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Nambin Kim,Woong Jung,Donghoon Shin,Hongwoo Seo,Hyungsang Kim,Hyunsik Im,Kyooho Jung,Soonkoo Kim,Sungchan Kim,Yongmin Kim 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.3
We investigated the (ballistic) current-voltage (I-V ) characteristics in a 100-nm ..-gate AlGaAs/InGaAs Pseudomorphic high-electron-mobility transistor (pHEMT) as a function of temperature for temperatures ranging from 300 K to 10 K and analyzed the transport in terms of carrier backscattering. We observed that the drain current in the linear region dramatically increased below 60 K due to reduced phonon scattering. The critical temperature where the drain current started to rapidly increase shifted to a higher value as the drain voltage was increased. These results are in good agreement with the ballistic transport theory in which low temperatures and high electric fields along the channel lead to enhanced ballistic transport due to a reduction in the backscattering probability. We also carried out self-consistent Schrodinger-Poisson band profile calculations to understand the experimental data.
Characteristics of Ballistic Tansport in Short-Channel MOSFETs
Nambin KIM,Hyungsang KIM,Hyunjung KIM,임현식,Sangsu PARK,Yongmin KIM 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.3
The Si MOSFET is the single most important unit of any digital or analog circuit today. As it is scaled down to the nanometer region, charge carriers (electrons and holes) in the channel are expected to ow with fewer scattering events, leading to ballistic transport. In this work, the characteristics of the quasi-ballistic MOSFET are systematically investigated by taking into account scattering phenomena of the carriers. For a practical viewpoint, a conventional MOSFET structure is exploited. Numerical calculations of potential prole are carried out, in order to understand and quantify the transport as functions of gate and drain voltages under various conditions.
정규호,임현식,Hongwoo Seo,박재완,이전국,MinKyu Yang,Nambin Kim,Yongmin Kim 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.3
We have investigated the electrical transport in a Pt/Cr-doped SZO/SRO thin film, which is one of the candidate materials for a resistive RAM (RRAM), deposited by using pulsed laser deposition (PLD) as a function of temperature. A clear current switching between low-resistance ON and highresistance OFF states is observed. As the temperature is lowered, the ON-to-OFF current ratio is increased. A pulsed voltage with a frequency of 10 Hz 1 kHz is also applied to explore the nonvolatile memory properties, and the transient time is estimated. Stable switching characteristics are observed over the entire range of temperatures and frequencies. Interestingly, the ON-to-OFF current ratio decreases with increasing frequency.