74?×?10<SUP>−4</SUP> to 0.1 S cm<SUP>−1</SUP> as the film’s crystallinity increased from 41.5% to 67.5%. The a-Si:H p-i-n/HIT-type multi-junction solar cells also benefited from the tuning up crystalline p-type <I>μ</I>c-Si:H layer, showing the increase of V<SUB>oc</SUB> and FF from 1.5 V and 49.88% to 1.61 V and 76.65%, respectively; while the short-circuit current density (9.38?±?0.2 mA cm<SUP>−2</SUP>) did not change significantly. These are the highest V<SUB>oc</SUB> and FF values achieved in a-Si:H p-i-n/HIT-type multi-junction solar cells, recently. From dark current-voltage analysis, it was deduced that the enhanced crystalline films could assist in suppressing carrier interference in the TRJ layer, thus reduces electric field distortion and mitigates recombination in the device. In summary, an enhanced crystalline p-type <I>μ</I>c-Si:H layer could be a viable option for ensuring an excellent TRJ layer, thus achieved high efficiency of inorganic/c-Si tandem solar cells. Using optimal condition with crystallinity of 74.1%, the photovoltaic parameters of the device yield V<SUB>oc</SUB>, J<SUB>sc</SUB> and FF of 1.51 V, 13.01 mA cm<SUP>−2</SUP> and 71.45%, which in turned giving an efficiency of 14.04% for a-SiGe:H p-i-n/HIT-type tandem solar cell.</P>
Diode Equivalent Parameters of Solar Cell
Sk Md Iftiquar,Vinh Ai Dao,Junsin Yi 한국태양광발전학회 2015 Current Photovoltaic Research Vol.3 No.4
Current characteristic curve of an illuminated solar cell was used to determine its reverse saturation current density (J0), ideality factor (n) and resistances, by using numerical diode simulation. High efficiency amorphous silicon, heterojunction crystalline Si(HIT), plastic and organic-inorganic halide perovskite solar cell shows n=3.27 for a-Si and n=2.14 for improved HIT cell as high and low n respectively, while the perovskite and plastic cells show n=2.56 and 2.57 respectively. The J0 of these cells remain within 7.1×10<SUP>-7</SUP> and 1.79×10<SUP>-8</SUP> A/㎠ for poorer HIT and improved perovskite solar cell respectively.