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Ne, Ar, Kr 가스를 사용하여 제작한 스퍼터 Gallium 도프 ZnO 박막의 전기적 특성
송풍근,류봉기,김광호,Song, Pung-Keun,Ryu, Bong-Ki,Kim, Kwang-Ho 한국세라믹학회 2002 한국세라믹학회지 Vol.39 No.10
Ga 첨가된 ZnO(GZO) 박막을 5.7 wt%의 $Ga_2O_3$를 ZnO에 첨가된 세라믹 GZO 타켓을 사용하여 직류 마그넷 스퍼터에 의해 실온의 유리 기판위에 제작했다. 각각 질량이 서로 다른 Ne, Ar, Kr 가스의 다양한 전압(total gas pressure)에서 제작한 GZO 박막에 대하여, 타켓의 에로젼 영역(B영역)과 비에로젼 영역(A영역)에 대향하는 박막 영역의 전기적 특성을 조사했다. 가스 종류와 관계없이 B 영역의 대향부분은 비에로젼 영역과 비교해서, 홀 이동도와 캐리어 밀도의 감소에 의해 상대적으로 높은 비저항값을 보였다. Ne 가스를 사용한 경우, GZO 박막은 가장 높은 비저항값을 나타낸 반면, Kr 가스를 사용하여 제작한 GZO 박막은 상대적으로 가장 낮은 비저항값을 보였다. GZO 박막의 전기적 특성은 박막의 결정성에 크게 의존하고 있음을 알았으며 박막의 전기적 특성과 결정성의 저하를 일으키는 인자로서 성장중의 박막의 결정성에 크게 의존하고 있음을 알았으며 박막의 전기적 특성과 결정성의 저하를 일으키는 인자로서 성장중의 박막표면에 충돌하여 박막에 손상을 입히는 고에너지 입자를 들 수 있다. Ne, Ar, Kr 가스의 반사 중성 원자들의 에너지를 Monete Carlo simulation에 의한 계산한 결과는 실험 결과와 잘 일치함을 알 수 있었다. Gallium-doped ZnO (GZO) films were deposited on soda-lime glass substrate without heating using Ne, Ar, or Kr gas. Electrical properties of GZO films deposited at various total gas pressures were investigated for the film positions corresponding to the erosion region (region B) and outside the erosion region (region A) of the target. Region B showed high resistivity, which was attributed to the decrease in carrier density and Hall mobility, compared to region A. GZO films deposited using Ne gas showed the degradation in resistivity and crystallinity, whereas, GZO films deposited using Kr gas showed the improvement in resistivity and crystallinity. This degradation in film properties could be attributed to the film damage caused by the bombardment of high-energy particles. Especially, the energies of recoiled neutral atoms ($Ne^0,\;Ar^0,\;Kr^0$) calculated by Monte Carlo simulation corresponded to experimental results.
마그네트론 스퍼터링에 의해 제작한 Gallium-doped ZnO 박막에 있어서 잔류 H<sub>2</sub>O 분압의 영향
송풍근,권용준,차재민,이병철,류봉기,김광호,Song, Pung-Keun,Kwon, Young-Jun,Cha, Jae-Min,Lee, Byung-Chul,Ryu, Bong-Ki,Kim, Kwang-Ho 한국세라믹학회 2002 한국세라믹학회지 Vol.39 No.10
Ga을 치환 고용시킨 ZnO(GZO) 박막을 GZO 세라믹 타켓을 사용하여 직류 마그네트론 스퍼터법에 의해 기판온도(RT, 400${\circ}C$), 잔류 $H_2O$ 분압(PH2O; 1.61${\times}10^{-4}∼2.2{\times}10^{-3}$ Pa), $H_2$ 가스 첨가(8.5%), 캐소드의 자장강도(250, 1000G)등의 다양한 조건하에서 제작했다. 기판 가열 없이 100% Ar를 사용한 경우, $P_{H_2O}$가 1.61${\times}10^{-4}$ Pa에서 2.2${\times}10^{-3}$ Pa로 증가 했을 때, 박막의 결정립 크기는 24 nm에서 3 nm로 감소했으며, 비저항은 3.0${\times}10^{-3}$에서 3.1${\times}10^{-2}{\Omega}㎝$ 로 크게 증가함을 보였다. 그러나, 8.5% $H_2$를 Ar 가스에 혼합하여 제막한 결과, GZO 박막의 전기적 특성은 $P_{H_2O}$의 증가에도 불구하고 변화 없이 나타났다. 