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Serpentine Microstrip Lines With Zero Far-End Crosstalk for Parallel High-Speed DRAM Interfaces
Kyoungho Lee,Hae-Kang Jung,Hyung-Joon Chi,Hye-Jung Kwon,Jae-Yoon Sim,Hong-June Park IEEE 2010 IEEE TRANSACTIONS ON ADVANCED PACKAGING Vol.33 No.2
<P>Serpentine microstrip lines are proposed to eliminate the far-end crosstalk in parallel high-speed interfaces by increasing the capacitive coupling ratio to equal the inductive coupling ratio. Zero far-end crosstalk voltage waveform and zero crosstalk-induced jitter (CIJ) were achieved on an FR4 printed circuit board, by adjusting the unit section length of the serpentine structure. Application of the proposed serpentine microstrip lines to the 2-drop stub series terminated logic DRAM channel increased the maximum data rate from 0.9 to 1.4 Gb/s and reduced CIJ by ~ 78 ps at 3.3 Gb/s.</P>
Kyoungho Lee,Hyun-Bae Lee,Hae-Kang Jung,Jae-Yoon Sim,Hong-June Park IEEE 2008 IEEE TRANSACTIONS ON ADVANCED PACKAGING Vol.31 No.4
<P>A serpentine guard trace is proposed to reduce the peak far-end crosstalk voltage and the crosstalk induced timing jitter of parallel microstrip lines on printed circuit boards. The vertical sections of the serpentine guard increase the mutual capacitance without much changing the mutual inductance between the aggressor and victim lines. This reduces the difference between the capacitive and inductive couplings and hence the far-end crosstalk. Comparison with the no guard, the conventional guard, and the via-stitch guard shows that the serpentine guard gives the smallest values in both the peak far-end crosstalk voltage and the timing jitter. The time domain reflectometer (TDR) measurement shows that the peak far-end crosstalk voltage of serpentine guard is reduced to 44% of that of no guard. The eye diagram measurement of pseudo random binary sequence (PRBS) data shows that the timing jitter is also reduced to 40% of that of no guard.</P>
Hae-Kang Jung,Kyoungho Lee,Jong-Sam Kim,Jae-Jin Lee,Jae-Yoon Sim,Hong-June Park IEEE 2009 IEEE journal of solid-state circuits Vol.44 No.11
<P>By using the data timing control at the transmitter (TX), the crosstalk-induced jitter (CIJ) is compensated for in the 3-bit parallel data transmission through the coupled microstrip lines on printed circuit board (PCB). The difference in propagation velocity with the signal modes (odd, static, even) is compensated for by sending data earlier or later at TX according to the signal modes, so that the signals of different modes arrive at receiver at the same time. The proposed TX was implemented by using a 0.18 mum CMOS process. The measurement shows that the proposed TX reduces the RX jitters by about 30 ps (more than 50% of the added jitter due to CIJ and ISI) at the data rates from 2.6 Gb/s to 4.0 Gb/s. The proposed scheme can be applied to more than three parallel microstrip lines.</P>
양지훈,Kang Donggu,An SangHyun,Ryu Jeong Yeop,Lee KyoungHo,Kim Jun Sik,Song Moon-Yong,Kim Young-Sik,Kwon Sang-Mo,Jung Won-Kyo,Jeong Woonhyeok,Jeon Hojun 한국생체재료학회 2023 생체재료학회지 Vol.27 No.00
Until recent, there are no ideal small diameter vascular grafts available on the market. Most of the commercialized vascular grafts are used for medium to large-sized blood vessels. As a solution, vascular tissue engineering has been introduced and shown promising outcomes. Despite these optimistic results, there are limitations to commercialization. This review will cover the need for extrusion-based 3D cell-printing technique capable of mimicking the natural structure of the blood vessel. First, we will highlight the physiological structure of the blood vessel as well as the requirements for an ideal vascular graft. Then, the essential factors of 3D cell-printing including bioink, and cell-printing system will be discussed. Afterwards, we will mention their applications in the fabrication of tissue engineered vascular grafts. Finally, conclusions and future perspectives will be discussed.
