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Current Status of Thin Film Silicon Solar Cells for High Efficiency
Shin, Chonghoon,Lee, Youn-Jung,Park, Jinjoo,Kim, Sunbo,Park, Hyeongsik,Kim, Sangho,Jung, Junhee,Yi, Junsin Korea Photovoltaic Society 2017 Current Photovoltaic Research Vol.5 No.4
The researches on the silicon-based thin films are being actively carried out. The silicon-based thin films can be made as amorphous, microcrystalline and mixed phase and it is known that the optical bandgap can be controlled accordingly. They are suitable materials for the fabrication of single junction, tandem and triple junction solar cells. It can be used as a doping layer through the bonding of boron and phosphorus. The carbon and oxygen can bond with silicon to form a wide range of optical gap. Also, The optical gap of hydrogenated amorphous silicon germanium can be lower than that of silicon. By controlling the optical gaps, it is possible to fabricate multi-junction thin film silicon solar cells with high efficiencies which can be promising photovoltaic devices.
Shin, Chonghoon,Park, Jinjoo,Kim, Sangho,Park, Hyeongsik,Jung, Junhee,Bong, Sungjae,Lee, Youn-Jung,Yi, Junsin American Scientific Publishers 2014 Journal of Nanoscience and Nanotechnology Vol.14 No.12
<P>Highly conducting boron-doped microcrystalline silicon (p-type μc-Si:H) thin films have been prepared by radio frequency plasma-enhanced chemical-vapor deposition (RF-PECVD). In this work, the effects of hydrogen dilution, doping ratio, plasma power, deposition pressure and substrate temperature on the growth and the properties of boron-doped microcrystalline silicon (p-type μc-Si:H) thin films are investigated. The electrical, chemical and structural properties are improved with increasing crystallite, which depends on the plasma conditions. For various plasma parameters, the crystalline volume fraction (X(c)), dark conductivity (σ(d)), activation energy (E(a)), hydrogen content (C(H)), surface roughness (S(r)), and micro void fraction (R*) were measured, and they were 0-72%, 4.17-10(-4) S/cm-1.1 S/cm, 0.041-0.113 eV, 3.8-11.5 at.%, 3.2 nm-12.2 nm, and 0.47-0.80, respectively. The film with R* of 0.47 and C(H) of about 5 at.% belonged to a region of low disorder, and acted as a good passivation layer.</P>
Shin, Chonghoon,Park, Jinjoo,Kim, Sangho,Jang, Juyeon,Jung, Junhee,Lee, Youn-Jung,Yi, Junsin American Scientific Publishers 2014 Journal of Nanoscience and Nanotechnology Vol.14 No.10
<P>Electrode distances and gas flow ratios are important parameters for fabricating intrinsic (i-type) layers of hydrogenated amorphous silicon (a-Si:H) films using a very high frequency plasma-enhanced chemical-vapor deposition (VHF-PECVD) system. In this work, we investigated the relationship between the electrode distances and gas flow ratios on the properties of i-type a-Si:H films. The electrical, chemical and structural properties are improved with decreasing electrode distances (20-40 mm) at a hydrogen ratio [R (H2/SiH4) = 4], due to the low electron temperature and heating effect. A low electron temperature generates silane-related-reactive species (SiH3) and decreases structural disorder resulting in high quality i-type a-Si:H films. The electrical, chemical and structural properties of the a-Si:H films are confirmed using Al coplanar electrodes, FTIR, Raman spectroscopy, and spectroscopy ellipsometry (SE). When a solar cell is fabricated using the a-Si:H film, J(sc) of 13.2-14.8 mA/cm2, photoconductivity of 1.5 x 10(-5)-8.6 x 10(-6) S/cm, Si--H2 content of 0-1.24 at.%, and hydrogen content of about 10 at.% are obtained. These results together with a model of the plasma chemistry indicate that H atoms and SiH3 radicals play an important role in the deposition process.</P>
Current Status of Thin Film Silicon Solar Cells for High Efficiency
Chonghoon Shin,Youn-Jung Lee,Jinjoo Park,Sunbo Kim,Hyeongsik Park,Sangho Kim,Junhee Jung,Junsin Yi 한국태양광발전학회 2017 Current Photovoltaic Research Vol.5 No.4
The researches on the silicon-based thin films are being actively carried out. The silicon-based thin films can be made as amorphous, microcrystalline and mixed phase and it is known that the optical bandgap can be controlled accordingly. They are suitable materials for the fabrication of single junction, tandem and triple junction solar cells. It can be used as a doping layer through the bonding of boron and phosphorus. The carbon and oxygen can bond with silicon to form a wide range of optical gap. Also, The optical gap of hydrogenated amorphous silicon germanium can be lower than that of silicon. By controlling the optical gaps, it is possible to fabricate multi-junction thin film silicon solar cells with high efficiencies which can be promising photovoltaic devices.