또한 캐소드의 자장강도를 250G에서 1000G로 증가시킨 경우, GZO 박막의 결정성 및 전기적 특성은 $P_{H_2O}$와 상관없이 크게 향상되었으며, 이것은 플라즈마 임피던스의 감소에 따른 박막 손상의 감소에 기인한다고 생각된다. Gallium doped Zinc Oxide(GZO) films were deposited by dc magnetron sputtering using a GZO ceramic target at various conditions such as substrate temperature (RT, 400), residual water pressure ($P_{H_2O}$; 1.61${\times}10^{-4}∼2.2{\times}10^{-3}$ Pa), introduction of $H_2$ gas (8.5%) and different magnetic field strengths(250, 1000G). GZO films deposited without substrate heating showed clear degradation in film crystallinity and electrical properties with increasing $P_{H_2O}$. The resistivity increased from 3.0${\times}10^{-3}$ to 3.1${\times}10^{-2}{\Omega}㎝$ and the grain size of the films decreased from 24 to 3 nm when PH2O was increased from 1.61${\times}10^{-4}$ to 2.2${\times}10^{-3}$ Pa. However, degradation in electrical properties with increasing $P_{H_2O}$ was not observed for the films deposited with introduction of 8.5% $H_2$. When magnetic field strength of the cathode increased from 250G to 1000G, crystallinity and electrical properties of GZO films improved remarkably about all the $P_{H_2O}$. This result could be attributed to the decrease in film damage caused by the decrease in plasma impedance.
송풍근(Pung-Keun Song) 한국표면공학회 2017 한국표면공학회지 Vol.50 No.2
Transparent Conductive Oxide (TCO), especially Indium Tin Oxide (ITO) films are almost prepared by DC magnetron sputtering because of the advantage of obtaining homogeneous large area coatings with high reproducibility. The purpose of this report is describe a detailed investigation of key factors dominating electrical and structural properties of sputtered ITO films. It was confirmed that crystallinity and electrical properties of ITO films were strongly depend on the sputtering pressure and kinetic energy of sputtered particles which are expected to have a close relation with the transport processes between target and substrate. And also, nodule formation on the ITO target was suppressed by both CaCO₃ addition and decreasing micro-pore in the target. On the other hand, we focused on the characteristics of amorphous TCO film to use as transparent electrode for various applications. To realize high thermoelectric performance, it was tried to control both high electrical conductivity and low thermal conductivity for the amorphous IZO:Sn films.
아연계 인산염 피막용액에서 Fe(NO₃)₂ 농도가 SCM430 합금의 전기화학적 거동에 미치는 영향
권두영(Duyoung Kwon),송풍근(Pung-Keun Song),문성모(Sungmo Moon) 한국표면공학회 2019 한국표면공학회지 Vol.52 No.4
The formation behavior of zinc phosphate conversion coating (ZPCC) on SCM430 alloy was investigated in 25 vol.% of 1M ZnO + 170 ml/L solution containing various Fe(NO₃)₂ concentrations, using open-circuit potential(OCP), electrochemical impedance spectroscopy(EIS), cyclic polarization(CP) curve and tape peel test. OCP of SCM430 alloy and corrosion current density increased with increasing Fe(NO₃)₃ concentration. Resistance of films formed on SCM430 alloy by chemical conversion treatment decreased with increasing Fe(NO₃)₃ concentration. Color and adhesion of chemical conversion coatings became darker and worse, respectively, with increasing Fe(NO₃)₃ concentration. It is concluded that addition of Fe(NO₃)₃ into a zinc phosphating bath leads to faster reaction to form porous surface coatings with poor adhesion and corrosion resistance.
