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Wnt pathway is involved in 5-FU drug resistance of colorectal cancer cells
Lingfeng He,Hong Zhu,Shiying Zhou,Ting Wu,Huan Wu,Huan Yang,Huiwen Mao,Chandra SekharKathera,Avilala Janardhan,Ashlin M. Edick,Anna Zhang,Zhigang Hu,Feiyan Pan,Zhigang Guo 생화학분자생물학회 2018 Experimental and molecular medicine Vol.50 No.-
Colorectal cancer (CRC) is one of the leading causes of cancer-related death worldwide. 5-Fluorouracil (5-FU) is widely used in the treatment of cancers, but its antineoplastic activity is limited in drug-resistant cancer cells. To investigate the detailed mechanism of 5-FU resistance, we developed a model of 5-FU-resistant cells from HCT-8 cells, a wellestablished colorectal cancer cell line. We found that the drug-resistant cells demonstrated high expression of TCF4 and β-catenin, indicating an upregulated Wnt pathway. A microarray analysis revealed that the suppression of the checkpoint kinase 1 (CHK1) pathway explained the resistance to 5-FU, especially in p53 wild-type cancer cells such as HCT-8. Our data also demonstrated that the CHK1 pathway is suppressed by the Wnt pathway in 5-FU-resistant cells. In summary, we have discovered a novel mechanism for 5-FU resistance mediated by histone deacetylation, which also revealed the crosstalk between the Wnt pathway and CHK1 pathway.
An investigation on the dynamics of domain switching of Bi0.5Na0.5TiO3-based ferroelectric ceramics
Zhipeng Gao,Hang Zhang,Yi Liu,Lingfeng Wu,Jia Yang,Tao Zhang,Haiyan Wang,Xuefeng Chen,Genshui Wang,Hongliang He 한국물리학회 2017 Current Applied Physics Vol.17 No.4
The dynamics of domain switching of Bi0.5Na0.5TiO3-based ferroelectric ceramic was investigated. With the electric field increasing, the domain switch experienced three sections of no domain switch region, creep region and flow region. In the creep region, the domain switch is dominated by the thermally activated domain wall movement. In flow region, the domain wall experience the viscous flow motion. For the BNT-BA-Zn ceramic, the activation energy of creep domain switch is much higher than it in flow region. With temperature increasing, the sensitivity of domain wall motion to the frequency is decreasing. This result demonstrated the domain switch of different ferroelectric materials could be quantitatively analyzed and compared based on the simple polarization - current - electric field data.