http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Marcela Mireles,,M.A. Quevedo Lopez 한국물리학회 2016 Current Applied Physics Vol.16 No.11
Thin films of titanium/silicon (Ti:Si) are widely employed in the electronics industry because of their metal-like characteristics. The use of films as thin film resistor (TFR) based on Ti:Si has not yet been reported. In this paper, the TFR characteristics of TiSiON with different compositions and deposited in Argon atmosphere with either 1% Oxygen or 1% Oxygen/3% Nitrogen are studied. The film composition was varied through a co-sputtering approach from titanium and silicon targets and the sheet resistance (Rsh) and temperature coefficient of resistance (TCR) were evaluated. The film composition was evaluated by X-ray photoelectron spectroscopy (XPS); carrier mobility, type and concentration by Hall effect methods and film microstructure by X-Ray diffraction. Nitrogen addition during the deposition reduces oxidized species in the TFR and increases film stability. The addition of nitrogen results in TFR films with partially oxidized titanium and silicon and TFR values closer to zero TCR without impacting film resistance. Films deposited without nitrogen result in more unstable films and larger TCR. A near-zero TCR film was found for a Ti:Si ratio of 1.6, exhibiting a Rsh at 25 C of 0.7 kOhms with a TCR value of 171 ppm/C after annealing at 450 C in forming gas.
Band-gap engineering of Cd<sub>1-x</sub>Zn<sub>x</sub>Te films deposited by pulsed laser deposition
Yoo, S.,Avendano, J.,Delmar, L.,Nam, S.,Quevedo-Lopez, M.,Choi, H. Elsevier Sequoia 2016 THIN SOLID FILMS - Vol.612 No.-
We demonstrate enhanced band-gap tunability in Cd<SUB>1-x</SUB>Zn<SUB>x</SUB>Te thin films (x=0, 0.03, 0.06, 0.1, 0.2, or 1) fabricated directly from Cd<SUB>1-x</SUB>Zn<SUB>x</SUB>Te targets using pulsed laser deposition (PLD). All the Cd<SUB>1-x</SUB>Zn<SUB>x</SUB>Te films have uniform thicknesses of ~200nm, crystalline sizes of ~20nm, and are highly oriented in the [111] direction. The annealed Cd<SUB>1-x</SUB>Zn<SUB>x</SUB>Te targets allow better compositional control of the Cd<SUB>1-x</SUB>Zn<SUB>x</SUB>Te films than non-annealed targets. This new process using a single target with high compositional uniformity provides better tunability of the Cd<SUB>1-x</SUB>Zn<SUB>x</SUB>Te film lattice parameter (6.49 to 6.09A) and band gap (1.48 to 2.22eV) by increasing the Zn concentration (x) from 0 to 1.
Lee, S.,Iyore, O.D.,Park, S.,Lee, Y.G.,Jandhyala, S.,Kang, C.G.,Mordi, G.,Kim, Y.,Quevedo-Lopez, M.,Gnade, B.E.,Wallace, R.M.,Lee, B.H.,Kim, J. Pergamon Press ; Elsevier Science Ltd 2014 Carbon Vol.68 No.-
The performance of graphene field effect transistors fabricated on flexible substrates is easily degraded by deformation, delamination and shrinkage during the device fabrication. Multiple thermal annealing on graphene devices could be performed without damages to the flexible substrate using a rigid supporting substrate, poly(dimethylsiloxane) coated Si, holding the flexible substrate during the device fabrication. As a result, a very high performance including electron mobility ~12980 and hole mobility ~9214cm<SUP>2</SUP>/Vs could be achieved. The performance enhancement is attributed to the effective removal of polymer residues using a high temperature vacuum anneal and a reduced interfacial reaction between the graphene and the hydrophobic flexible substrate.