AZ91 마그네슘 합금의 플라즈마 전해산화 피막 형성 및 물성에 미치는 0.1 M NaOH + 0.05 M NaF 용액 중 Na₂SiO₃ 농도의 영향
권두영(Duyoung Kwon),송풍근(Pung-Keun Song),문성모(Sungmo Moon) 한국표면공학회 2020 한국표면공학회지 Vol.53 No.2
Effects of Na₂SiO₃ concentration added into 0.1 M NaOH + 0.05 M NaF solution on the formation behavior and properties of PEO films on AZ91 Mg alloy were investigated under 1200 Hz of alternating current (AC) by voltage-time curves, in-situ observation of arc generation behavior and measurements of film thickness, surface roughness and micro vickers hardness. In the absence of Na₂SiO₃ in the 0.1 M NaOH + 0.05 M NaF solution, about 4 μm thick PEO film was formed within 1 min and then PEO film did not grow but white spots were formed by local burning. Addition of Na₂SiO₃ up to 0.2 M caused more increased formation voltage and growth of PEO film with uniform generation of arcs. Addition of Na₂SiO₃ from 0.2 M to 0.4 M showed nearly the same voltage-time behavior and uniform arc generation. Addition of Na₂SiO₃ more than 0.5 M resulted in a decrease of formation voltage and non-uniform arc generation due to local burning. PEO film growth rate increased with increasing added Na₂SiO₃ concentration but maximum PEO film thickness was limited by local burning if added Na₂SiO₃ concentration is higher than 0.5 M. Surface roughness of PEO film increased with increasing added Na₂SiO₃ concentration and appeared to be proportional to the PEO film thickness. PEO film hardness increased with increasing added Na₂SiO₃ concentration and reached a steadystate value of about 930 HV at more than 0.5 M of added Na₂SiO₃ concentration.
PECVD법에 의해 증착된 Ti-B-C 코팅막 내의 보론함량과 증착온도에 따른 미세구조 및 기계적 물성의 변화
옥정태(Jung Tae Ok),송풍근(Pung Keun Song),김광호(Kwang Ho Kim) 한국표면공학회 2005 한국표면공학회지 Vol.38 No.3
Ternary Ti-B-C coatings were synthesized on WC-Co and Si wafers substrates by a PECVD technique using a gaseous mixture of TiCI₄, BCI₃, CH₄, Ar, and H₂. The effects of deposition variables such as substrate temperature, gas ratio, Rx=[BCI₃/(CH₄+BCI₃)] on the microstructure and mechanical properties of Ti-B-C coatings were investigated. From our instrumental analyses, the synthesized Ti-B-C coatings was confirmed to be composites consisting of nanocrystallites TiC, quasi-amorphous TiB₂, and amorphous carbon at low boron content, on the contrary, nanocrystallites TiB₂, quasi-amorphous TiC, and amorphous carbon at relatively high boron content. The microhardness of the Ti-B-C coatings increased from ~23 ㎬ of TiC to -38 ㎬ of Ti0.33B0.55C0.11 coatings with increasing the boron content. The Ti0.33B0.55C0.11 coatings showed lower average friction coefficient of 0.45, in addition, it showed relatively better wear behavior compared to other binary coatings of TiB₂ and TiC. The microstruture and microhardness value of Ti-B-C coatings were largely depend on the deposition temperature.
권종익,유미영,김서한,송풍근,Kwon, Jong-Ik,You, Mi-Young,Kim, Seo-Han,Song, Pung-Keun 한국표면공학회 2019 한국표면공학회지 Vol.52 No.2
Stability and activity of boron doped diamond (BDD) electrode are key factors for water treatment. In this study, BDD electrodes were prepared on various substrates such as Nb, Si, Ti, and $TiN_x/Ti$ by hot filament chemical vapor deposition (HFCVD) method. BDD/Ti film showed the delamination between BDD and Ti substrate due to the formation of TiC layer caused by diffusion of carbon. On the other hand, $BDD/TiN_x/Ti$ showed remarkably improved stability, compared to BDD/Ti. It was confirmed that $TiN_x$ intermediate layer act as barrier layer for diffusion of carbon. High potential window of 2.8 eV was maintained on the $BDD/TiN_x/Ti$ electrode and, better wastewater treatment capability and longer electrode working life than BDD/Nb, BDD/Si and BDD/Ti were obtained.