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Turrets Exostosis with Swan Neck Deformity: An Unusual Occurrence
Mruthyunjaya Mruthyunjaya,Supreeth Nekkanti,Sheshagiri Venkateshaiah,Arunodhaya Siddartha,Pramod Thottimane,Tushar Pimpale 대한수부외과학회 2018 대한수부외과학회지 Vol.23 No.4
Turrets exostosis are extremely rare to occur. Benign bony outgrowths from the dorsum of the phalanges following trauma are termed Turrets exostosis. We report an unusual case of Turrets exostosis of the fourth finger with no preced-ing trauma which has never been reported before. A 50-year-old female patient presented to us with a bony swelling on the dorsum of the fourth finger of her right hand in one year. The swelling was dormant initially and started to progress in size since three months leading to pain, restriction of movements and deformity of the finger. Turrets exostosis are very rare to occur. A preceding history of trauma is not necessary for it to occur as described in the literature. Surgical excision yields good results and is indicated when the bony mass causes a progressive deformity of the finger and restriction of movements of the finger.
Sodium alginate and its blends with starch: Thermal and morphological properties
Siddaramaiah,Swamy, T. M. Mruthyunjaya,Ramaraj, B.,Lee, Joong Hee Wiley Subscription Services, Inc., A Wiley Company 2008 Journal of applied polymer science Vol.109 No.6
<P>A series of sodium alginate (SA) and starch blends, namely 100/0, 90/10, 80/20, 70/30, and 60/40, were processed into films by solution casting process and the obtained SA/starch blends have been characterized by differential scanning calorimetry (DSC), thermogravimetric analysis (TGA), fourier transform infrared (FTIR) spectroscopy, and scanning electron microscopy (SEM). DSC analysis shows single glass transition temperature (T<SUB>g</SUB>) up to 30 wt % starch content in the blend, indicating the compatibility and interaction between SA and starch molecules. The TGA reveals the reduction in thermal stability of SA/starch with increase in starch content. FTIR analysis demonstrated the existence of specific intermolecular interactions between carbonyl groups of SA and hydroxyl groups of starch. The morphological analysis by SEM shows the homogeneous distribution of starch in the SA matrix. © 2008 Wiley Periodicals, Inc. J Appl Polym Sci, 2008</P>
Nagashekhara, Molugulu,Murthy, Vasudeva,Mruthyunjaya, Anil Tumkur,Ann, Lim Li Asian Pacific Journal of Cancer Prevention 2015 Asian Pacific journal of cancer prevention Vol.16 No.15
Usage of traditional, complementary and alternative medicine (TCAM) has gained popularity over the past few years. However, very little is known about TCAM use among Malaysian cancer patients. This study aimed to identify the determinants of TCAM usage among cancer patients with determination of relationships between demographic factors, patient satisfaction with conventional treatment, knowledge on TCAM and healthcare professional influence. Patient's perceptions towards TCAM were also determined. A simple random convenient sampling method was used to recruit 354 patients from Hospital Kuala Lumpur between February to April 2013. All were directly interviewed with a structured questionnaire. In this study, 172 respondents were TCAM users. There was no significant differences between demographic background of respondents in the usage of TCAM. Minimal correlation was found between patient satisfaction with the conventional treatment and usage of TCAM (r=0.091). A poor correlation was found between healthcare professional's influence and TCAM usage (r=-0.213) but the results suggested that increase in influence would decrease TCAM usage. Patient TCAM knowledge correlated negatively with the TCAM usage (r=-0.555) indicated that cancer patients are less likely to use TCAM when they have more TCAM knowledge. Healthcare professionals should be fully equipped with the necessary TCAM knowledge while maintaining patient satisfaction with the conventional treatment. They should also intervene on patient TCAM usage where a potential drug interaction or a harmful adverse event can occur.
