Ne, Ar, Kr 가스를 사용하여 제작한 스퍼터 Gallium 도프 ZnO 박막의 전기적 특성

송풍근,류봉기,김광호,Song, Pung-Keun,Ryu, Bong-Ki,Kim, Kwang-Ho 한국세라믹학회 2002 한국세라믹학회지 Vol.39 No.10

Ga 첨가된 ZnO(GZO) 박막을 5.7 wt%의 $Ga_2O_3$를 ZnO에 첨가된 세라믹 GZO 타켓을 사용하여 직류 마그넷 스퍼터에 의해 실온의 유리 기판위에 제작했다. 각각 질량이 서로 다른 Ne, Ar, Kr 가스의 다양한 전압(total gas pressure)에서 제작한 GZO 박막에 대하여, 타켓의 에로젼 영역(B영역)과 비에로젼 영역(A영역)에 대향하는 박막 영역의 전기적 특성을 조사했다. 가스 종류와 관계없이 B 영역의 대향부분은 비에로젼 영역과 비교해서, 홀 이동도와 캐리어 밀도의 감소에 의해 상대적으로 높은 비저항값을 보였다. Ne 가스를 사용한 경우, GZO 박막은 가장 높은 비저항값을 나타낸 반면, Kr 가스를 사용하여 제작한 GZO 박막은 상대적으로 가장 낮은 비저항값을 보였다. GZO 박막의 전기적 특성은 박막의 결정성에 크게 의존하고 있음을 알았으며 박막의 전기적 특성과 결정성의 저하를 일으키는 인자로서 성장중의 박막의 결정성에 크게 의존하고 있음을 알았으며 박막의 전기적 특성과 결정성의 저하를 일으키는 인자로서 성장중의 박막표면에 충돌하여 박막에 손상을 입히는 고에너지 입자를 들 수 있다. Ne, Ar, Kr 가스의 반사 중성 원자들의 에너지를 Monete Carlo simulation에 의한 계산한 결과는 실험 결과와 잘 일치함을 알 수 있었다. Gallium-doped ZnO (GZO) films were deposited on soda-lime glass substrate without heating using Ne, Ar, or Kr gas. Electrical properties of GZO films deposited at various total gas pressures were investigated for the film positions corresponding to the erosion region (region B) and outside the erosion region (region A) of the target. Region B showed high resistivity, which was attributed to the decrease in carrier density and Hall mobility, compared to region A. GZO films deposited using Ne gas showed the degradation in resistivity and crystallinity, whereas, GZO films deposited using Kr gas showed the improvement in resistivity and crystallinity. This degradation in film properties could be attributed to the film damage caused by the bombardment of high-energy particles. Especially, the energies of recoiled neutral atoms ($Ne^0,\;Ar^0,\;Kr^0$) calculated by Monte Carlo simulation corresponded to experimental results.

차세대 TCO 소재

송풍근 한국진공학회 2010 한국진공학회 학술발표회초록집 Vol.39 No.-

투명 전도성 산화물 막 (ITO, GZO, AZO, InSbO₄)의 최근 연구 동향

송풍근 한국표면공학회 2004 한국표면공학회 학술발표회 초록집 Vol.2004 No.-

Characteristic of Ga-Doped ZnO Films Deposited by DC Magnetron Sputtering with a Sintered Ceramic ZnO:Ga Target

송풍근,김양도 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.1

GZO films were deposited using various GZO targets with different Ga2O3 concentrations by DC magnetron sputering. The UV emision intensity remarkably increased for Ga concentrations up to 6.65 wt% Ga2O3, but decreased again with further increases in the Ga2O3 content. Relatively good PL intensity and electrical properties were obtained for the GZO film deposited at a Ga2O3 concentration of 6.65 wt%. The UV emision centered at about 360 nm (3.44 eV) might originate from excitonic recombination coresponding to the near-band-edge emision. On the other hand, blue-grenemision(BGE) intensity monotonously increased with increasing Ga2O3 concentration, which might be atributed to oxygen vacancies. A relatively low resistiviy of 5.1 × 10-4 Ωcm was obtained for the GZO lms deposited at 6.65 wt% of Ga2O3. As a result, increased doping efficiency in GZO films can be said to enhance the UV emision intensity. cm was obtained for the GZO lms deposited at 6.65 wt% of Ga2O3. As a result, increased doping eciency in GZO lms can be said to enhance the UV emision intensity.

반응성 직류 스퍼터법에 의한 질화 인듐 박막의 제막 특성

송풍근,류봉기,김광호 한국세라믹학회 2003 한국세라믹학회지 Vol.40 No.8

In $N_{x}$ films were deposited on soda-lime glass without substrate heating by reactive dc magnetron sputtering using indium (In) metal target. Depositions were carried out under various total gas pressures ( $P_{tot}$) of mixture gases (Ar+$N_2$ or He+$N_2$). He gas was introduced to $N_2$ gas in order to enhance the reactivity of nitrogen on film surface by the "penning ionization". Plasma impedance decreased greatly when 20% or more introduced the $N_2$ gas. This is due to the In $N_{x}$ layers formed on target surface because a secondary electron emission rate of InN is small compared with In metal. XRD patterns of the films revealed that <001> preferred oriented polycrystalline In $N_{x}$ films, where the crystallinity of the films was improved with decrease of $P_{tot}$ and with increase of $N_2$ flow ratio. The improvement of the crystallinity and stoichimetry of the In $N_{x}$ films were considered to be caused by an increase in the activated nitrogen radicals and also by an increase in the kinetic energy of sputtered In atoms arriving at growing film surface, which should enhance the chemical reaction and surface migration on the growing film surface, respectively. Furthermore, the films deposited using mixture gases of He+$N_2$ showed higher crystallinity compared with the film deposited by the mixture gases of Ar+$N_2$.$.EX>.

