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Effect of thickness on the microstructure and soft magnetic properties of CoFeHfO thin films
Luu Van Tho,이광은,김철기,김종오 한국물리학회 2008 Current Applied Physics Vol.8 No.6
The thickness effects on the microstructure and soft magnetic properties of CoFeHfO thin films have been investigated in the range of 100–600 nm. There was a significant change in the coercivity (Hc) and the anisotropy (Hk) value with increasing film thickness, but the saturation induction and the resistivity almost remain unchanged. Hc and Hk reached a minimum value of 0.19 Oe and a maximum value of 50 Oe, respectively at 200 nm film thickness. The high saturation magnetic induction is 21 kG and resistivity is 500μΩ cm. The origin of the changing Hc and Hk values is discussed in detail based on change of microstructure along with film thickness. The thickness effects on the microstructure and soft magnetic properties of CoFeHfO thin films have been investigated in the range of 100–600 nm. There was a significant change in the coercivity (Hc) and the anisotropy (Hk) value with increasing film thickness, but the saturation induction and the resistivity almost remain unchanged. Hc and Hk reached a minimum value of 0.19 Oe and a maximum value of 50 Oe, respectively at 200 nm film thickness. The high saturation magnetic induction is 21 kG and resistivity is 500μΩ cm. The origin of the changing Hc and Hk values is discussed in detail based on change of microstructure along with film thickness.
Organic nano-floating-gate transistor memory with metal nanoparticles
Van Tho Luu,Baeg Kang-Jun,Noh Yong-Young 나노기술연구협의회 2016 Nano Convergence Vol.3 No.10
Organic non-volatile memory is advanced topics for various soft electronics applications as lightweight, low-cost, flexible, and printable solid-state data storage media. As a key building block, organic field-effect transistors (OFETs) with a nano-floating gate are widely used and promising structures to store digital information stably in a memory cell. Different types of nano-floating-gates and their various synthesis methods have been developed and applied to fabricate nanoparticle-based non-volatile memory devices. In this review, recent advances in the classes of nano-floating-gate OFET memory devices using metal nanoparticles as charge-trapping sites are briefly reviewed. Details of device fabrication, characterization, and operation mechanisms are reported based on recent research activities reported in the literature.