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- 저자 : O. Sakata (검색결과 2 건)
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Structural Properties of CrN Buffers for GaN Growth
W. H. Lee,오동철,한창석,이현용,I. H. Im,J. J. Kim,K. Sumitani,구경완,M. W. Cho,O. Sakata,조성준,홍순구,S. T. Kim,T. Minegishi,T. Yao,T.Hanada 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.3
We have investigated the structural properties of CrN layers grown on (0001) Al2O3 substrates by molecular-beam epitaxy. The CrN layers of high-crystal quality are obtained at a low growth temperature of 500 C. X-ray diraction studies indicate that the CrN layers grow along the <111> direction with a cubic structure. In-situ reflection high-energy electron diraction investigations clarify that the CrN layers have the following epitaxy relationship with the Al2O3 substrates: <12- 1> of (111) cubic CrN // <11-20> of (0001) corundum Al2O3 and <101> of (111) cubic CrN // <1-100> of (0001) corundum Al2O3. Based on the above results, the mismatch of the in-plane lattice spacing between the CrN layers and the Al2O3 substrates is evaluated to be around 6.6 %. When the CrN layers are used as the buer layers for GaN growth, the GaN layers grown on the CrN layers show well-resolved excitonic emission lines in the photoluminescence spectra, whereas the GaN layers grown without the CrN layers exhibit a broad near-band-edge emission. It is suggested that CrN buers are eective in relieving the lattice mismatch between Al2O3 substrates and GaN layers.
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T. Minegishi,Z. Vashaei,G. Fujimoto,H. Suzuki,K. Sumitani,M. Cho,M. Suemitsu,O. Sakata,S. Tokairin,T. Yao,Y. Narita 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.3
We studied ZnO growth on 3C-SiC(001)/Si(001) templates. In-situ reflection high- energy electron diffraction (RHEED) observations implied that ZnO grown on 3C-SiC(001) had a critical thickness (50 nm). From a structural characterization by using X-ray diffraction, we revealed that ZnO films thinner than the critical thickness grown on 3C-SiC(001) had a [10-11] orientation with 4-fold in-plane symmetry. On the other hand, ZnO films thicker than the critical thickness consisted of [10-11] and [0001] orientations. Also, the portion of [0001] oriented ZnO increased with the layer thickness. Possible interface configurations of ZnO(10-11)/3C-SiC(001) and ZnO(0001)/ZnO(10-11) are suggested.
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