http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Suhui Lee,Mativenga, Mallory,Jin Jang IEEE 2014 IEEE electron device letters Vol.35 No.9
<P>A highly stable, dual-gate (DG) amorphous, indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) with an offset top-gate (TG) is reported. Given that both gates are opaque and electrically tied together, the TG functions as a lightshield and drain-current (IDS) enhancer as synchronized gate-voltage (VGS) sweep induces bulk-accumulation (BA) at positive voltages. It is demonstrated here that regardless of the offsets between the TG and source/drain electrode, this BA a-IGZO TFT is immune to negative bias and light-illumination stress (NBIS) when the TG covers at least 50% of the channel region. Therefore, high performance BA a-IGZO TFTs that are also immune to NBIS can be designed without introducing additional parasitic capacitance that occurs when the TG overlaps the source and/or drain electrode(s).</P>
Suhui Lee,Xiuling Li,Mativenga, Mallory,Jin Jang IEEE 2015 IEEE electron device letters Vol.36 No.12
<P>The overlap between gate and source/drain electrodes gives rise to parasitic capacitance (C-gd), which causes RC signal delay in thin-film transistor (TFT) circuits. Here, we show that in amorphous-indium-gallium-zinc-oxide TFTs, offsets as large as 0.5 mu m, result in only slight reductions in drain-current, such that (compared with single-gate TFTs with 2.5-mu m gate-to-source/drain overlaps) an overall three times increase in switching speed can be achieved in dual-gate TFTs with offset top-gates shorted to offset bottom-gates. The high switching speed (similar to 18 ns/stage delay), which is a combined effect of the bulk-accumulation achieved by shorting the two gates and zero C-gd, results in high-speed amorphous oxide TFT-based circuits.</P>
색명 표기에 따른 주황, 연두, 남색, 자주의 Color 인식 비교
이수희(Suhui Lee),이윤진(YounJin Lee) 한국색채학회 2018 한국색채학회 학술대회 Vol.2018 No.5
KS A 0011:2015 물체색의 색 이름 중, 주황, 연두, 남색, 자주 4가지 색의 색명 표기법이 개정되었다. 개정된 색명표기를 보고 과연 사람들은 “Yellow Red를 주황이라고 느낄까?, Orange라고 느낄까? 아니면 주황과는 전혀 다른 Color로 인식할까?” 라는 의문점에서 연구를 시작하였다. 설문을 통한 연구결과 KS 주황과 개명 전의 Orange, KS 자주와 개명 전의 Reddish Purple를 같은 Color로 인식한다는 가능성을 보였으며, 연두의 경우 피험자들은 색명의 영문 앞 단어를 보고 선택하여 KS 연두를 개명 후의 Green Yellow로 인식한다는 가능성을 보였다. 남색은 색시편의 색상범위가 연구 목적에 맞게 재현된 색편이 없어서 Color 선택의 정확성이 떨어지는 한계점이 있었다. 이처럼 새로운 색명표기로의 Color 인식은 혼란스러울 수밖에 없다. 공통된 Color 인식을 갖기 위해서는 오랜 기간의 시간과 교육이 필요하다는 것을 알 수 있었다. 본 연구가 개정된 색명과 Color 인식 범위에 대한 기초자료로 활용될 수 있기를 바라며, 개정된 색명 인식에 따른 색명 체계 정립에 도움이 되고자 한다.
이제명(Je-Myong Lee),이호석(Ho Suk Lee),홍성수(Sung Soo Hong),김수회(Suhui Kim) 한국정보과학회 2003 한국정보과학회 학술발표논문집 Vol.30 No.2Ⅱ
본 논문은 마스크 방식의 관심 영역(ROI, Region Of Interest) 부호 설계와 구현에 대하여 제시한다. 관심 영역에 대한 정지 영상 압축 알고리즘은 웨이블릿 변환과 사용자가 지정한 관심 영역을 결합하여 설계하였다. 즉, 사용자가 지정한 관심 영역을 이용하여 관심 영역 마스크를 생성한다. 양자화 과정에서 웨이블릿 계수들을 각 레벨과 서브밴드로 구분하고 생성된 관심 영역 마스크 정보를 이용하여 양자화 과정을 처리하여 부호화한다. 관심 영역에 대하여서는 높은 영상 품질과 그리고 전체 영상에 대하여서는 높은 압축을 동시에 실현시킬 수 있는 마스크 방식의 관심 영역 부호화 알고리즘을 설계하고 구현하였다.