Myunghun Kang,Youngmin Kim,Gueesoo Cha,Kyoungho Paik,Heejoon Lee IEEE 2012 IEEE transactions on applied superconductivity Vol.22 No.3
<P>In a High Temperature Superconducting (HTS) magnet consisting of pancake windings, HTS tape with the same width has been used for all pancake windings. If a wider HTS tape is used for the outer pancake windings, the critical current of the HTS magnet can be increased. This paper shows the properties of BSCCO magnets in which the outer pancake windings are wound with a wider HTS tape. In order to examine the effects of a wider HTS tape, a HTS magnet with an inner radius of 20 mm and a height of 202.4 mm was used. The number of turns of each pancake winding was 150, and the number of pancake windings was 46. The critical current of the pancake winding was determined by using E-J relation. Results of calculation show that the critical current was higher in the HTS magnet with a wider HTS tape at the outer pancake windings than in the HTS magnet with the same width of HTS tape for all pancake windings.</P>
Critical Current of the HTS Winding Wound With 12 mm YBCO HTS Tape
Myunghun Kang,Kyoungho Paik,Gueesoo Cha,Kyungwoo Ryu IEEE 2013 IEEE transactions on applied superconductivity Vol.23 No.3
<P>Wide 12-mm high-temperature superconducting (HTS) tapes are being used for HTS windings. The critical current of an HTS winding with a 12-mm HTS tape is calculated in this paper, with consideration of the nonuniform current distribution at the cross-section of the HTS tape. To calculate the nonuniform current distribution, the cross-section of the HTS tape is divided into small elements. The current at each element is calculated by using the <I>I</I><SUB>c</SUB> - <I>B</I> relation and <I>n</I>-value, which are measured in this paper. A pancake winding wound with a 12-mm YBCO tape is constructed and tested to confirm the validity of the proposed calculation method. The minimum critical current of the 12-mm YBCO tape is 240 A, and the number of turns of the pancake winding is 100 turns. The results of test indicate the need to consider the nonuniform current distribution in the calculation of the critical current of a pancake winding using the 12-mm HTS tape. Unlike the 4-mm HTS tape, the 12-mm HTS tape shows that the current is limited at the innermost turn of the pancake winding.</P>
강민성(Minsung Kang),문경보(Kyoungho Moon),김도현(Dohyeun Kim) 한국멀티미디어학회 2007 한국멀티미디어학회 학술발표논문집 Vol.2007 No.1
최근 비접촉식 인식 기술인 RFID(Radio Frequency IDentification)에 대한 표준화가 EPCglobal과 ISO/IEC/JTC1/SC31을 중심으로 진행 되고 있다. 본 논문에서는 EPCglobal의 EPCIS (Information Service) 표준 규격을 참조하여 EPC(Electronic Product Code) 데이터를 실시간적으로 분산처리하고 효율적으로 응용 서비스와 연동하는 RFID 서비스 미들웨어를 절계하고 구현한다. 이를 위하여 EPC 데이터를 이벤트 별로 분류하여 다수의 데이터베이스에 나누어 저장하고, 실시간 EPC 데이터 처리를 하기 위한 비동기식 큐와 중복 데이터 제거, 데이터 필터링, 데이터 분류 기능을 설계하고 구현한다.
디스크 암호화 키의 효율적인 탐색을 위한 커널 메모리 수집 방법
강영복(Youngbok Kang),황현욱(Hyunuk Hwang),김기범(Kibom Kim),이경호(Kyoungho Lee),김민수(Minsu Kim),노봉남(Bongnam Noh) 한국정보보호학회 2013 정보보호학회논문지 Vol.23 No.5
디스크 암호화 소프트웨어로 데이터를 암호화 하는 경우 패스워드를 획득하기 전까지 암호화 데이터의 원본 데이터를 추출하기 위해서는 많은 어려움이 있다. 이러한 디스크 암호화 소프트웨어의 암호화 키는 물리 메모리 분석을 이용하여 암호화 키를 추출할 수 있다. 물리 메모리에서 암호화 키 탐색을 수행하는 경우 일반적으로 메모리 전체를 대상으로 탐색을 수행하기 때문에 메모리 크기에 비례하여 많은 시간이 요구된다. 하지만 물리 메모리 데이터에는 시스템 커널 오브젝트, 파일 데이터와 같이 암호화 키와 관련이 없는 많은 데이터가 포함되어 있음으로, 이를 분석하여 키 탐색에 필요한 유효한 데이터를 추출하는 방법이 요구된다. 본 논문에서는 윈도우즈 커널 가상 주소 공간 분석을 통해 물리 메모리에서 디스크 암호화 키가 저장되는 메모리 영역만 수집하는 효율적인 방법을 제시하고자 한다. 실험을 통해 제안된 방법이 기존 방법보다 암호화 키 탐색 공간을 효율적으로 줄임으로써 우수함을 증명한다. It is hard to extract original data from encrypted data before getting the password in encrypted data with disk encryption software. This encryption key of disk encryption software can be extract by using physical memory analysis. Searching encryption key time in the physical memory increases with the size of memory because it is intended for whole memory. But physical memory data includes a lot of data that is unrelated to encryption keys like system kernel objects and file data. Therefore, it needs the method that extracts valid data for searching keys by analysis. We provide a method that collect only saved memory parts of disk encrypting keys in physical memory by analyzing Windows kernel virtual address space. We demonstrate superiority because the suggested method experimentally reduces more of the encryption key searching space than the existing method.
Germanium p-i-n avalanche photodetector fabricated by point defect healing process.
Shim, Jaewoo,Kang, Dong-Ho,Yoo, Gwangwe,Hong, Seong-Taek,Jung, Woo-Shik,Kuh, Bong Jin,Lee, Beomsuk,Shin, Dongjae,Ha, Kyoungho,Kim, Gwang Sik,Yu, Hyun-Yong,Baek, Jungwoo,Park, Jin-Hong Optical Society of America 2014 Optics letters Vol.39 No.14
<P>In this Letter, we report Ge p-i-n avalanche photodetectors (APD) with low dark current (sub 1 μA below V(R)=5??V), low operating voltage (avalanche breakdown voltage=8-13??V), and high multiplication gain (440-680) by exploiting a point defect healing method (between 600C and 650C) and optimizing the doping concentration of the intrinsic region (p-type ~101? cm?3). In addition, Raman spectroscopy and electrochemical capacitance voltage analyses were performed to investigate the junction interfaces in more detail. This successful demonstration of Ge p-i-n APD with low dark current, low operating voltage, and high gain is promising for low-power and high-sensitivity Ge PD applications.</P>