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Removal Effciency of Organic Contaminants Using ECR H2 Plasma And ECR O2 Plasma
Kyunsuk Choi,이종무 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.III
In this communication, we report our experimental results on the removal of the organic contaminants existing on the surface of silicon wafers by a dry cleaning method using ECR plasma. After cleaning, Si wafers were characterized by Attenuated Total Re ection-Fourier Transform Infrared Spectroscopy (ATR-FTIR) and Atomic Force Microscropy (AFM). In ECR hydrogen plasma cleaning, the RMS surface roughness reduced signicantly with increasing the exposure time but the removal of organic contaminants from the silicon wafer was not very eective. In ECR oxygen plasma cleaning, the plasma exposure times to reach both the detection limit and the lowest RMS roughness were 40 and 10 sec, respectively and the optimum plasma exposure time is suggested to be 30 40 sec, considering both the eects of cleaning and surface roughening. Therefore, dry cleaning using ECR oxygen plasma seems to be more eective than that using ECR hydrogen plasma for the removal of organic contaminants.
최균석(Kyunsuk Choi),김주욱(Joo-Uk Kim),이기원(Kiwon Lee),서경주(Kyoung-Ju Seo),박영(Young Park) 대한전기학회 2020 전기학회논문지 Vol.69 No.10
Recently, smart manufacturing technology research is being conducted in various fields, using digital parts-based technologies. Components that are used for electrification in electric railways are manufactured using casting techniques. This is because the mechanical and electrical properties required to ensure safety considerably vary, and the standards defined for errors are strict. To apply digital parts-based manufacturing technology to parts for electrification, the design of existing parts must be 3D-modelled, and research must be conducted on manufacturing techniques using metals. In this study, we investigated digital laminate manufacturing technology for smart manufacturing of parts for electrification. The clevis-type terminal clamp of the contact wire was manufactured using stereolithography apparatus. The deviation, which was measured using a 3D hybrid scanner and a 3D coordinate measuring device, was observed to be approximately ± 500 μm. The model illustrated in this paper will be used as a reference to study metal train parts in the future. In addition, it is expected to be used as a pre-modelling development technology for manufacturing singular-shaped parts.
UV/O_3와 ECR 플라즈마를 이용한 wafer storage box로부터 발생하는 Si 웨이퍼 표면 위의 유기오염물 제거
崔均碩,林鍾旻,李鍾武,羅寬球,朴相俊 대한금속재료학회 2002 대한금속·재료학회지 Vol.40 No.7
The problem of organic contamination is still there due to the outgassing from the plastic materials in the storage boxes. Such organic contaminants have deleterious effects not only on the gate oxide integrity, but also on the chemical vapor deposition steps. In this paper, we report the experimental results for the removal of the organic contaminants existing on wafer surfaces by UV/O_3 cleaning, ECR H_2 plasma and ECR O_2 plasma cleaning. After cleaning, Si wafers were analyzed by Attenuated Total Reflection Fourier Transform Infrared Spectroscopy (ATR-FTIR) and Atomic Force Microscrope(AFM). The ECR oxygen plasma cleaning technique seems to be more effective than the ECR hydrogen plasma or the UV/O_3 cleaning technique for the removal of organic contaminants. Also, organic contaminants removal mechanisms of UV/O_3 cleaning, ECR H_2 plasma and ECR O_2 plasma cleaning are discussed.