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Kim, Do-Kywn,Sindhuri, V.,Kim, Dong-Seok,Jo, Young-Woo,Kang, Hee-Sung,Jang, Young-In,Kang, In Man,Bae, Youngho,Hahm, Sung-Ho,Lee, Jung-Hee The Institute of Electronics and Information Engin 2014 Journal of semiconductor technology and science Vol.14 No.5
In this paper, we have characterized the electrical properties related to gate leakage current in AlGaN/GaN MISHFETs with varying the thickness (0 to 10 nm) of $Al_2O_3$ gate insulator which also serves as a surface protection layer during high-temperature RTP. The sheet resistance of the unprotected TLM pattern after RTP was rapidly increased to $1323{\Omega}/{\square}$ from the value of $400{\Omega}/{\square}$ of the as-grown sample due to thermal damage during high temperature RTP. On the other hand, the sheet resistances of the TLM pattern protected with thin $Al_2O_3$ layer (when its thickness is larger than 5 nm) were slightly decreased after high-temperature RTP since the deposited $Al_2O_3$ layer effectively neutralizes the acceptor-like states on the surface of AlGaN layer which in turn increases the 2DEG density. AlGaN/GaN MISHFET with 8 nm-thick $Al_2O_3$ gate insulator exhibited extremely low gate leakage current of $10^{-9}A/mm$, which led to superior device performances such as a very low subthreshold swing (SS) of 80 mV/dec and high $I_{on}/I_{off}$ ratio of ${\sim}10^{10}$. The PF emission and FN tunneling models were used to characterize the gate leakage currents of the devices. The device with 5 nm-thick $Al_2O_3$ layer exhibited both PF emission and FN tunneling at relatively lower gate voltages compared to that with 8 nm-thick $Al_2O_3$ layer due to thinner $Al_2O_3$ layer, as expected. The device with 10 nm-thick $Al_2O_3$ layer, however, showed very high gate leakage current of $5.5{\times}10^{-4}A/mm$ due to poly-crystallization of the $Al_2O_3$ layer during the high-temperature RTP, which led to very poor performances.
Device Performances Related to Gate Leakage Current in Al₂O₃/AlGaN/GaN MISHFETs
Do-Kywn Kim,V.Sindhuri,Dong-Seok Kim,Young-Woo Jo,Hee-Sung Kang,Young-In Jang,In Man Kang,Youngho Bae,Sung-Ho Hahm,Jung-Hee Lee 대한전자공학회 2014 Journal of semiconductor technology and science Vol.14 No.5
In this paper, we have characterized the electrical properties related to gate leakage current in AlGaN/GaN MISHFETs with varying the thickness (0 to 10 nm) of Al₂O₃ gate insulator which also serves as a surface protection layer during high-temperature RTP. The sheet resistance of the unprotected TLM pattern after RTP was rapidly increased to 1323 Ω/□ from the value of 400 Ω/□ of the as-grown sample due to thermal damage during high temperature RTP. On the other hand, the sheet resistances of the TLM pattern protected with thin Al₂O₃ layer (when its thickness is larger than 5 nm) were slightly decreased after high-temperature RTP since the deposited Al₂O₃ layer effectively neutralizes the acceptor-like states on the surface of AlGaN layer which in turn increases the 2DEG density. AlGaN/GaN MISHFET with 8 nmthick Al₂O₃ gate insulator exhibited extremely low gate leakage current of 10<SUP>-9</SUP> A/mm, which led to superior device performances such as a very low subthreshold swing (SS) of 80 mV/dec and high Ion/Ioff ratio of ~ 1010. The PF emission and FN tunneling models were used to characterize the gate leakage currents of the devices. The device with 5 nm-thick Al₂O₃ layer exhibited both PF emission and FN tunneling at relatively lower gate voltages compared to that with 8 nm-thick Al₂O₃ layer due to thinner Al₂O₃ layer, as expected. The device with 10 nm-thick Al₂O₃ layer, however, showed very high gate leakage current of 5.5 ×10<SUP>-4</SUP> A/mm due to poly-crystallization of the Al₂O₃ layer during the high-temperature RTP, which led to very poor performances.
Performance of AlGaN/GaN Nanowire Ω-Shaped-Gate Fin-Shaped Field-Effect Transistor
Lee, Dong-Gi,Sindhuri, V.,Jo, Young-Woo,Son, Dong-Hyeok,Kang, Hee-Sung,Lee, Jae-Hong,Lee, Jae-Hoon,Cristoloveanu, Sorin,Im, Ki-Sik,Lee, Jung-Hee American Scientific Publishers 2016 Journal of Nanoscience and Nanotechnology Vol.16 No.5