http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Characterization and Modeling of a-IGZO TFTs
Migliorato, Piero,Chowdhury, Md Delwar Hossain,Jae Gwang Um,Manju Seok,Martivenga, Mallory,Jin Jang IEEE 2015 Journal of display technology Vol.11 No.6
<P>In this paper, we present a systematic approach to the characterization and modeling of amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistors (TFTs), where the key parameters are determined from the analysis of both I- V and C- V characteristics, in a step-by-step fashion, without complex interdependences that may affect the accuracy of the results. Flat band voltage VFB and carrier concentration nFB are extracted by a method we have previously developed, validated here by applying it to simulated data. Next, the density of deep gap states is extracted, followed by the determination, by a new method, of the shallow donor concentration. The tail states parameters are determined last, by matching the calculated nFB to the experimental one. Simulations are then performed without any adjustable parameters. The approach is applied to the study of device to device variations, indicating that the material is strongly compensated. As for the analysis of Negative Bias under Illumination Stress (NBIS), this work confirms that the effect is due to creation of a double donor, with a shallow level close to the conduction band (positive correlation energy). Oxygen vacancies are the likely candidates. These defects are not detected in unstressed devices, where the characteristics can be accurately simulated by incorporating donors with a single shallow level.</P>
Biologically Sensitive Field-Effect Devices using Polysilicon TFTs
Piero Migliorato,Pedro Estrela,Andrew G. Stewart,Simon D. Keighley 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.I
This paper presents a review of recent developments in the detection of biomolecular interactions with field-effect devices. Ion-sensitive field-effect transistors (ISFETs) and enzyme field-effect transistors (EnFETs), based on polycrystalline silicon (poly-Si) TFTs, are discussed. Label-free electrical detection of DNA hybridization has been achieved by a new method, by using MOS capacitors or poly-Si TFTs. The method can in principle be extended to other chemical or biochemical systems, such as proteins and cells.o
Polysilicon Thin Film Transistor Modelling: High Field Effects and Terminal Capacitances
Quinn, M.,Migliorato, P.,Tam, S.,Reita, C. 대한전자공학회 1993 ICVC : International Conference on VLSI and CAD Vol.3 No.1
The differences in behaviour between polysilicon and crystalline silicon field effect transistors make it impossible to use standard circuit simulators as design cools. Four terminal crystalline models cannot accurately describe the operation of polysilicon transistors which are .real three terminal devices, with no body or back gate present. For this reason the conventional MOSFET model is unable to cape with effects such as those caused by floating substrates. Furthermore due to the differing physical mechanisms dominating in these devices, effects considered second order in the treatment of crystalline MOSFETs, such as sub-threshold conduction, channel length modulation arid various field induced generation mechanisms play an important role in the electrical characteristics of polysilicon devices. Therefore a new approach is required when dealing with polysilicon Thin Film Transistors (TFTs).
Um, Jae Gwang,Mativenga, Mallory,Migliorato, Piero,Jang, Jin American Institute of Physics 2014 JOURNAL OF APPLIED PHYSICS - Vol.115 No.13
<P>We report on the generation and characterization of a hump in the transfer characteristics of amorphous indium gallium zinc-oxide thin-film transistors by positive bias temperature stress. The hump depends strongly on the gate bias stress at 100 degrees C. Due to the hump, the positive shift of the transfer characteristic in deep depletion is always smaller that in accumulation. Since, the latter shift is twice the former, with very good correlation, we conclude that the effect is due to creation of a double acceptor, likely to be a cation vacancy. Our results indicate that these defects are located near the gate insulator/active layer interface, rather than in the bulk. Migration of donor defects from the interface towards the bulk may also occur under PBST at 100 degrees C. (C) 2014 AIP Publishing LLC.</P>
Label-Free Electrical Biosensor Arrays: A New Challenge for TFT Technology
Pedro Estrela,Peng Li,Simon D. Keighley,Piero Migliorato 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.54 No.1
Biotechnology is in great need of low-cost intelligent biochips capable of massive parallel detection to be used in portable instrumentation. One way this may be achieved is to exploit mature semiconductor technologies for the development of biosensor arrays. We review here two highly promising techniques for label-free electrical detection of biomolecular interactions: potentiometric and electrochemical impedance spectroscopy. Thin film transistor technology can play an important role in the development of these techniques in biosensor microarrays.