Billah, Mohammad Masum,Delwar Hossain Chowdhury, Md,Mativenga, Mallory,Jae Gwang Um,Mruthyunjaya, Ravi K.,Heiler, Gregory N.,Tredwell, Timothy John,Jin Jang IEEE 2016 IEEE electron device letters Vol.37 No.6
<P>We report the numerical simulation of the effect of a dual gate (DG) TFT structure operating under dual gate driving on improving negative bias illumination stress (NBIS) of amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). With respect to the transfer characteristics of a-IGZO TFTs, we show a larger negative threshold voltage shift (ΔVTH) with increasing a-IGZO active layer thickness. This trend is confirmed by TCAD simulation, where the initial transfer curve is plotted under varying a-IGZO thickness keeping a constant density of states. Under varying a-IGZO thickness, TCAD simulation results confirm TFTs under DG driving shows significantly less ΔVTH shift under NBIS compared with that of single gate (SG) driving TFTs. Under 10 K seconds of NBIS, TCAD simulation results show the increase in donor-like states (NGD) by 5.25 × 10<SUP>17</SUP> cm<SUP>-3</SUP> eV<SUP>-1</SUP> and acceptor-like states (NGA) by 7.5 × 10<SUP>16</SUP> cm<SUP>-3</SUP> eV<SUP>-1</SUP>.</P>
Mativenga, Mallory,Sungjin An,Suhui Lee,Jaegwang Um,Di Geng,Mruthyunjaya, Ravi K.,Heiler, Gregory N.,Tredwell, Timothy J.,Jin Jang IEEE 2014 IEEE transactions on electron devices Vol.61 No.6
<P>Intrinsic mobility and intrinsic channel resistance (R<SUB>CH</SUB>) of amorphous, In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) with varying channel length (L) are investigated using a gated four-probe back-channel-etched TFT design. The intrinsic R<SUB>CH</SUB> is found to decrease from ~500 to ~250 kΩ per unit area by increasing V<SUB>GS</SUB> from 10 to 20 V. The intrinsic mobility is ~17 cm<SUP>2</SUP>/V·s, which is about 20% higher than that derived from the normal two-point probe measurements. Source and drain parasitic resistance (R<SUB>PAR</SUB>) of the a-IGZO TFTs is found to be of the same order of magnitude as the R<SUB>CH</SUB>-which is different from hydrogenated amorphous-silicon (a-Si:H) TFTs, where TFT operation is dominated by R<SUB>PAR</SUB>.</P>
Mativenga, Mallory,Su Hwa Ha,Di Geng,Dong Han Kang,Mruthyunjaya, Ravi K.,Heiler, Gregory N.,Tredwell, Timothy J.,Jin Jang IEEE 2014 IEEE transactions on electron devices Vol.61 No.9
<P>We report a low-voltage-driven amorphous indium-gallium-zinc oxide (a-IGZO) semiconductor-based Corbino (circular) thin-film transistor (TFT) with infinite output resistance beyond pinchoff. The Corbino TFT has inner and outer concentric ring electrodes, and when the latter is the drain, channel width (W) decreases with channel length (L), such that the W/L ratio is not changed after pinchoff. As demonstrated herein, this a-IGZO Corbino TFT is, therefore, a good candidate for uniform current drivers in applications, such as active-matrix organic light-emitting diode display pixels, where it would maintain the same drive (diode) currents, even with variations in supply voltage (V<SUB>DD</SUB>).</P>
Chowdhury, Md Delwar Hossain,Mativenga, Mallory,Jae Gwang Um,Mruthyunjaya, Ravi K.,Heiler, Gregory N.,Tredwell, Timothy John,Jin Jang Institute of Electrical and Electronics Engineers 2015 IEEE transactions on electron devices Vol. No.
<P>We studied the environmental stability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with single-layer (SiO<SUB>2</SUB>) and bilayer (SiO<SUB>2</SUB>/SiN<SUB>x</SUB>) passivation under high-humidity (80%) storage. During the 30 days of investigation, all single-layer passivated TFTs showed negative turn-ON voltage shifts (AVON), the size of which increased with storing time. The negative A VON is attributed to donor generation inside the active a-IGZO caused by the diffusion of ambient hydrogen/water molecules passing through the SiO<SUB>2</SUB> passivation layer. The X-ray photoelectron spectroscopy depth profile for the SiO<SUB>2</SUB> passivated structures confirms that the concentration of oxygen vacancies, which is initially larger at the a-IGZO/SiO<SUB>2</SUB> interface, compared with the bulk a-IGZO, decreases after 30 days of storage under high humidity. This can be explained as the passivation of oxygen vacancies by diffused hydrogen. On the other hand, all bilayer passivated TFTs showed good air stability at room temperature and high humidity (80%).</P>