Double-Gate Modulated Corbino TFTs
Choe, Younwoo,Lee, Suhui,Billah, Mohammad Masum,Mativenga, Mallory,Jang, Jin IEEE 2016 IEEE electron device letters Vol.37 No.9
<P>Short-channel Corbino thin-film transistors (TFTs) exhibit infinite output resistance beyond pinchoff when the outerring electrode is biased as the drain but suffer from low drain currents. It is shown here that the employment of a thin (<25 nm) amorphous oxide semiconductor and a double-gate (DG) structure (with a top-gate electrically tied to a bottom-gate) increases the drain currents of the Corbino TFTs biased in the outer-drain condition by over two times through bulk-accumulation (BA), without compromising their infinite output resistance beyond pinchoff or bias, temperate, and light stability. By experiment and through 3-D TCAD simulations, evidence of BA under DG modulation and the origin of the infinite output resistance beyond pinchoff in Corbino TFTs are also revealed in this letter.</P>
Reduction of Negative Bias and Light Instability of a-IGZO TFTs by Dual-Gate Driving
Sejin Hong,Suhui Lee,Mativenga, Mallory,Jin Jang IEEE 2014 IEEE electron device letters Vol.35 No.1
<P>Stability under negative-bias-illumination-stress (NBIS) of dual-gate (top- and bottom-gate) amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors is investigated. It is found that the negative threshold-voltage shift (ΔV<SUB>TH</SUB>) induced by NBIS is much smaller under dual-gate driving (when the two gates are electrically tied together) compared with single-gate driving. For a 20 nm-thick a-IGZO active layer, this is attributed to bulk accumulation, where electrons are accumulated across the entire depth of the active layer, which is responsible for the small negative ΔV<SUB>TH</SUB> after NBIS. Due to bulk accumulation, the Fermi level can be easily shifted by dual-gate driving as compared with the conventional single-gate driving, even after NBIS.</P>
Mativenga, Mallory,Sungjin An,Suhui Lee,Jaegwang Um,Di Geng,Mruthyunjaya, Ravi K.,Heiler, Gregory N.,Tredwell, Timothy J.,Jin Jang IEEE 2014 IEEE transactions on electron devices Vol.61 No.6
<P>Intrinsic mobility and intrinsic channel resistance (R<SUB>CH</SUB>) of amorphous, In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) with varying channel length (L) are investigated using a gated four-probe back-channel-etched TFT design. The intrinsic R<SUB>CH</SUB> is found to decrease from ~500 to ~250 kΩ per unit area by increasing V<SUB>GS</SUB> from 10 to 20 V. The intrinsic mobility is ~17 cm<SUP>2</SUP>/V·s, which is about 20% higher than that derived from the normal two-point probe measurements. Source and drain parasitic resistance (R<SUB>PAR</SUB>) of the a-IGZO TFTs is found to be of the same order of magnitude as the R<SUB>CH</SUB>-which is different from hydrogenated amorphous-silicon (a-Si:H) TFTs, where TFT operation is dominated by R<SUB>PAR</SUB>.</P>
Seonghyun Jin,Younwoo Choe,Suhui Lee,Tae-Woong Kim,Mativenga, Mallory,Jin Jang IEEE 2016 IEEE electron device letters Vol.37 No.3
<P>We report high performance p-type poly-Si thin-film transistors (TFTs) achieved by lateral grain growth of amorphous silicon (a-Si) by using a continuous-wave blue diode laser of wavelength 445 nm. The blue laser beam is efficiently absorbed into the a-Si film, such that full melting and lateral crystallization is achieved in all thicknesses investigated, 50-200 nm. TFTs fabricated with 75-, 100-, and 125-nm-thick poly-Si films laterally grown by the blue laser annealing exhibited field-effect mobility of 108 +/- 7, 104 +/- 9, and 134 +/- 12 cm(2)/V . s, and subthreshold swing of 210 +/- 51, 191 +/- 16, and 193 +/- 53 mV/decade, respectively, and high ON/OFF current ratio of similar to 10(8).</P>
Jae Kwang Um,Suhui Lee,Seonghyun Jin,Mativenga, Mallory,Se Yun Oh,Choong Hun Lee,Jin Jang IEEE 2015 IEEE transactions on electron devices Vol.62 No.7
<P>We report high-performance homojunction amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with low-resistive a-IGZO source/drain (S/D) electrodes. The a-IGZO S/D electrodes are selectively treated with high-power NF3 plasma, which reduces their resistivity from ~16 to 5.5×10<SUP>-3</SUP> Ω · cm. X-ray photoelectron spectroscopy indicates an increase in weakly bonded oxygen and a substantial amount of indium-fluorine and zinc-fluorine bonds at the a-IGZO top surface (extending to ~7 nm into the bulk) after plasma treatment. Temperature-dependent conductivity measurements show metallic behavior of the a-IGZO after treatment. It is concluded that fluorine atoms substitute for oxygen atoms-generating free electrons in the process and/or occupy oxygen vacancy sites-eliminating electron trap sites. As a result, the homojunction TFTs show good ON-state characteristics with typical field-effect mobility, subthreshold gate-voltage swing, and turn-ON voltage of 19 ± 1 cm<SUP>2</SUP>/V·s, 178 ± 30 mV/decade, and -3.2 ± 1.5 V, respectively. Good stability at high temperature and under bias and light stress are also exhibited by the homojunction TFTs, verifying a stable doping effect by the NF3 plasma treatment.</P>