투명전도성 산화물 박막재료의 연구 동향

송풍근,Song, Pung-Geun 한국전기전자재료학회 2009 전기전자재료 Vol.22 No.1

마그네트론 스퍼터링에 의해 제작한 Gallium-doped ZnO 박막에 있어서 잔류 H₂O 분압의 영향

송풍근,권용준,차재민,이병철,류봉기,김광호,Song, Pung-Keun,Kwon, Young-Jun,Cha, Jae-Min,Lee, Byung-Chul,Ryu, Bong-Ki,Kim, Kwang-Ho 한국세라믹학회 2002 한국세라믹학회지 Vol.39 No.10

Ga을 치환 고용시킨 ZnO(GZO) 박막을 GZO 세라믹 타켓을 사용하여 직류 마그네트론 스퍼터법에 의해 기판온도(RT, 400${\circ}C$), 잔류 $H_2O$ 분압(PH2O; 1.61${\times}10^{-4}∼2.2{\times}10^{-3}$ Pa), $H_2$ 가스 첨가(8.5%), 캐소드의 자장강도(250, 1000G)등의 다양한 조건하에서 제작했다. 기판 가열 없이 100% Ar를 사용한 경우, $P_{H_2O}$가 1.61${\times}10^{-4}$ Pa에서 2.2${\times}10^{-3}$ Pa로 증가 했을 때, 박막의 결정립 크기는 24 nm에서 3 nm로 감소했으며, 비저항은 3.0${\times}10^{-3}$에서 3.1${\times}10^{-2}{\Omega}㎝$ 로 크게 증가함을 보였다. 그러나, 8.5% $H_2$를 Ar 가스에 혼합하여 제막한 결과, GZO 박막의 전기적 특성은 $P_{H_2O}$의 증가에도 불구하고 변화 없이 나타났다. 또한 캐소드의 자장강도를 250G에서 1000G로 증가시킨 경우, GZO 박막의 결정성 및 전기적 특성은 $P_{H_2O}$와 상관없이 크게 향상되었으며, 이것은 플라즈마 임피던스의 감소에 따른 박막 손상의 감소에 기인한다고 생각된다. Gallium doped Zinc Oxide(GZO) films were deposited by dc magnetron sputtering using a GZO ceramic target at various conditions such as substrate temperature (RT, 400), residual water pressure ($P_{H_2O}$; 1.61${\times}10^{-4}∼2.2{\times}10^{-3}$ Pa), introduction of $H_2$ gas (8.5%) and different magnetic field strengths(250, 1000G). GZO films deposited without substrate heating showed clear degradation in film crystallinity and electrical properties with increasing $P_{H_2O}$. The resistivity increased from 3.0${\times}10^{-3}$ to 3.1${\times}10^{-2}{\Omega}㎝$ and the grain size of the films decreased from 24 to 3 nm when PH2O was increased from 1.61${\times}10^{-4}$ to 2.2${\times}10^{-3}$ Pa. However, degradation in electrical properties with increasing $P_{H_2O}$ was not observed for the films deposited with introduction of 8.5% $H_2$. When magnetic field strength of the cathode increased from 250G to 1000G, crystallinity and electrical properties of GZO films improved remarkably about all the $P_{H_2O}$. This result could be attributed to the decrease in film damage caused by the decrease in plasma impedance.

마그네트론 스퍼터링법을 이용한 투명전도성박막(AZO, GZO)의 성막특성

송풍근,김도근,이건환,이승호 한국표면공학회 2006 한국표면공학회 학술발표회 초록집 Vol.2006 No.-

스퍼터 ITO박막의 제조 공정 이해 및 활용

송풍근(Pung-Keun Song) 한국표면공학회 2017 한국표면공학회지 Vol.50 No.2

Transparent Conductive Oxide (TCO), especially Indium Tin Oxide (ITO) films are almost prepared by DC magnetron sputtering because of the advantage of obtaining homogeneous large area coatings with high reproducibility. The purpose of this report is describe a detailed investigation of key factors dominating electrical and structural properties of sputtered ITO films. It was confirmed that crystallinity and electrical properties of ITO films were strongly depend on the sputtering pressure and kinetic energy of sputtered particles which are expected to have a close relation with the transport processes between target and substrate. And also, nodule formation on the ITO target was suppressed by both CaCO₃ addition and decreasing micro-pore in the target. On the other hand, we focused on the characteristics of amorphous TCO film to use as transparent electrode for various applications. To realize high thermoelectric performance, it was tried to control both high electrical conductivity and low thermal conductivity for the amorphous IZO:Sn films.

불용성 양극전극의 전기탈수효율 처리 특성 연구

유미영,송풍근 한국표면공학회 2021 한국표면공학회 학술발표회 초록집 Vol.2021 No.6