Kim, Sangho,Shin, Chonghoon,Balaji, Nagarajan,Yi, Junsin American Scientific Publishers 2015 Journal of Nanoscience and Nanotechnology Vol.15 No.3
<P>The back surface field (BSF) plays a vital role for high efficiency in the Heterojunction Intrinsic Thin (HIT) film solar cell. This paper investigated the effect of crystalline volume fraction (Xc) and 1% hydrogen diluted phosphine (PH3) gas doping concentration of the n-type µc-Si:H back surface file (BSF) layer. Initially, the thickness of the n-type µc-Si:H BSF layer was optimized. With increase in Xc from 6% to 59%, the open circuit voltage (Voc) increased from 573 mV to 696 mV, and the fill factor (FF) also increased from 59% to 71%. In the long wavelengths region (??? 950 nm), the QE of the solar cells decreased over the optimized Xc of the n-doped micro BSF layer, due to the defects of a film. In the second part of this paper, the effect of high conductivity n-type µc-Si:H BSF layer with optimized thickness on the performance of HIT solar cells was investigated, by doping gas ratio variation. Even though Xc decreased, conductivity was increased, with increasing PH3 doping concentration. Under the optimized condition, a n-µc-Si:H BSF layer has a dark conductivity of 2.59 S/cm, activation energy of 0.0519 eV, and X, of 52%. The conversion efficiency of 18.9% was achieved with a Voc of 706 mV, fill factor of 72%, and short circuit current density of 37.1 mW·cm(-2).</P>
Park, Jinjoo,Shin, Chonghoon,Park, Hyeongsik,Jung, Junhee,Lee, Youn-Jung,Bong, Sungjae,Dao, Vinh Ai,Balaji, Nagarajan,Yi, Junsin American Scientific Publishers 2015 Journal of Nanoscience and Nanotechnology Vol.15 No.3
<P>We investigated thin film silicon solar cells with boron doped hydrogenated nanocrystalline silicon/ hydrogenated amorphous silicon oxide [p-type nc-Si:H/a-SiOx:H] layer. First, we researched the bandgap engineering of diborane (B2H6) doped wide bandgap hydrogenated nanocryslline silicon (p-type nc-Si:H) films, which have excellent electrical properties of high dark conductivity, and low activation energy. The films prepared with lower doping ratio and higher hydrogen dilution ratio had higher optical gap (Eg), with higher dark conductivity (??(d)), and lower activation energy (Ea). We controlled Eg from 2.10 eV to 1.75 eV, with ??(d) from 1.1 S/cm to 7.59 x 10(-3) S/cm, and Ea from 0.040 eV to 0.128 eV. Next, we focused on the fabrication of thin film silicon solar cells. By inserting p-type nc-Si:H film into the thin film silicon solar cells, we achieved a remarkable increase in the built-in potential from 0.803 eV to 0.901 eV. By forming p-type nc-Si:H film between SnO2:F/ZnO:Al (30 nm) and p-type a-SiOx:H layer, the solar cell properties of open circuit voltage (Voc), short circuit current density (Jsc), and efficiency (관) were improved by 3.7%, 9.2%, and 9.8%, respectively.</P>
Jung, Junhee,Kim, Sunbo,Shin, Chonghoon,Park, Jinjoo,Yi, Junsin American Scientific Publishers 2017 Journal of Nanoscience and Nanotechnology Vol.17 No.11
<P>This research paper discusses a backside reactive ion etching (RIE) process to improve the light trapping properties of micromorph tandem solar cells. Reflection mostly occurs at the interface between the and silver electrode layers. We increase the amount of diffused reflection by introducing an etched rough interface. Absorption of diffused and scattered light is more efficient due to the increased light path length in the cells. Surface morphology was observed by atomic force microscopy (AFM). From this experiment the short circuit current density increased from 10.39 to 11.03 mA/cm(2), measured and calculated by quantum efficiency results. As the etching time increases, the fill factor decreased due to increased recombination sites at the broader interface between the electrode and the n-mu c-Si:1-1 layer. We applied hydrogen treatment in order to reduce this side effect. By adjusting this technique with a H-2 gas source, we could get a higher fill factor of 74.65% and energy conversion efficiency of 11.44%.</P>
