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Laser-Acoustic Techniques for Temperature Measurements in Semiconductor Processing
Lee, Y. J.,Yakud, B. T. Khuri,Saraswat, K. C. 대한전자공학회 1991 ICVC : International Conference on VLSI and CAD Vol.2 No.1
An acoustics-based technique for measuring temperature in a rapid thermal processing environment is investigated. A silicon wafer is placed in a rapid thermal processor with the back side facing the heating lamp. A transducer designed to provide a 170 kHz acoustic signal is placed perpendicular to the plane of the wafer. An acoustic wave launched parallel to the wafer surface is detected at two areas using two probe-beam deflection detectors. By measuring the attenuation and phase difference between the signals detected at the two points, the velocity of the acoustic wave can be accurately determined. The strong temperature dependence of the acoustic wave velocity can be exploited to obtain temperature measurements.
Yu, H.Y.,Battal, E.,Okyay, A.K.,Shim, J.,Park, J.H.,Baek, J.W.,Saraswat, K.C. Elsevier 2013 Current Applied Physics Vol.13 No.6
We investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth by spreading resistance profiling analysis. In addition, we present an accurate model for the kinetics of the diffusion in the in-situ process, modeling combined growth and diffusion events. The activation energy and pre-exponential factor for phosphorus (P) diffusion are determined to be 1.91 eV and 3.75 x 10<SUP>-5</SUP> cm<SUP>2</SUP>/s. These results show that P in-situ doping diffusivity is low enough to form shallow junctions for high performance Ge devices.
Rao, A. Ananda,Chaudhury, Rekha,Kumar, Suseel,Velu, D.,Saraswat, R.P.,Kamble, C.K. Korean Society of Sericultural Science 2007 International Journal of Industrial Entomology Vol.15 No.1
A simple and reliable cryo technique using desiccation and slow freezing of winter dormant buds was employed for 238 core collection of mulberry germplasm collected from diverse geographical regions and maintained under tropical conditions in the ex situ field gene bank to develop long-term biodiversity conservation for ensuring sustainable utilization of these valuable resources. Desiccation and freezing tolerance of bud grafts and excised shoot apices in the axillary buds of different Morus species under in vivo and in vitro condition indicated species-specific variation and most of the wild Morus species were found sensitive. In vitro regeneration and cryopreservation($-196^{\circ}C$) protocols using differentiated bud meristem like axillary winter dormant buds were worked out for a wide range of Morus species, land races, wild and cultivated varieties. Successful cryopreservation of mulberry winter dormant buds of different accessions belonging to M. indica, M. alba, M. latifolia, M. cathayana, M. laevigata, M. nigra, M. australis, M. bombycis, M. sinensis, M multicaulis and M. rotundiloba was achieved. Among wild species Morus tiliaefolia, and M. serrata showed moderate recovery after cryopreservation. Survival rates did not alter after three years of cryopreservation of different Morus species. ISSR markers were used to ascertain the genetic stability of cryopreserved mulberry, which showed no difference detected among the plantlets regenerated from frozen apices in comparison to the non-frozen material.
Jaewoo Shim,Song, I.,Jung, W.-S,Nam, J.,Leem, J. W.,Yu, J. S.,Kim, D. E.,Cho, W. J.,Kim, Y. S.,Jun, D.-H,Heo, J.,Park, W.,Jin-Hong Park,Saraswat, K. C. IEEE 2013 IEEE electron device letters Vol.34 No.1
<P>In this letter, we investigate the electrical behavior of vacancy <I>V</I><SUB>Ge</SUB> defects in Ge at various thermal annealing conditions through electrochemical capacitance-voltage analysis. Then, the effects of the annealing process on Ge n<SUP>+</SUP>/p junction diodes were also studied with <I>J</I>-<I>V</I>, transmission electron microscopy, and secondary ion mass spectroscopy measurements in the aspects of point-defect healing and dopant diffusion/loss phenomena. The <I>V</I><SUB>Ge</SUB> defects tend to heal by recombining with Ge interstitial atoms as the annealing process temperature increases. However, the diffusion/loss problems of P atoms in Ge become severe at above 500<SUP>°</SUP>C. Therefore, an optimal postfabrication annealing process at 600<SUP>°</SUP>C is proposed in terms of point-defect healing and dopant diffusion/loss reduction.</P>