Kim, Sangho,Dao, Vinh Ai,Shin, Chonghoon,Balaji, Nagarajan,Yi, Junsin American Scientific Publishers 2014 Journal of Nanoscience and Nanotechnology Vol.14 No.12
<P>The back surface field (BSF) plays an important role for the efficiency of the heterojunction intrinsic thin-film (HIT) solar cell. In this paper, the effect of thickness variation in n-type micro crystalline BSF layer was investigated by Raman and spectroscopy ellipsometry. As we increase the crystalline volume fraction (X(c)) from 6% to 59%, the open circuit voltage (V(oc)) increases from 573 to 696 mV with increase in fill factor from 59% to 71%. However, we observed that V(oc) and FF are decreased over 59% X(c) of n-type μc-Si:H BSF layer. It seems that higher X(c) micro layer include lots of defects. The quantum efficiency (QE) measurements were demonstrated on optimized thickness of n-doped micro BSF layer. In the long wavelengths region, the QE slightly increases with increasing the n-type μc-Si:H BSF layer thickness from 10 to 40 nm because of BSF effect, whereas the QE decreases when n-type μc-Si:H BSF layer thickness increases from 40 to 120 nm due to defects in the layer. The performance of heterojunction solar cell device was improved with the optimized thickness on n-doped micro BSF layer the best photo voltage parameters of the device were found to be V(oc) of 696 mV, short-circuit current density of 36.09 mA/cm2 and efficiency of 18.06% at n-doped micro BSF layer thickness of 40 nm.</P>
Boron-doped hydrogenated mixed-phase silicon as thermo-sensing films for infrared detectors
Phong Pham, Duy,Park, Jinjoo,Shin, Chonghoon,Kim, Sangho,Nam, Yonghyun,Kim, Geunho,Kim, Minsik,Yi, Junsin Elsevier 2018 Materials science in semiconductor processing Vol.74 No.-
<P><B>Abstract</B></P> <P>Silicon materials have been widely used as thermo-sensing layers in infrared detectors or uncooled micro-bolometers. Parameters such as a large thermal coefficient of resistance (TCR), low sheet resistance (R<SUB>s</SUB>), and low 1/f noise are important for high performance of these devices. However, there is always a trade-off between these parameters. For example, the crystalline silicon materials typically exhibit low R<SUB>s</SUB> and 1/f noise, and significantly low TCR, while the amorphous silicon materials generally have large TCR, and considerably high R<SUB>s</SUB> and 1/f noise. Consequently, the best trade-off can be achieved by using a mixed-phase structure of silicon materials, i.e. an intermediate form between the crystalline and amorphous structures. Herein we report the important characteristics of hydrogenated mixed-phase silicon films, deposited by the plasma-enhanced chemical vapour deposition process, for infrared detectors. The films in the mixed-phase structure showed high TCR values in the range of 2–3%K<SUP>–1</SUP> and moderate sheet resistances in range of 10–40MΩsq<SUP>−1</SUP>. These results indicate that the mixed-phase silicon films are potential alternatives to conventional boron doped hydrogenated amorphous and microcrystalline silicon films for use as thermo-sensing layers in infrared detectors.</P>